Transistors SMD Type NPN Transistors BCW71~BCW72 (KCW71~KCW72) SOT-23-3 Unit: mm 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● Low voltage (45 V) 1 ● Low noise. 0.55 ● Low current (100 mA) +0.2 1.6 -0.1 +0.2 2.8 -0.1 ■ Features 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1.1 +0.2 -0.1 ● PNP complements: BCW69 and BCW70. 1. Base 0-0.1 +0.1 0.68 -0.1 2. Emitter 3. Collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO 50 Collector - Emitter Voltage VCEO 45 Emitter - Base Voltage Unit V VEBO 5 Collector Current - Continuous IC 100 Peak Collector Current ICM 200 Peak Base Current IBM 200 Collector Power Dissipation PC 250 mW Rthja 500 K/W TJ 150 Tstg -55 to 150 Thermal Resistance From Junction to Ambient (Note.1) Junction Temperature Storage Temperature Range mA ℃ Note.1:Transistor mounted on an FR4 printed-circuit board. www.kexin.com.cn 1 Transistors SMD Type NPN Transistors BCW71~BCW72 (KCW71~KCW72) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Min Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 50 Collector- emitter breakdown voltage VCEO Ic= 2 mA， IB= 0 45 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO Emitter cut-off current IEBO Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) Base - emitter voltage VBE DC current gain BCW71 BCW72 DC current gain BCW71 uA IC=10 mA, IB=0.5mA 120 IC=50 mA, IB=2.5mA 210 IC=10 mA, IB=0.5mA 750 IC=50 mA, IB=2.5mA 850 VCE= 5V, IC= 2mA hFE VCE= 5V, IC= 2mA Transition frequency fT VCE= 5V, IC= 10mA,f=100MHz Range 110-220 200-450 Marking K1* K2* www.kexin.com.cn nA nA NF BCW72 100 10 Noise figure BCW71 V 100 VCB= 10V, IE=Ie= 0,f=1MHz Type Unit VCB= 20 V , IE= 0,TJ=100℃ IC = 200 u A; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz ■ Classification of hfe(2) Max VEB= 5V , IC=0 Cc Collector capacitance Typ VCB= 20 V , IE= 0 550 250 mV 700 90 VCE= 5V, IC= 10uA BCW72 2 Test Conditions 150 110 220 200 450 2.5 pF 10 100 dB MHz