SEMICONDUCTORS MJE13005 SILICON POWER TRANSISTORS NPN power transistors in a TO-220 package. They are intended for high voltage, high speed power switching inductive circuits where fall time is critical. They are particularly suited for 115V and 220V SWITCHMODE applications such as switching regulator’s, inverters, motor controls, solenoid/relay drivers and deflection circuits Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC ICM IB IBM IE IEM PT tJ ts Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector Peak Current (*) Base Current Base Peak Current (*) Emitter Current Emitter Peak Current (*) Power Dissipation at Case Temperature Power Dissipation at free Air Temperature Junction Temperature Storage Temperature range @ Tmb < 25° Value Unit 400 700 9 4 8 2 4 6 12 75 V V V A A A A A A 2 150 -65 to +150 W °C (*)Pulse Width = 5ms, duty cycle <10%. THERMAL CHARACTERISTICS Symbol Ratings Value RthJC From Junction to Case Thermal Resistance 1.67 RthJA From Junction to Free-Air Thermal Resistance 62.5 02/10/2012 COMSET SEMICONDUCTORS Unit °C/W 1/3 SEMICONDUCTORS MJE13005 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO Ratings Test Condition(s) Collector-Emitter Sustaining Voltage (*) IC= 10 mA, IB= 0 TC= 25°C VCB = 700 V IB= 0 TC= 100°C Emitter Cutoff Current VEB= 9 V, IC= 0 IEBO IC= 1 A, IB= 200 mA TC= 25°C IC= 2 A Collector-Emitter VCE(SAT) IB= 500 mA TC= 100°C saturation Voltage (*) IC= 4 A, IB= 1 A I = 1 A, IB= 200 mA Base-Emitter Saturation C TC= 25°C VBE(SAT) IC= 2 A Voltage (*) IB= 500 mA TC= 100°C Forward Current transfer VCE= 5.0 V, IC= 1 A hFE ratio (*) VCE= 5.0 V, IC= 2 A Transition Frequency VCE= 10 V, IC= 0.5 A, f= 1 MHz fT Output Capacitance IE= 0 ; VCB= 10 V ; f= 1 MHz COB (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% ICBO Collector- Cutoff Current Min Typ Max Unit 400 - - V 65 1 5 1 0.5 0.6 1 1 1.2 1.6 1.5 60 40 - MHz pF Typ Max Unit - 0.1 0.7 4 0.9 µs 10 8 4 - mA mA V V - SWITCHING TIMES. Symbol td tr ts tf Ratings Delay Time Rise time Storage Time Fall Time Test Condition(s) VCC= 125 V; IC= 2 A IB1= -IB2= 400 mA tp = 25 µs, duty cycle <1%. Min - . 02/10/2012 COMSET SEMICONDUCTORS 2/3 SEMICONDUCTORS MJE13005 MECHANICAL DATA CASE TO-220 DIMENSIONS (mm) A B C D E F G H L M N P R S T U Min. Max. 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90 Pin 1 : Pin 2 : Pin 3 : Case : Base Collector Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 02/10/2012 [email protected] COMSET SEMICONDUCTORS 3/3