ON MGSF1N03LT3 Power mosfet 30 v, 2.1 a, single n−channel, sot−23 Datasheet

MGSF1N03LT1
Preferred Device
Power MOSFET
30 V, 2.1 A, Single N−Channel, SOT−23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc−dc converters and power management in portable
and battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT−23 Surface Mount Package Saves Board Space
• Pb−Free Package is Available
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V(BR)DSS
RDS(on) TYP
ID MAX
80 m @ 10 V
30 V
2.1 A
125 m @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
N−Channel
Drain−to−Source Voltage
VDSS
30
V
D
Gate−to−Source Voltage
VGS
±20
V
ID
2.1
A
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
TA = 85°C
1.5
t ≤ 10 s
TA = 25°C
2.8
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
PD
0.73
W
Continuous Drain
Current (Note 2)
Steady
State
TA = 25°C
ID
1.6
A
Power Dissipation
(Note 2)
TA = 85°C
TA = 25°C
Pulsed Drain Current
ESD Capability (Note 3)
G
S
MARKING DIAGRAM/
PIN ASSIGNMENT
1.1
PD
0.42
W
3
3
Drain
tp = 10 s
IDM
6.0
A
C = 100 pF,
RS = 1500 ESD
125
V
2
SOT−23
CASE 318
STYLE 21
N3
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
2.1
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Symbol
Max
Unit
Junction−to−Ambient − Steady State (Note 1)
RJA
170
°C/W
Junction−to−Ambient − t < 10 s (Note 1)
RJA
100
Junction−to−Ambient − Steady State (Note 2)
RJA
300
Operating Junction and Storage Temperature
1
M
Parameter
N3
M
1
Gate
2
Source
= Specific Device Code
= Date Code
THERMAL RESISTANCE RATINGS
Parameter
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0.
 Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 7
1
ORDERING INFORMATION
Package
Shipping†
MGSF1N03LT1
SOT−23
3000/Tape & Reel
MGSF1N03LT3
SOT−23
10000/Tape & Reel
SOT−23
(Pb−Free)
10000/Tape & Reel
Device
MGSF1N03LT3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
MGSF1N03LT1/D
MGSF1N03LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
30
−
−
Vdc
−
−
−
−
1.0
10
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 Adc)
Adc
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
−
−
±100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
VGS(th)
1.0
1.7
2.4
Vdc
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 1.2 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
rDS(on)
−
−
0.08
0.125
0.10
0.145
ON CHARACTERISTICS (Note 1)
Ohms
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 Vdc)
Ciss
−
140
−
Output Capacitance
(VDS = 5.0 Vdc)
Coss
−
100
−
Transfer Capacitance
(VDG = 5.0 Vdc)
Crss
−
40
−
td(on)
−
2.5
−
tr
−
1.0
−
td(off)
−
16
−
tf
−
8.0
−
QT
−
6000
−
pC
IS
−
−
0.6
A
Pulsed Current
ISM
−
−
0.75
Forward Voltage (Note 2)
VSD
−
0.8
−
pF
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
(VDD = 15 Vdc, ID = 1.0 Adc,
RL = 50 )
Turn−Off Delay Time
Fall Time
Gate Charge (See Figure 6)
ns
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
V
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
2.5
VDS = 10 V
I D , DRAIN CURRENT (AMPS)
I D , DRAIN CURRENT (AMPS)
2.5
2
1.5
− 55°C
1
TJ = 150°C
0.5
0
VGS = 3.75 V
3.5 V
2
1.5
3.25 V
1
3.0 V
0.5
2.75 V
25°C
1
1.5
2
2.5
3
2.5 V
0
3.5
0
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
4
6
8
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
Figure 2. On−Region Characteristics
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2
10
MGSF1N03LT1
0.24
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
TYPICAL ELECTRICAL CHARACTERISTICS
150°C
0.19
VGS = 4.5 V
25°C
0.14
−55°C
0.09
0.04
0
0.1
0.3
0.2
0.4
0.5
0.7
0.6
0.9
0.8
1
0.16
150°C
0.14
VGS = 10 V
0.12
0.1
25°C
0.08
−55°C
0.06
0.04
0
0.2
0.4
ID, DRAIN CURRENT (AMPS)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
RDS(on) , DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
VGS = 10 V
ID = 2 A
1.2
VGS = 4.5 V
ID = 1 A
1
0.8
0.6
0.4
0.2
0
−55
0
−25
50
25
75
100
125
10
1.2
1.4
1.6
8
2
6
4
0
150
ID = 2.0 A
2
0
1000
3000
2000
4000
5000
6000
QT, TOTAL GATE CHARGE (pC)
Figure 6. Gate Charge
Figure 5. On−Resistance Variation with Temperature
350
1
VGS = 0 V
f = 1 MHz
TJ = 25°C
300
25°C
−55°C
C, CAPACITANCE (pF)
TJ = 150°C
0.1
0.01
250
200
150
Ciss
100
Coss
50
0.001
1.8
VDS = 24 V
TJ = 25°C
TJ, JUNCTION TEMPERATURE (°C)
I D , DIODE CURRENT (AMPS)
1
Figure 4. On−Resistance versus Drain Current
1.8
1.4
0.8
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
1.6
0.6
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
0.9
Crss
0
4
8
12
16
VDS, DRAIN−TO−SOURCE VOLTAGE (Volts)
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
Figure 8. Capacitance
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3
20
MGSF1N03LT1
PACKAGE DIMENSIONS
SOT−23
(TO−236)
CASE 318−08
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
A
L
3
1
V
B S
2
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
J
K
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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