TI INA326EA2K5G4 Precision, rail-to-rail i/o instrumentation amplifier Datasheet

INA3
INA3
26
INA326
INA327
27
SBOS222D – NOVEMBER 2001 – REVISED NOVEMBER 2004
Precision, Rail-to-Rail I/O
INSTRUMENTATION AMPLIFIER
FEATURES
DESCRIPTION
● PRECISION
LOW OFFSET: 100µV (max)
LOW OFFSET DRIFT: 0.4µV/°C (max)
EXCELLENT LONG-TERM STABILITY
VERY-LOW 1/f NOISE
The INA326 and INA327 (with shutdown) are high-performance, low-cost, precision instrumentation amplifiers with
rail-to-rail input and output. They are true single-supply
instrumentation amplifiers with very low DC errors and input
common-mode ranges that extends beyond the positive and
negative rails. These features make them suitable for applications ranging from general-purpose to high-accuracy.
● TRUE RAIL-TO-RAIL I/O
INPUT COMMON-MODE RANGE:
20mV Below Negative Rail to 100mV Above
Positive Rail
WIDE OUTPUT SWING: Within 10mV of Rails
SUPPLY RANGE: Single +2.7V to +5.5V
● SMALL SIZE
microPACKAGE: MSOP-8, MSOP-10
● LOW COST
APPLICATIONS
● LOW-LEVEL TRANSDUCER AMPLIFIER FOR
BRIDGES, LOAD CELLS, THERMOCOUPLES
● WIDE DYNAMIC RANGE SENSOR
MEASUREMENTS
● HIGH-RESOLUTION TEST SYSTEMS
● WEIGH SCALES
● MULTI-CHANNEL DATA ACQUISITION
SYSTEMS
● MEDICAL INSTRUMENTATION
● GENERAL-PURPOSE
Excellent long-term stability and very low 1/f noise assure
low offset voltage and drift throughout the life of the product.
The INA326 (without shutdown) comes in the MSOP-8 package. The INA327 (with shutdown) is offered in an MSOP-10.
Both are specified over the industrial temperature range,
–40°C to +85°C, with operation from –40°C to +125°C.
INA326 AND INA327 RELATED PRODUCTS
PRODUCT
INA337
INA114
INA118
INA122
INA128
INA321
FEATURES
Precision, 0.4µV/°C Drift, Specified –40°C to +125°C
50µV VOS, 0.5nA IB, 115dB CMR, 3mA IQ, 0.25µV/°C Drift
50µV VOS, 1nA IB, 120dB CMR, 385µA IQ, 0.5µV/°C Drift
250µV VOS, –10nA IB, 85µA IQ, Rail-to-Rail Output, 3µV/°C Drift
50µV VOS, 2nA IB, 125dB CMR, 750µA IQ, 0.5µV/°C Drift
500µV VOS, 0.5pA IB, 94dB CMRR, 60µA IQ, Rail-to-Rail Output
V+
2
1
VIN−
R1
VIN+
V−
7
4
6
INA326
8
3
5
R2
VO
G = 2(R2/R1)
C2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright © 2001-2004, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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PACKAGE/ORDERING INFORMATION(1)
PRODUCT
PACKAGE-LEAD
PACKAGE
DESIGNATOR
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
MARKING
ORDERING
NUMBER
TRANSPORT
MEDIA, QUANTITY
MSOP-8
DGK
–40°C to +85°C
B26
"
"
"
"
INA326EA/250
INA326EA/2K5
Tape and Reel, 250
Tape and Reel, 2500
MSOP-10
DGS
–40°C to +85°C
B27
"
"
"
"
INA327EA/250
INA327EA/2K5
Tape and Reel, 250
Tape and Reel, 2500
INA326
"
INA327
"
NOTE: (1) For the most current package and ordering information, download the latest version of this data sheet and see the Package Option Addendum located
at the end of the data sheet.
ABSOLUTE MAXIMUM RATINGS(1)
Supply Voltage .................................................................................. +5.5V
Signal Input Terminals: Voltage(2) .............................. –0.5V to (V+) + 0.5V
Current(2) ................................................... ±10mA
Output Short-Circuit ................................................................. Continuous
Operating Temperature Range ....................................... –40°C to +125°C
Storage Temperature Range .......................................... –65°C to +150°C
Junction Temperature .................................................................... +150°C
Lead Temperature (soldering, 10s) ............................................... +300°C
NOTES: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of the
device at these or any other conditions beyond those specified is not implied.
(2) Input terminals are diode clamped to the power-supply rails. Input signals that
can swing more than 0.5V beyond the supply rails should be current limited to
10mA or less.
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet its
published specifications.
PIN CONFIGURATION
Top View
INA326
INA327
R1
1
8
R1
R1
1
10 R1
VIN−
2
7
V+
VIN−
2
9
V+
VIN+
3
6
VO
VIN+
3
8
VO
V−
4
5
R2
V−
4
7
R2
(Connect to V+)
5
6
Enable
MSOP- 8
MSOP- 10
2
INA326, INA327
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SBOS222D
ELECTRICAL CHARACTERISTICS: VS = +2.7V to +5.5V
BOLDFACE limits apply over the specified temperature range, TA = –40°C to +85°C
At TA = +25°C, RL = 10kΩ, G = 100 (R1 = 2kΩ, R2 = 100kΩ), external gain set resistors, and IACOMMON = VS /2, with external equivalent filter corner of 1kHz, unless
otherwise noted.
INA326EA, INA327EA
PARAMETER
CONDITION
INPUT
Offset Voltage, RTI
VOS
VS = +5V, VCM = VS /2
Over Temperature
vs Temperature
dVOS/dT
vs Power Supply
PSR
VS = +2.7V to +5.5V, VCM = VS /2
Long-Term Stability
Input Impedance, Differential
Common-Mode
Input Voltage Range
Safe Input Voltage
Common-Mode Rejection
CMR VS = +5V, VCM = (V–) – 0.02V to (V+) + 0.1V
Over Temperature
INPUT BIAS CURRENT
Bias Current
vs Temperature
Offset Current
IB
VCM = VS /2
VS = +5V
IOS
VS = +5V
NOISE
Voltage Noise, RTI
f = 10Hz
f = 100Hz
f = 1kHz
f = 0.01Hz to 10Hz
Voltage Noise, RTI
f = 10Hz
f = 100Hz
f = 1kHz
f = 0.01Hz to 10Hz
Current Noise, RTI
f = 1kHz
f = 0.01Hz to 10Hz
Output Ripple, VO Filtered(2)
±20
±100
(V+) + 0.1
(V+) + 0.5
Ω || pF
Ω || pF
V
V
dB
dB
±3
See Note (1)
1010 || 2
1010 || 14
(V–) – 0.02
(V–) – 0.5
100
94
µV
µV
µV/°C
±0.1
±20
UNITS
±124
±0.4
114
±0.2
See Typical Characteristics
±0.2
µV/V
±2
nA
±2
nA
33
33
33
0.8
nV/ √Hz
nV/ √Hz
nV/ √Hz
µVp-p
120
97
97
4
nV/ √Hz
nV/ √Hz
nV/ √Hz
µVp-p
0.15
4.2
See Applications Information
pA/ √Hz
pAp-p
G = 2(R2/R1)
< 0.1
±0.08
±6
±0.004
G = 10, 100, VS = +5V, VO = 0.075V to 4.925V
G = 10, 100, VS = +5V, VO = 0.075V to 4.925V
G = 10, 100, VS = +5V, VO = 0.075V to 4.925V
RL = 100kΩ
RL = 10kΩ, VS = +5V
ISC
INTERNAL OSCILLATOR
Frequency of Auto-Correction
Accuracy
BW
G = 1 to 1k
SR
VS = +5V, All Gains, CL = 100pF
tS 1kHz Filter, G = 1 to 1k, VO = 2V step, CL = 100pF
10kHz Filter, G = 1 to 1k, VO = 2V step, CL = 100pF
1kHz Filter, 50% Output Overload, G = 1 to 1k
10kHz Filter, 50% Output Overload, G = 1 to 1k
INA326, INA327
SBOS222D
MAX
RS = 0Ω, G = 10, R1 = 20kΩ, R2 = 100kΩ
OUTPUT
Voltage Output Swing from Rail
FREQUENCY RESPONSE
Bandwidth(4), –3dB
Slew Rate(4)
Settling Time(4), 0.1%
0.01%
0.1%
0.01%
Overload Recovery(4)
TYP
RS = 0Ω, G = 100, R1 = 2kΩ, R2 = 100kΩ
GAIN
Gain Equation
Range of Gain
Gain Error(3)
vs Temperature
Nonlinearity
Over Temperature
Capacitive Load Drive
Short-Circuit Current
MIN
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75
75
5
10
> 10000
±0.2
±25
±0.01
V/V
%
ppm/°C
% of FS
500
±25
mV
mV
mV
pF
mA
90
±20
kHz
%
1
Filter Limited
0.95
1.3
130
160
30
5
kHz
ms
ms
µs
µs
µs
µs
3
ELECTRICAL CHARACTERISTICS: VS = +2.7V to +5.5V (Cont.)
BOLDFACE limits apply over the specified temperature range, TA = –40°C to +85°C
At TA = +25°C, RL = 10kΩ, G = 100 (R1 = 2kΩ, R2 = 100kΩ), external gain set resistors, and IACOMMON = VS /2, with external equivalent filter corner of 1kHz, unless
otherwise noted.
INA326EA, INA327EA
PARAMETER
POWER SUPPLY
Specified Voltage Range
Quiescent Current
Over Temperature
CONDITION
TYP
MAX
UNITS
2.4
+5.5
3.4
3.7
V
mA
mA
0.25
V
V
µs
µs
µA
+2.7
IQ
SHUTDOWN
Disable (Logic Low Threshold)
Enable (Logic High Threshold)
Enable Time(5)
Disable Time
Shutdown Current and Enable Pin Current
TEMPERATURE RANGE
Specified Range
Operating Range
Storage Range
Thermal Resistance
MIN
IO = 0, Diff VIN = 0V, VS = +5V
1.6
75
100
2
VS = +5V, Disabled
–40
–40
–65
θJA
MSOP-8, MSOP-10 Surface-Mount
5
+85
+125
+150
150
°C
°C
°C
°C/W
NOTES: (1) 1000-hour life test at 150°C demonstrated randomly distributed variation in the range of measurement limits—approximately 10µV. (2) See Applications
Information section, and Figures 1 and 3. (3) Does not include error and TCR of external gain-setting resistors. (4) Dynamic response is limited by filtering. Higher
bandwidths can be achieved by adjusting the filter. (5) See Typical Characteristics, “Input Offset Voltage vs Warm-Up Time”.
4
INA326, INA327
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SBOS222D
TYPICAL CHARACTERISTICS
At TA = 25°C, VS = +5V, Gain = 100, and RL = 10kΩ with external equivalent filter corner of 1kHz, unless otherwise noted.
GAIN vs FREQUENCY
1kHz FILTER
GAIN vs FREQUENCY
10kHz FILTER
80
80
60
60
G = 1k
G = 1k
40
Gain (dB)
Gain (dB)
40
G = 100
20
G = 10
0
G = 100
20
G = 10
0
G=1
G=1
−20
−20
−40
−40
10
100
1k
10k
Frequency (Hz)
100k
1M
10
COMMON- MODE REJECTION vs FREQUENCY
1kHz FILTER
100
1k
10k
Frequency (Hz)
100k
1M
COMMON- MODE REJECTION vs FREQUENCY
10kHz FILTER
160
160
G = 1k
140
140
G = 100
120
CMR (dB)
100
G = 10
80
G=1
G = 1k
100
80
G = 100
60
60
40
40
G=1
20
20
10
100
1k
10k
Frequency (Hz)
100k
1M
10
POWER- SUPPLY REJECTION vs FREQUENCY
Input-Referred Voltage Noise (nV/√Hz)
G = 100, 1k
100
G = 10
80
G=1
60
40
Filter Frequency
10kHz
1kHz
20
100
1k
10k
Frequency (Hz)
100k
1M
INPUT- REFERRED VOLTAGE NOISE AND
INPUT BIAS CURRENT NOISE vs FREQUENCY
10kHz FILTER
120
PSR (dB)
G = 10
0
10k
1
Current Noise
(all gains)
1k
0.1
G=1
G = 10
100
0.01
G = 100
G = 1000
10
10
100
1k
Frequency (Hz)
10k
100k
INA326, INA327
SBOS222D
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Input Bias Current Noise (pA/√Hz)
CMR (dB)
120
0.001
1
10
100
Frequency (Hz)
1k
10k
5
TYPICAL CHARACTERISTICS (Cont.)
At TA = 25°C, VS = +5V, Gain = 100, and RL = 10kΩ with external equivalent filter corner of 1kHz, unless otherwise noted.
INPUT OFFSET VOLTAGE vs TURN- ON TIME
1kHz FILTER, G = 100
INPUT OFFSET VOLTAGE vs WARM- UP TIME
10kHz FILTER, G = 100
Input Offset Voltage (20µV/div)
Input Offset Voltage (20µV/div)
Filter
Settling
Time
Device
Turn- On
Time
(75µs)
0
1
Turn- On Time (ms)
2
Device
Turn- On
Time
Filter
Settling
Time
0
SMALL- SIGNAL RESPONSE
G = 1, 10, AND 100
0.1
0.2
0.3
Warm- Up Time (ms)
0.4
SMALL- SIGNAL STEP RESPONSE
G = 1000
50mV/div
1kHz Filter
50mV/div
1kHz Filter
10kHz Filter
500µs/div
500µs/div
LARGE- SIGNAL RESPONSE
G = 1 TO 1000
0.01Hz TO 10Hz VOLTAGE NOISE
2V/div
200nV/div
1kHz Filter
10kHz Filter
10s/div
500µs/div
6
INA326, INA327
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SBOS222D
TYPICAL CHARACTERISTICS (Cont.)
At TA = 25°C, VS = +5V, Gain = 100, and RL = 10kΩ with external equivalent filter corner of 1kHz, unless otherwise noted.
OFFSET VOLTAGE PRODUCTION DISTRIBUTION
G=1
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
−10,000
−9000
−8000
−7000
−6000
−5000
−4000
−3000
−2000
−1000
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10,000
Population
Population
OFFSET VOLTAGE DRIFT PRODUCTION DISTRIBUTION
G=1
Offset Voltage Drift (µV/°C)
Offset Voltage (µV)
OFFSET VOLTAGE DRIFT PRODUCTION DISTRIBUTION
G = 10
−1000
−900
−800
−700
−600
−500
−400
−300
−200
−100
0
100
200
300
400
500
600
700
800
900
1000
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
Population
Population
OFFSET VOLTAGE PRODUCTION DISTRIBUTION
G = 10
Offset Voltage Drift (µV/°C)
Offset Voltage (µV)
OFFSET VOLTAGE PRODUCTION DISTRIBUTION
G = 100, 1000
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
0.24
0.26
0.28
0.30
0.32
0.34
0.36
0.38
0.40
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
10
20
30
40
50
60
70
80
90
100
Population
Population
OFFSET VOLTAGE DRIFT PRODUCTION DISTRIBUTION
G = 100, 1000
Offset Voltage Drift (µV/°C)
Offset Voltage (µV)
INA326, INA327
SBOS222D
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7
TYPICAL CHARACTERISTICS (Cont.)
At TA = 25°C, VS = +5V, Gain = 100, and RL = 10kΩ with external equivalent filter corner of 1kHz, unless otherwise noted.
GAIN ERROR PRODUCTION DISTRIBUTION
G = 100
−100
100.000
−110
31.600
−120
1.000
−130
0.316
−140
0.100
−150
0.030
−160
0.010
−170
0.003
−200
−180
−160
−140
−120
−100
−80
−60
−40
−20
0
20
40
60
80
100
120
140
160
180
200
−180
0
200k
400k
600k
Frequency (Hz)
Gain Error (m%)
QUIESCENT CURRENT vs TEMPERATURE
2.0
VS = +5V
1.5
2.5
1.0
IB−
0.5
VS = +2.7V
IB (nA)
IQ (mA)
2.0
1.5
0
−0.5
1.0
−1.0
0.5
8
0.001
1M
INPUT BIAS CURRENT vs TEMPERATURE
3.0
0
−50
800k
IB+
−1.5
−25
0
25
50
Temperature (°C)
75
100
125
−2.0
−50
−25
0
25
50
Temperature (°C)
75
100
125
INA326, INA327
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SBOS222D
VOUT (µVrms)
Population
VOUT (dBV)
INPUT- REFERRED RIPPLE SPECTRUM
G = 100
APPLICATIONS INFORMATION
SETTING THE GAIN
The INA326 is a 2-stage amplifier with each stage gain set
by R1 and R2, respectively (see Figure 5, “Inside the INA326”,
for details). Overall gain is described by the equation:
Figure 1 shows the basic connections required for operation of
the INA326. A 0.1µF capacitor, placed close to and across the
power-supply pins is strongly recommended for highest accuracy. RoCo is an output filter that minimizes auto-correction
circuitry noise. This output filter may also serve as an antialiasing filter ahead of an Analog-to-Digital (A/D) converter. It
is also optional based on desired precision.
G=2
Resistor values for commonly used gains are shown in
Figure 1. Gain-set resistor values for best performance are
different for +5V single-supply and for ±2.5V dual-supply
operation. Optimum value for R1 can be calculated by:
The INA326 uses a unique internal topology to achieve excellent Common-Mode Rejection (CMR). Unlike conventional
instrumentation amplifiers, CMR is not affected by resistance
in the reference connections or sockets. See “Inside the
INA326” for further detail. To achieve best high-frequency
CMR, minimize capacitance on pins 1 and 8.
R1
(Ω)
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
2000
5000
10000
400k
400k
400k
200k
100k
40k
20k
10k
4k
2k
2k
2k
2k
2k
2k
2k
DESIRED
GAIN
R1
(Ω)
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
2000
5000
10000
400k
400k
400k
400k
200k
80k
40k
20k
8k
4k
2k
2k
2k
2k
2k
2k
R1 = VIN, MAX/12.5µA
5
2.5
1
1
1
1
1
1
1
1
0.5
0.2
0.1
0.05
0.02
0.01
−2.5V
+2.5V
0.1µF
5
2.5
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.2
0.1
0.05
0.02
0.01
7
2
VIN−
1
R1
4
6
INA326
RO
VO 100Ω
VO Filtered
CO(1)
1µF
8
5
3
VIN+
G = 2(R2/R1)
fO = 1kHz
C2(1)
R2
IACOMMON(2)
(1) C2 and CO combine to form a 2-pole response that is −3dB at 1kHz.
Each individual pole is at 1.5kHz.
(2) Output voltage is referenced to IACOMMON (see text).
Single-supply operation may require
R2 > 100kΩ for full output swing.
This may produce higher input referred
offset voltage. See Offset Voltage,
Drift, and Circuit Values for detail.
V+
R2 || C2
(Ω || nF)
20k ||
40k ||
100k ||
200k ||
200k ||
200k ||
200k ||
200k ||
200k ||
200k ||
200k ||
500k ||
1M ||
2M ||
5M ||
10M ||
(2)
where R1 must be no less than 2kΩ.
R2 || C2
(Ω || nF)
20k ||
40k ||
100k ||
100k ||
100k ||
100k ||
100k ||
100k ||
100k ||
100k ||
200k ||
500k ||
1M ||
2M ||
5M ||
10M ||
(1)
The stability and temperature drift of the external gain-setting
resistors will affect gain by an amount that can be directly
inferred from the gain equation (1).
The output reference terminal is taken at the low side of R2
(IACOMMON).
DESIRED
GAIN
R2
R1
0.1µF
VIN−
2
7
1
R1
4
6
INA326
RO
VO 100Ω
VIN+
5
3
VO Filtered
CO(1)
1µF
8
R2
G = 2(R2/R1)
fO = 1kHz
(3)
C2(1)
IACOMMON(2)
(1) C2 and CO combine to form a 2-pole response that is −3dB at 1kHz.
Each individual pole is at 1.5kHz.
(2) Output voltage is referenced to IACOMMON (see text).
(3) Output offset voltage required for measurement near zero (see Figure 28).
NOTES: (1) C2 and CO combine to form a 2-pole response that is –3dB at 1kHz. Each individual pole is at 1.5kHz. (2) Output voltage is referenced to
IACOMMON (see text). (3) Output offset voltage required for measurement near zero (see Figure 6).
FIGURE 1. Basic Connections. NOTE: Connections for INA327 differ—see Pin Configuration for detail.
INA326, INA327
SBOS222D
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9
Following this design procedure for R1 produces the maximum
possible input stage gain for best accuracy and lowest noise.
Circuit layout and supply bypassing can affect performance.
Minimize the stray capacitance on pins 1 and 8. Use recommended supply bypassing, including a capacitor directly from
pin 7 to pin 4 (V+ to V–), even with dual (split) power supplies
(see Figure 1).
The enable time following shutdown is 75µs plus the settling
time due to filters (see Typical Characteristics, “Input Offset
Voltage vs Warm-up Time”). Disable time is 100µs. This
allows the INA327 to be operated as a “gated” amplifier, or
to have its output multiplexed onto a common output bus.
When disabled, the output assumes a high-impedance state.
INA327 PIN 5
OFFSET VOLTAGE, DRIFT, AND CIRCUIT VALUES
As with other multi-stage instrumentation amplifiers, inputreferred offset voltage depends on gain and circuit values. The
specified offset and drift performance is rated at R1 = 2kΩ,
R2 = 100kΩ, and VS = ±2.5V. Offset voltage and drift for other
circuit values can be estimated from the following equations:
VOS = 10µV + (50nA)(R2)/G
(3)
dVOS/dT = 0.12µV/°C + (0.16nA/°C)(R2)/G
(4)
These equations might imply that offset and drift can be
minimized by making the value of R2 much lower than the
values indicated in Figure 1. These values, however, have
been chosen to assure that the output current into R2 is kept
less than or equal to ±25µA, while maintaining R1’s value
greater than or equal to 2kΩ. Some applications with limited
output voltage swing or low power-supply voltage may allow
lower values for R2, thus providing lower input-referred offset
voltage and offset voltage drift.
Conversely, single-supply operation with R2 grounded requires that R2 values be made larger to assure that current
remains under 25µA. This will increase the input-referred
offset voltage and offset voltage drift.
Pin 5 of the INA327 should be connected to V+ to ensure
proper operation.
DYNAMIC PERFORMANCE
The typical characteristic “Gain vs Frequency” shows that the
INA326 has nearly constant bandwidth regardless of gain.
This results from the bandwidth limiting from the recommended filters.
NOISE PERFORMANCE
Internal auto-correction circuitry eliminates virtually all 1/f
noise (noise that increases at low frequency) in gains of 100
or greater. Noise performance is affected by gain-setting
resistor values. Follow recommendations in the “Setting
Gain” section for best performance.
Total noise is a combination of input stage noise and output
stage noise. When referred to the input, the total mid-band
noise is:
VN = 33nV / Hz +
800nV / Hz
G
(5)
Circuit conditions that cause more than 25µA to flow in R2 will
not cause damage, but may produce more nonlinearity.
The output noise has some 1/f components that affect
performance in gains less than 10. See typical characteristic
“Input-Referred Voltage Noise vs Frequency.”
INA327 ENABLE FUNCTION
High-frequency noise is created by internal auto-correction
circuitry and is highly dependent on the filter characteristics
chosen. This may be the dominant source of noise visible
when viewing the output on an oscilloscope. Low cutoff
frequency filters will provide lowest noise. Figure 3 shows the
typical noise performance as a function of cutoff frequency.
The INA327 can be enabled by applying a logic HIGH
voltage level to the Enable pin. Conversely, a logic LOW
voltage level will disable the amplifier, reducing its supply
current from 2.4mA to typically 2µA. For battery-operated
applications, this feature may be used to greatly reduce the
average current and extend battery life. This pin should be
connected to a valid high or low voltage or driven, not left
open circuit. The Enable pin can be modeled as a CMOS
input gate as in Figure 2.
V+
1k
Total Output Noise (µVRMS)
The INA327 adds an enable/shutdown function to the INA326.
Its pinout differs from the INA326—see the Pin Configuration
for detail.
G = 1000
100
10
G = 100
G = 10
G=1
1
2µA
1
Enable
6
10
100
1k
Required Filter Cutoff Frequency (Hz)
10k
FIGURE 3. Total Output Noise vs Required Filter Cutoff
Frequency.
FIGURE 2. Enable Pin Model.
10
INA326, INA327
www.ti.com
SBOS222D
Applications sensitive to the spectral characteristics of highfrequency noise may require consideration of the spurious
frequencies generated by internal clocking circuitry. “Spurs”
occur at approximately 90kHz and its harmonics (see typical
characteristic “Input-Referred Ripple Spectrum”) which may
be reduced by additional filtering below 1kHz.
Thermocouple
INA326
5
Insufficient filtering at pin 5 can cause nonlinearity with large
output voltage swings (very near the supply rails). Noise
must be sufficiently filtered at pin 5 so that noise peaks do not
“hit the rail” and change the average value of the signal.
Figure 3 shows guidelines for filter cutoff frequency.
FIGURE 4. Providing Input Bias Current Return Path.
HIGH-FREQUENCY NOISE
C2 and CO form filters to reduce internally generated autocorrection circuitry noise. Filter frequencies can be chosen to
optimize the trade-off between noise and frequency response of the application, as shown in Figure 3. The cutoff
frequencies of the filters are generally set to the same
frequency. Figure 3 shows the typical output noise for four
gains as a function of the –3dB cutoff frequency of each filter
response. Small signals may exhibit the addition of internally
generated auto-correction circuitry noise at the output. This
noise, combined with broadband noise, becomes most evident in higher gains with filters of wider bandwidth.
INPUT PROTECTION
The inputs of the INA326 are protected with internal diodes
connected to the power-supply rails. These diodes will clamp
the applied signal to prevent it from damaging the input
circuitry. If the input signal voltage can exceed the power
supplies by more than 0.5V, the input signal current should
be limited to less than 10mA to protect the internal clamp
diodes. This can generally be done with a series input
resistor. Some signal sources are inherently current-limited
and do not require limiting resistors.
FILTERING
INPUT BIAS CURRENT RETURN PATH
The input impedance of the INA326 is extremely high—
approximately 1010Ω. However, a path must be provided for
the input bias current of both inputs. This input bias current is
approximately ±0.2nA. High input impedance means that this
input bias current changes very little with varying input voltage.
Filtering can be adjusted through selection of R2C2 and
ROCO for the desired trade-off of noise and bandwidth.
Adjustment of these components will result in more or less
ripple due to auto-correction circuitry noise and will also
affect broadband noise. Filtering limits slew rate, settling
time, and output overload recovery time.
Input circuitry must provide a path for this input bias current
for proper operation. Figure 4 shows provision for an input
bias current path in a thermocouple application. Without a
bias current path, the inputs will float to an undefined potential and the output voltage may not be valid.
It is generally desirable to keep the resistance of RO relatively
low to avoid DC gain error created by the subsequent stage
loading. This may result in relatively high values for CO to
produce the desired filter response. The impedance of ROCO
can be scaled higher to produce smaller capacitor values if
the load impedance is very high.
INPUT COMMON-MODE RANGE
Certain capacitor types greater than 0.1µF may have dielectric absorption effects that can significantly increase settling
time in high-accuracy applications (settling to 0.01%). Polypropylene, polystyrene, and polycarbonate types are generally
good. Certain “high-K” ceramic types may produce slow
settling “tails.” Settling time to 0.1% is not generally affected
by high-K ceramic capacitors. Electrolytic types are not
recommended for C2 and CO.
Common instrumentation amplifiers do not respond linearly with
common-mode signals near the power-supply rails, even if “railto-rail” op amps are used. The INA326 uses a unique topology
to achieve true rail-to-rail input behavior (see Figure 5, “Inside
the INA326”). The linear input voltage range of each input
terminal extends to 20mV below the negative rail, and 100mV
above the positive rail.
INA326, INA327
SBOS222D
www.ti.com
11
INSIDE THE INA326
The INA326 uses a new, unique internal circuit topology
that provides true rail-to-rail input. Unlike other instrumentation amplifiers, it can linearly process inputs up to 20mV
below the negative power-supply rail, and 100mV above
the positive power-supply rail. Conventional instrumentation amplifier circuits cannot deliver such performance,
even if rail-to-rail op amps are used.
A1 and A2’s output stages. A2 combines the current in R1
with a mirrored replica of the current from A1. The resulting current in A2’s output and associated current mirror is
two times the current in R1. This current flows in (or out)
of pin 5 into R2. The resulting gain equation is:
G=2
The ability to reject common-mode signals is derived in
most instrumentation amplifiers through a combination of
amplifier CMR and accurately matched resistor ratios.
The INA326 converts the input voltage to a current.
Current-mode signal processing provides rejection of common-mode input voltage and power-supply variation without accurately matched resistors.
R2
R1
Amplifiers A1, A2, and their associated mirrors are powered from internal charge-pumps that provide voltage
supplies that are beyond the positive and negative supply
rails. As a result, the voltage developed on R2 can actually
swing 20mV below the negative power-supply rail, and
100mV above the positive supply rail. A3 provides a
buffered output of the voltage on R2. A3’s input stage is
also operated from the charge-pumped power supplies for
true rail-to-rail operation.
A simplified diagram shows the basic circuit function. The
differential input voltage, (VIN+) – (VIN–) is applied across
R1. The signal-generated current through R1 comes from
V+
V−
0.1µF
7
4
Current Mirror
INA326
IR1
2
VIN−
IR1
A1
1
Current Mirror
IR1
R1
Current Mirror
IR1
8
VIN+
3
2IR1
2IR1
A2
2IR1
A3
2IR1
Current Mirror
6
VO
2IR1
5
R2
C2
IACOMMON
FIGURE 5. Simplified Circuit Diagram.
12
INA326, INA327
www.ti.com
SBOS222D
APPLICATION CIRCUITS
2
R0
1
R1
6
INA326
VO
5
8
VREF
C0
3
R′2
R2 and R′2 are chosen to
R2
C2
create a small output offset
voltage (e.g., 100mV).
Gain is determined by
G = 2 (R2 || R′2)/R1
the parallel combination
of R2 and R′2.
FIGURE 6. Generating Output Offset Voltage.
VREF
2
1
INA326
2kΩ
RO
100Ω
6
8
5
A/D
Converter
CO
1µF
3
200kΩ
C2
200kΩ
G = 2(200kΩ || 200kΩ)/2kΩ = 100
FIGURE 7. Output Referenced to VREF/2.
+5V
RS must be chosen
so that the input voltage
does not exceed 100mV
beyond the rail.
RS
IL
2kΩ
2
7
1
R1
6
INA326
8
RO
100Ω
5
CO
1µF
3
NOTE: Connection point
of V+ will include (
) or
exclude (
) quiescent
current in the measurement
as desired. Output offset
required for measurements
near zero (see Figure 6).
R2
RL
VO
C2
VO = 2(IL × RS)
R2
R1
FIGURE 8. High-Side Current Shunt Measurement.
INA326, INA327
SBOS222D
www.ti.com
13
+5V
2
7
1
R1
6
INA326
R2
2kΩ
IL
VO = 2(IL × RS)
VO
5
8
3
RO
100Ω
CO
1µF
C2
R2
R1
RL
RS must be chosen so that
the input voltage does not
exceed 20mV beyond the rail.
RS
NOTE: Connection point of V− will include (
) or
exclude (
) quiescent current in the measurement
as desired. Output offset required for measurements
near zero (see Figure 6).
FIGURE 9. Low-Side Current Shunt Measurement.
1nF
RF = 100kΩ
NOTE: 0.2% accuracy. Current shunt
monitor circuit can be designed for −250V supply
with appropriate selection of high- voltage FET.
+5V
2
3
7
OPA336PA
ZVN4525G
(zetex)
2
IL
+
RS
VS = 0mV
to 50mV max
−
VCC
8
INA326
GND
4
3
RF
RI
RPULL- DOWN
200kΩ
8.45kΩ
(High- Voltage
n- Channel
7
FET)
1
RI = 2kΩ
VO = 2(IL × RS)
4
RSTART
100kΩ
RL
6
6
ZMM5231BDICT
5.1V
0.1µF
5
−48V
FIGURE 10. Low-Side –48V Current Shunt Monitor.
+48V
+
7
3
VSHUNT = 0mV
to 50mV
RSHUNT
−
RI
2kΩ
VCC
8
6
INA326
1
GND
2
4
Load
5
ZMM5231BDICT
5.1V
0.1µF
ZVP4525
(zetex)
(High- Voltage
p- Channel FET)
2
75kΩ
8.45kΩ
+5V
3
7
OPA336PA
1nF
6
VO = 0.1V to 4.9V
4
49.9kΩ
165kΩ
FIGURE 11. High-Side +48V Current Shunt Monitor.
14
INA326, INA327
www.ti.com
SBOS222D
2
+
1
VIN 2kΩ
6
INA326
8
−
VO = VIN (100) + VDAC
5
+5V
3
1nF
100kΩ
2
DAC
VDAC = 0.075V
to 4.925V
7
+15V
1
R1
VD
6
INA326
FIGURE 12. Output Offset Adjustment.
NC(1)
5
8
2
4
3
3
OPA277
6
VO
4
(2)
VCM
7
−15V
+1.8V to +5V
R2
C2
+5V
Logic
2
9
1
R1
INA327
7
10
3
NOTES: (1) NC denotes No Connection.
(2) Typical swing capability −20mV to (+5V + 100mV).
6 Enable
8
4
1nF
R2(1)
FIGURE 14. Output from Pin 5 to Allow Swing Beyond the Rail.
+5V
2
9
1
R3
INA327
6 Enable
8
3
VO
7
10
4
0V < VDAC < +5V
1nF
R4
DAC
R1
200kΩ
+5V
VREF = +2.5V
2
9
1
R5
INA327
2
IOUT =
7
1
3
R1
± 50nA
6
INA326
8
((+VREF) − (VDAC))
5
4
CF
RF = 10k
6 Enable
8
NOTE: Output resistance is typically 800MΩ.
Resolution < 5nA. Recommended values of CF = 1nF to 1µF.
7
10
3
+5V
(1)
4
1nF
R6(1)
NOTE: (1) R2, R4, and R6 could be a
single, shared resistor to save board space.
FIGURE 13. Multiplexed Output.
FIGURE 15. Programmable ±25µA Current Source with High
Output Resistance.
INA326, INA327
SBOS222D
www.ti.com
15
VREF = +2.5V
+2.5V
2
DAC
7
1
6
INA326
RI = 200kΩ
5
8
4
3
10kΩ
−2.5V
IOUT = 2
VREF − VDAC
200kΩ
49.9Ω
IO
1+
10kΩ
49.9Ω
RL
0.1µF
IO = ±5mA with
0.1µA stability.
FIGURE 16. Programmable ±5mA Current Source.
RI = 1kΩ
RF = 100kΩ
VI
+30V
20kΩ
2
3
+5V
7
OPA551
4
2
IB
2kΩ
6
INA326
5
8
3
−30V
7
1
4
10nF
20kΩ
6
VO = –27V
VOS = –100µV at 200mA
G=−
RF
RI
= −100V/V
Offset of the high- voltage op amp
is controlled by the INA326.
Internal charge pump in the INA326 allows
1MΩ this node to swing 20mV below ground
without a negative supply.
NOTES: (1) The OPA551 is a 60V op amp. (2) The INA326 does not require a
negative supply to correct for negative VOS values from the high-voltage op amp.
(3) Voltage offset contribution of IB (OPA551) is 100pA • 2kΩ = 0.2µV.
FIGURE 17. ±27V Output at 200mA Amplifier with 100µV Offset.
16
INA326, INA327
www.ti.com
SBOS222D
FIGURE 18. Single-Supply PID Temperature Control Loop.
INA326, INA327
SBOS222D
www.ti.com
17
R6
9.53kΩ
R7
1kΩ
POT
R11
14.3kΩ
IN−
R9
2kΩ
IN+
C6
10µF
2
1
8
3
VS
4
8
VBIAS
R8
100kΩ
5
C2
470nF
INA326
7
4
V+
V−
0.1µF
REF1004- 2.5
D1
R10
1kΩ
Bias Generator
Gain = 100V/V
Set Temp
RTHERM
10k‰
R12
15kΩ
+
R13
20Ω
Error Amplifier
VO
R4
20kΩ
R5
20kΩ
C5
1nF
6
VBIAS
VS
C1
1nF
V−
V+
1/2
OPA2340
R14
10kΩ
VS
R15
200Ω
C7
22nF
R16
Loop Gain
2kΩ
Adjust
POT
Common
+5V Input
VBIAS
1/4
OPA4340
R18
10kΩ
+
R20
5k‰
POT
C4
10 F
VS
R2
100kΩ
VBIAS
VBIAS
RINT
10MΩ
R19
100kΩ
CDIFF
1µF
VBIAS
R17
5kΩ
POT
1/4
OPA4340
RDIFF
1MΩ
Differentiator
TC: 100ms to 1s
1/4
OPA4340
Proportional
R1
100kΩ
V−
V+
1/4
OPA4340
VS
C3
1nF
CINT
1µF
Integrator
TC: 1s to 10s
R22
10kΩ
R21
10kΩ
R23
10kΩ
VBIAS
1/2
OPA2340
R25
10kΩ
C8
0.1µF
Summing Amplifier
Common
Output to
TEC
Driver
PACKAGE OPTION ADDENDUM
www.ti.com
18-Jul-2006
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
INA326EA/250
ACTIVE
MSOP
DGK
8
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
INA326EA/250G4
ACTIVE
MSOP
DGK
8
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
INA326EA/2K5
ACTIVE
MSOP
DGK
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
INA326EA/2K5G4
ACTIVE
MSOP
DGK
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
INA327EA/250
ACTIVE
MSOP
DGS
10
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
INA327EA/250G4
ACTIVE
MSOP
DGS
10
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
INA327EA/2K5
ACTIVE
MSOP
DGS
10
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
INA327EA/2K5G4
ACTIVE
MSOP
DGS
10
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Nov-2007
TAPE AND REEL BOX INFORMATION
Device
Package Pins
Site
Reel
Diameter
(mm)
Reel
Width
(mm)
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
W
Pin1
(mm) Quadrant
INA326EA/250
DGK
8
SITE 41
180
12
5.3
3.4
1.4
8
12
Q1
INA326EA/2K5
DGK
8
SITE 41
330
12
5.3
3.4
1.4
8
12
Q1
INA327EA/250
DGS
10
SITE 67
177
12
5.3
3.4
1.4
8
12
Q1
INA327EA/2K5
DGS
10
SITE 67
330
12
5.3
3.4
1.4
8
12
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Nov-2007
Device
Package
Pins
Site
Length (mm)
Width (mm)
Height (mm)
INA326EA/250
DGK
8
SITE 41
184.0
184.0
50.0
INA326EA/2K5
DGK
8
SITE 41
346.0
346.0
29.0
INA327EA/250
DGS
10
SITE 67
187.0
187.0
25.6
INA327EA/2K5
DGS
10
SITE 67
375.0
340.0
57.0
Pack Materials-Page 2
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