IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Single • Effective Coss Specified D • Lead (Pb)-free Available TO-220 APPLICATIONS • Switch Mode Power Supply (SMPS) G • Uninterruptable Power Supply • High Speed Power Switching S G D TYPICAL SMPS TOPOLOGY S • Single Transistor Flyback N-Channel MOSFET ORDERING INFORMATION Package TO-220 IRFBC30APbF SiHFBC30A-E3 IRFBC30A SiHFBC30A Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID IDM Linear Derating Factor Energyb UNIT V 3.6 2.3 A 14 0.69 W/°C mJ EAS 290 Repetitive Avalanche Currenta IAR 3.6 A Repetitive Avalanche Energya EAR 7.4 mJ Single Pulse Avalanche Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw PD 74 W dV/dt 7.0 V/ns TJ, Tstg - 55 to + 150 300d °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 41 mH, RG = 25 Ω, IAS = 3.6 A (see fig. 12). c. ISD ≤ 3.6 A, dI/dt ≤ 170 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91108 S-81243-Rev. A, 21-Jul-08 www.vishay.com 1 IRFBC30A, SiHFBC30A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.7 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 µA 600 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.67 - V/°C VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.5 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 25 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 2.2 Ab VGS = 10 V VDS = 50 V, ID = 2.2 Ab µA - - 2.2 Ω 2.1 - - S - 510 - - 70 - - 3.5 - - 730 - Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Effective Output Capacitance Total Gate Charge Coss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VDS = 1.0 V, f = 1.0 MHz VGS = 0 V Coss eff. VDS = 480 V, f = 1.0 MHz - 19 - VDS = 0 V to 480 Vc - 31 - - - 23 - - 5.4 Qg VGS = 10 V ID = 3.6 A, VDS = 480 V see fig. 6 and 13b pF Gate-Source Charge Qgs Gate-Drain Charge Qgd - - 11 Turn-On Delay Time td(on) - 9.8 - - 13 - - 19 - - 12 - - - 3.6 - - 14 - - 1.6 - 400 600 ns - 1.1 1.7 µC Rise Time Turn-Off Delay Time Fall Time tr td(off) VDD = 300 V, ID = 3.6 A, RG = 12 Ω, RD = 82 Ω, see fig. 10b tf nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/µsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91108 S-81243-Rev. A, 21-Jul-08 IRFBC30A, SiHFBC30A Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 1 0.1 4.5V 20μs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 TJ = 150 ° C 1 TJ = 25 ° C 0.1 0.01 4.0 Fig. 1 - Typical Output Characteristics I D , Drain-to-Source Current (A) 1 4.5V 20µs PULSE WIDTH TJ = 150 ° C 10 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 3.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1 6.0 7.0 8.0 9.0 Fig. 3 - Typical Transfer Characteristics TOP 0.1 0.1 5.0 VGS , Gate-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 10 V DS = 50V 20μs PULSE WIDTH ID = 3.6A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VDS , Drain-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig. 2 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91108 S-81243-Rev. A, 21-Jul-08 www.vishay.com 3 IRFBC30A, SiHFBC30A Vishay Siliconix VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 1000 Ciss 100 Coss 10 Crss 100 ISD , Reverse Drain Current (A) 10000 10 TJ = 150° C TJ = 25 ° C 1 V GS = 0 V 1 1 10 100 0.1 0.4 1000 0.8 OPERATION IN THIS AREA LIMITED BY RDS(on) VDS = 480V VDS = 300V VDS = 120V 16 12 8 10us 10 100us 1 1ms 4 FOR TEST CIRCUIT SEE FIGURE 13 0 4 8 12 16 20 24 0.1 10ms TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com 4 1.2 100 ID = 3.6A 0 1.0 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID , Drain Current (A) VGS , Gate-to-Source Voltage (V) 20 0.6 VSD ,Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 10000 Document Number: 91108 S-81243-Rev. A, 21-Jul-08 IRFBC30A, SiHFBC30A Vishay Siliconix RD VDS 4.0 VGS D.U.T. ID , Drain Current (A) RG + - VDD 3.0 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 2.0 Fig. 10a - Switching Time Test Circuit VDS 1.0 90 % 0.0 25 50 75 100 125 10 % VGS 150 TC , Case Temperature ( ° C) td(on) td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 9 - Maximum Drain Current vs. Case Temperature Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 t1 0.02 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS 15 V L VDS D.U.T RG IAS 20 V tp tp Driver + A - VDD 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91108 S-81243-Rev. A, 21-Jul-08 IAS Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFBC30A, SiHFBC30A EAS , Single Pulse Avalanche Energy (mJ) Vishay Siliconix 700 ID 1.6A 2.3A 3.6A TOP 600 BOTTOM 500 400 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( ° C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current QG 10 V V DSav , Avalanche Voltage ( V ) 740 QGS QGD VG 720 Charge Fig. 13a - Basic Gate Charge Waveform 700 Current regulator Same type as D.U.T. 680 50 kΩ 660 12 V 0.2 µF 0.3 µF + 640 D.U.T. 0.0 1.0 2.0 3.0 - VDS 4.0 IAV , Avalanche Current ( A) VGS 3 mA IG ID Current sampling resistors Fig. 12d - Typical Drain-to-Source Voltage vs. Avalanche Current www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91108 S-81243-Rev. A, 21-Jul-08 IRFBC30A, SiHFBC30A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - • • • • RG dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91108. Document Number: 91108 S-81243-Rev. A, 21-Jul-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1