Kersemi FQPF2N60 600v n-channel mosfet Datasheet

FQPF2N60
April 2000
QFET
TM
FQPF2N60
600V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
• 1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 V
• Low gate charge ( typical 9.0 nC)
transistors are produced using Corise Semiconductorÿs proprietary,
• Low Crss ( typical 5.0 pF)
planar stripe, DMOS technology.
• Fast switching
This advanced technology has been especially tailored to
• 100% avalanche tested
minimize on-state resistance, provide superior switching • Improved dv/dt capability
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
D
!
"
! "
G!
GD S
Absolute Maximum Ratings
Symbol
VDSS
"
"
TO-220F
!
FQPF Series
S
TC = 25°C unless otherwise noted
Parameter
ID
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
IDM
Drain Current
VGSS
Gate-Source Voltage
FQPF2N60
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Units
600
V
1.6
A
1.0
A
6.4
A
±30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
140
mJ
IAR
Avalanche Current
(Note 1)
1.6
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
2.8
4.5
28
0.22
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Typ
Max
Units
Thermal Resistance, Junction-to-Case
Parameter
--
4.46
°CW
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°CW
Symbol
C
= 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
600
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.4
--
V/°C
VDS = 600 V, VGS = 0 V
--
--
10
µA
IDSS
Zero Gate Voltage Drain Current
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
3.0
--
5.0
V
--
3.7
4.7
Ω
--
2.0
--
S
--
270
350
pF
--
40
50
pF
--
5
7
pF
--
10
30
ns
VDS = 480 V, TC = 125°C
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 0.8 A
gFS
Forward Transconductance
VDS = 50 V, ID = 0.8 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 2.4 A,
RG = 25 Ω
(Note 4, 5)
VDS = 480 V, ID = 2.4 A,
VGS = 10 V
(Note 4, 5)
--
25
60
ns
--
20
50
ns
--
25
60
ns
--
9.0
11
nC
--
1.6
--
nC
--
4.3
--
nC
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
1.6
ISM
--
--
6.4
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 1.6 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2.4 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 100mH, IAS = 1.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 2.4A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
(Note 4)
--
180
--
ns
--
0.72
--
µC
FQPF2N60
Electrical CharacteristicsT
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
0
ID, Drain Current [A]
10
ID , Drain Current [A]
Top :
-1
10
150
0
10
25
-55
Notes :
1. VDS = 50V
2. 250s Pulse Test
Notes :
1. 250s Pulse Test
2. TC = 25
-1
-2
10
-1
0
10
10
1
10
2
10
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
12
RDS(ON) [ ],
Drain-Source On-Resistance
IDR , Reverse Drain Current [A]
VGS = 10V
10
VGS = 20V
8
0
10
6
4
2
150
25
Notes :
1. VGS = 0V
2. 250s Pulse Test
Note : TJ = 25
0
-1
0
1
2
3
4
5
6
10
0.2
0.4
0.6
ID, Drain Current [A]
500
1.0
1.2
1.4
1.6
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VDS = 120V
10
Ciss
Coss
200
Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
100
VGS , Gate-Source Voltage [V]
400
300
0.8
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Capacitance [pF]
FQPF2N60
Typical Characteristics
VDS = 300V
VDS = 480V
8
6
4
2
Note : ID = 2.4A
0
-1
10
0
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
0
2
4
6
8
10
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
FQPF2N60
Typical Characteristics
3.0
1.2
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
RDS(ON) , (Normalized)
Drain-Source On-Resistance
1.1
1.0
Notes :
1. VGS = 0 V
2. ID = 250 A
0.9
0.8
-100
-50
0
50
100
2.0
1.5
1.0
Notes :
1. VGS = 10 V
2. ID = 1.2 A
0.5
150
0.0
-100
200
-50
0
o
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.8
Operation in This Area
is Limited by R DS(on)
1.5
100 µs
10 ms
0
10
100 ms
DC
-1
10
1.2
0.9
0.6
Notes :
o
0.3
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
1
10
2
10
0.0
25
3
10
10
50
Figure 9. Maximum Safe Operating Area
100
125
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
0
0 .2
N o te s :
1 . Z J C ( t ) = 4 . 4 6 /W M a x .
2 . D u ty F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z J C( t )
0 .1
0 .0 5
10
0 .0 2
-1
PDM
0 .0 1
JC
( t) , T h e r m a l R e s p o n s e
75
TC, Case Temperature []
VDS, Drain-Source Voltage [V]
t1
Z
ID, Drain Current [A]
1 ms
ID, Drain Current [A]
1
10
t2
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
10
1
150
FQPF2N60
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50K
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
ID (t)
VDS (t)
VDD
tp
Time
FQPF2N60
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
FQPF2N60
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
0.35 ±0.10
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
9.75 ±0.30
MAX1.47
2.76 ±0.20
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