DSK BY255 Plastic silicon rectifier Datasheet

Diode Semiconductor Korea
BY251(Z) - - - BY255(Z)
VOLTAGE RANGE: 200 --- 1300 V
CURRENT: 3.0 A
PLASTIC SILICON RECTIFIERS
FEATURES
Low cost
Diffused junction
DO - 27
Low leakage
Low forward voltage drop
High current capability
Easily cleaned witn Freon,Alcohol,lsopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Dimensions in millimeters
Polarity: Color band denotes cathode
Weight: 0.041 ounces, 1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BY
251
BY
252
BY
253
BY
254
BY
255
UNITS
Maximum recurrent peak reverse voltage
VRRM
200
400
600
800
1300
V
Maximum RMS voltage
VRMS
140
280
420
560
910
V
Maximum DC blocking voltage
VDC
200
400
600
800
1300
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA =75
IF(AV)
3.0
A
IFSM
100.0
A
VF
1.1
V
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 3.0 A
Maximum reverse current
at rated DC blocking voltage
@TA =25
@TA=100
IR
10.0
Typical junction capacitance
(Note1)
CJ
35
Typical thermal resistance
(Note2)
RθJA
20
TJ
- 55 ---- + 150
TSTG
- 55 ---- + 150
Operating junction temperature range
Storage temperature range
A
100.0
pF
/W
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
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Diode Semiconductor Korea
BY251(Z)- - -BY255(Z)
10
4
2
1.0
0.4
0.2
0.1
0.06
0.04
T J =25
P ulse W idth=3 00uS
0.02
0.01
0.6
0.8
1.0
1.2
1.4
1.6
FIG.2 -- TYPICAL CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
100
AMPERES
INSTANTANEOUS FORWARD CURRENT,
FIG.1 -- TYPICAL FORWARD CHARACTERISTICS
FORWARD VOLTAGE, VOLTS
4
3
2
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
1
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE,
FIG.3 -- MAXIMUM NON-REPETITIVE FORWARD
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
TJ=125℃
8.3ms Single Half
Sine-Wave
0
1
2
4
8 10
20
40 60 80 100
NUMBER OF CYCLES AT 60Hz
JUNCTION CAPACITANCE,pF
10 0
AMPERES
PEAK FORWARD SURGE CURRENT
SURGE CURRENT
100
60
f=1MHz
TJ=25
40
20
10
4
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
REVERSE VOLTAGE, VOLTS
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Diode Semiconductor Korea
BY251(Z) - - - BY255(Z)
REVERSE LEAKAGE CURRENT, MICRO AMPERES
FIG.5 -- TYPICAL REVERSE CHARACTERISTICS
100
10
0
TJ=125 C
1.0
0
TJ=125 C
0.1
.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERASE VOLTAGE, %
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