High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS(on) N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 750 mA IDM TC = 25°C, pulse width limited by TJM 3 A 1.0 A = 1000 V = 750 mA = 17 Ω Maximum Ratings TO-220AB (IXTP) IAR EAR TC = 25°C 5 mJ EAS TC = 25°C 100 mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 47 Ω PD TC = 25°C 3 V/ns 40 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque 1.13/10 Nm/lb.in. Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 4 g 300 °C GD D (TAB) S TO-263 AA (IXTA) G G = Gate, S = Source, S D (TAB) D = Drain, TAB = Drain Features y International standard packages y High voltage, Low RDS (on) HDMOSTM process y Rugged polysilicon gate y Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 25 µA IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 375 mA Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved 1000 V 2.5 TJ = 25°C TJ = 125°C 15 4.5 V ±100 nA 25 500 µA µA 17 Ω cell structure Applications y Switch-mode and resonant-mode power supplies Flyback inverters y y DC choppers y High frequency matching Advantages y Space savings y High power density DS98736B(10/04) IXTA 05N100 IXTP 05N100 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 500 mA, pulse test 0.5 0.85 S 240 pF Ciss Coss 22 pF Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 4 pF td(on) 11 ns 19 ns 40 ns 28 ns 10.5 nC 2.5 nC 5.0 nC tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A td(off) RG = 47Ω, (External) tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A Qgd RthJC RthCK 3.1 (IXTP) 0.50 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM TO-220 AB Dimensions Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Bottom Side K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 750 mA Repetitive; pulse width limited by TJM 3 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 2 V t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V 710 TO-263 AA Outline ns 1. 2. 3. 4. Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Gate Drain Source Drain Bottom Side 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXTA 05N100 IXTP 05N100 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 1.4 0.8 VGS = 10V 0.7 0.6 8V 7V 1.0 I D - Amperes I D - Amperes VGS = 10V 1.2 7V 6V 0.5 0.4 5.5V 0.3 0.8 6V 0.6 5.5V 0.4 0.2 5V 0.1 0.2 5V 4.5V 0.0 0.0 0 2 4 6 8 10 12 0 14 5 10 V D S - Volts Fig. 3. Output Characteristics @ 125ºC 25 30 3 VGS = 10V 0.7 2.8 7V 6V 0.5 VGS = 10V 2.6 R D S ( o n ) - Normalized 0.6 I D - Amperes 20 Fig. 4. Norm alized RDS(on) vs. Junction Te m perature 0.8 5.5V 0.4 0.3 5V 0.2 2.4 2.2 2 I D = 750mA 1.8 1.6 1.4 I D = 375mA 1.2 1 0.8 0.1 0.6 4.5V 0.4 0.0 0 5 10 15 V D S - Volts 20 25 -50 30 2.6 2.4 0 25 50 75 100 125 150 Fig. 6. Drain Curre nt vs . Cas e Tem pe rature 0.8 VGS = 10V -25 TJ - Degrees Centigrade Fig. 5. Norm alize d RDS(on) vs . ID TJ = 125ºC 0.7 2.2 0.6 2.0 I D - Amperes R D S ( o n ) - Normalized 15 V D S - Volts 1.8 1.6 1.4 0.5 0.4 0.3 0.2 1.2 TJ = 25ºC 1.0 0.1 0.0 0.8 0.0 0.2 0.4 0.6 0.8 1.0 I D - Amperes 1.2 1.4 1.6 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTA 05N100 IXTP 05N100 Fig. 8. Transconductance Fig. 7. Input Adm ittance 1.6 1.0 0.9 1.4 0.8 g f s - Siemens I D - Amperes 0.7 0.6 0.5 0.4 TJ = 125ºC 0.3 25ºC -40ºC 1.2 TJ = -40ºC 1.0 25ºC 125ºC 0.8 0.6 0.4 0.2 0.2 0.1 0.0 0.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.2 0.4 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 0.8 1.0 Fig. 10. Gate Charge 10 2.5 VG S - Volts 2.0 I S - Amperes 0.6 I D - Amperes 1.5 1.0 TJ = 125ºC 9 VDS = 500V 8 I D = 1A 7 I G = 1mA 6 5 4 3 0.5 2 TJ = 25ºC 1 0.0 0 0.4 0.5 0.6 0.7 0.8 0.9 0 V S D - Volts 1 2 3 4 5 6 7 8 9 10 11 Q G - nanoCoulombs Fig. 12. Maxim um Transient Therm al Resistance Fig. 11. Capacitance 1000 10.0 C iss 100 R( t h ) J C - ºC / W Capacitance - picoFarads f = 1MHz C oss 10 1.0 C rss 1 0.1 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 Pulse Width - milliseconds 1000