Diode Semiconductor Korea BY251(Z) - - - BY255(Z) VOLTAGE RANGE: 200 --- 1300 V CURRENT: 3.0 A PLASTIC SILICON RECTIFIERS FEATURES Low cost Diffused junction DO - 27 Low leakage Low forward voltage drop High current capability Easily cleaned witn Freon,Alcohol,lsopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Dimensions in millimeters Polarity: Color band denotes cathode Weight: 0.041 ounces, 1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BY 251 BY 252 BY 253 BY 254 BY 255 UNITS Maximum recurrent peak reverse voltage VRRM 200 400 600 800 1300 V Maximum RMS voltage VRMS 140 280 420 560 910 V Maximum DC blocking voltage VDC 200 400 600 800 1300 V Maximum average forw ard rectified current 9.5mm lead length, @TA =75 IF(AV) 3.0 A IFSM 100.0 A VF 1.1 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 3.0 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA=100 IR 10.0 Typical junction capacitance (Note1) CJ 35 Typical thermal resistance (Note2) RθJA 20 TJ - 55 ---- + 150 TSTG - 55 ---- + 150 Operating junction temperature range Storage temperature range A 100.0 pF /W NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 2. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea BY251(Z)- - -BY255(Z) 10 4 2 1.0 0.4 0.2 0.1 0.06 0.04 T J =25 P ulse W idth=3 00uS 0.02 0.01 0.6 0.8 1.0 1.2 1.4 1.6 FIG.2 -- TYPICAL CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES 100 AMPERES INSTANTANEOUS FORWARD CURRENT, FIG.1 -- TYPICAL FORWARD CHARACTERISTICS FORWARD VOLTAGE, VOLTS 4 3 2 Single Phase Half Wave 60HZ Resistive or Inductive Load 1 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE, FIG.3 -- MAXIMUM NON-REPETITIVE FORWARD FIG.4 -- TYPICAL JUNCTION CAPACITANCE TJ=125℃ 8.3ms Single Half Sine-Wave 0 1 2 4 8 10 20 40 60 80 100 NUMBER OF CYCLES AT 60Hz JUNCTION CAPACITANCE,pF 10 0 AMPERES PEAK FORWARD SURGE CURRENT SURGE CURRENT 100 60 f=1MHz TJ=25 40 20 10 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, VOLTS www.diode.kr Diode Semiconductor Korea BY251(Z) - - - BY255(Z) REVERSE LEAKAGE CURRENT, MICRO AMPERES FIG.5 -- TYPICAL REVERSE CHARACTERISTICS 100 10 0 TJ=125 C 1.0 0 TJ=125 C 0.1 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERASE VOLTAGE, % www.diode.kr