Inchange Semiconductor Product Specification BUL45 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Fast switching speed ·High voltage APPLICATIONS ·Designed for use in electronic ballast and In switchmode power supplies PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 700 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 5 A ICM Collector current (peak) 10 A IB Base current 2 A 75 W 150 ℃ -65~150 ℃ MAX UNIT 1.65 ℃/W Ptot Tj Tstg Total power dissipation TC=25℃ Max.operating junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case Inchange Semiconductor Product Specification BUL45 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0;L=25mH 400 VCEsat-1 Collector-emitter saturation voltage IC=1A ;IB=0.2 A 0.175 0.25 V VCEsat-2 Collector-emitter saturation voltage IC=2A ;IB=0.4 A 0.25 0.4 V VBEsat-1 Base-emitter saturation voltage IC=1A ;IB=0.2 A 0.84 1.2 V VBEsat-2 Base-emitter saturation voltage IC=2A ;IB=0.4 A 0.89 1.25 V ICEO Collector cut-off current VCE =RatedVCEO; IB=0; 100 μA ICES Collector cut-off current VCE =RatedVCES; VEB=0; TC=125℃ 10 100 μA IEBO Emitter cut-off current VEB=9V; IC=0 0.1 mA hFE-1 DC current gain IC=0.3A;VCE=5V 14 hFE-2 DC current gain IC=2A;VCE=1V 7 14 hFE-3 DC current gain IC=10mA;VCE=5V 10 22 COB Output capacitance IE=0; VCB=10V;f=1MHz 50 fT Transition frequency IC=0.5 A ; VCE=10V 12 2 TYP. MAX UNIT V 34 75 pF MHz Inchange Semiconductor Product Specification BUL45 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3