TI1 LM5100CMYE/NOPB 3a, 2a and 1a high voltage high-side and low-side gate driver Datasheet

LM5100A, LM5100B, LM5100C, LM5101A, LM5101B, LM5101C
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SNOSAW2P – SEPTEMBER 2006 – REVISED MARCH 2013
LM5100A/B/C
LM5101A/B/C 3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers
Check for Samples: LM5100A, LM5100B, LM5100C, LM5101A, LM5101B, LM5101C
FEATURES
DESCRIPTION
•
The LM5100A/B/C and LM5101A/B/C High Voltage
Gate Drivers are designed to drive both the high-side
and the low-side N-Channel MOSFETs in a
synchronous buck or a half-bridge configuration. The
floating high-side driver is capable of operating with
supply voltages up to 100V. The “A” versions provide
a full 3A of gate drive while the “B” and “C” versions
provide 2A and 1A respectively. The outputs are
independently controlled with CMOS input thresholds
(LM5100A/B/C)
or
TTL
input
thresholds
(LM5101A/B/C). An integrated high voltage diode is
provided to charge the high-side gate drive bootstrap
capacitor. A robust level shifter operates at high
speed while consuming low power and providing
clean level transitions from the control logic to the
high-side gate driver. Under-voltage lockout is
provided on both the low-side and the high-side
power rails. These devices are available in the
standard SOIC-8 pin, SO PowerPad-8 pin and the
WSON-10 pin packages. The LM5100C and
LM5101C are also available in MSOP-PowerPad-8
package. The LM5101A is also available in WSON-8
pin package.
1
2
•
•
•
•
•
•
•
•
Drives Both a High-side and Low-side NChannel MOSFETs
Independent High and Low Driver Logic Inputs
Bootstrap Supply Voltage up to 118V DC
Fast Propagation Times (25 ns Typical)
Drives 1000 pF Load with 8 ns Rise and Fall
Times
Excellent Propagation Delay Matching (3 ns
typical)
Supply Rail Under-voltage Lockout
Low Power Consumption
Pin Compatible with HIP2100/HIP2101
TYPICAL APPLICATIONS
•
•
•
•
•
Current Fed Push-pull Converters
Half and Full Bridge Power Converters
Synchronous Buck Converters
Two Switch Forward Power Converters
Forward with Active Clamp Converters
Package
•
•
•
•
•
SOIC-8
SO PowerPad-8
WSON-8 (4 mm x 4 mm)
WSON-10 (4 mm x 4 mm)
MSOP-PowerPad-8
Simplified Block Diagram
HB
HO
UVLO
LEVEL
SHIFT
DRIVER
HS
HI
VDD
UVLO
LI
LO
DRIVER
VSS
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006–2013, Texas Instruments Incorporated
LM5100A, LM5100B, LM5100C, LM5101A, LM5101B, LM5101C
SNOSAW2P – SEPTEMBER 2006 – REVISED MARCH 2013
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Table 1. Input/Output Options
Part Number
Input Thresholds
Peak Output Current
LM5100A
CMOS
3A
LM5101A
TTL
3A
LM5100B
CMOS
2A
LM5101B
TTL
2A
LM5100C
CMOS
1A
LM5101C
TTL
1A
Connection Diagrams
VDD
1
HB
2
8
LO
7
VSS
VDD
1
HB
2
SOIC-8
8
LO
7
VSS
WSON-8
HO
3
6
LI
HS
4
5
HI
VDD
1
8
LO
HB
2
7
VSS
HO
3
6
LI
HS
4
5
HI
VDD
1
10
LO
HB
2
9
VSS
HO
3
8
LI
HS
4
7
HI
NC
5
6
NC
SO
PowerPad-8
HO
3
6
LI
HS
4
5
HI
WSON-10
Exposed Pad
Connect to VSS
VDD
LO
HB
MSOPPowerPad-8
HO
VSS
LI
HI
HS
PIN DESCRIPTIONS (1)
Pin #
SOIC-8
SO
Power
Pad-8
WSON8 (1)
WSON10 (1)
MSOPPowerPad
-8 (1)
Name
1
1
1
1
1
VDD
2
2
2
2
2
3
3
3
3
3
(1)
2
Description
Application Information
Positive gate
drive supply
Locally decouple to VSS using low ESR/ESL
capacitor located as close to the IC as possible.
HB
High-side gate
driver bootstrap
rail
Connect the positive terminal of the bootstrap
capacitor to HB and the negative terminal to HS. The
bootstrap capacitor should be placed as close to the
IC as possible.
HO
High-side gate
driver output
Connect to the gate of high-side MOSFET with a
short, low inductance path.
Note: For WSON-8, WSON-10 and MSOP-PowerPad-8 package, it is recommended that the exposed pad on the bottom of the
package is soldered to ground plane on the PC board, and that ground plane should extend out from beneath the IC to help
dissipate heat. For WSON-10 package, pins 5 and 6 have no connection.
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SNOSAW2P – SEPTEMBER 2006 – REVISED MARCH 2013
PIN DESCRIPTIONS(1) (continued)
Pin #
SO
Power
Pad-8
SOIC-8
4
WSON8 (1)
4
5
4
5
WSON10 (1)
MSOPPowerPad
-8 (1)
4
5
4
7
5
Name
Description
Application Information
HS
High-side
MOSFET
source
connection
Connect to the bootstrap capacitor negative terminal
and the source of the high-side MOSFET.
HI
High-side driver
control input
The LM5100A/B/C inputs have CMOS type
thresholds. The LM5101A/B/C inputs have TTL type
thresholds. Unused inputs should be tied to ground
and not left open.
The LM5100A/B/C inputs have CMOS type
thresholds. The LM5101A/B/C inputs have TTL type
thresholds. Unused inputs should be tied to ground
and not left open.
6
6
6
8
6
LI
Low-side driver
control input
7
7
7
9
7
VSS
Ground return
All signals are referenced to this ground.
8
8
8
10
8
LO
Low-side gate
driver output
Connect to the gate of the low-side MOSFET with a
short, low inductance path.
EP
EP
EP
EP
EP (WSON and SO
PowerPad and MSOPPowerPad packages)
Solder to the ground plane under the IC to aid in heat
dissipation.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1) (2)
−0.3V to +18V
VDD to VSS
−0.3V to +18V
HB to HS
LI or HI Input
−0.3V to VDD +0.3V
LO Output
−0.3V to VDD +0.3V
VHS −0.3V to VHB +0.3V
HO Output
HS to VSS
(3)
−5V to +100V
HB to VSS
118V
Junction Temperature
+150°C
−55°C to +150°C
Storage Temperature Range
ESD Rating HBM
(1)
(2)
(3)
(4)
(4)
2 kV
Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under
which operation of the device is specified. Operating Ratings do not imply performance limits. For performance limits and associated test
conditions, see the Electrical Characteristics Electrical Characteristics tables.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS node will generally not
exceed -1V. However, in some applications, board resistance and inductance may result in the HS node exceeding this stated voltage
transiently. If negative transients occur, the HS voltage must never be more negative than VDD-15V. For example if VDD = 10V, the
negative transients at HS must not exceed -5V.
The Human Body Model (HBM) is a 100 pF capacitor discharged through a 1.5kΩ resistor into each pin. 2 kV for all pins except Pin 2,
Pin 3 and Pin 4 which are rated at 1000V for HBM. Machine Model (MM) ratings are : 100V(MM) for Options B and C; 50V(MM) for
Option A.
Recommended Operating Conditions
VDD
+9V to +14V
HS
−1V to 100V
HB
VHS +8V to VHS +14V
HS Slew Rate
< 50 V/ns
−40°C to +125°C
Junction Temperature
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Electrical Characteristics
Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature (TJ) range of -40°C
to +125°C. Minimum and Maximum limits are specified through test, design, or statistical correlation. Typical values represent
the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise specified, VDD =
VHB = 12V, VSS = VHS = 0V, No Load on LO or HO (1).
Symbol
Parameter
Conditions
Min
Typ
Max
Units
SUPPLY CURRENTS
IDD
VDD Quiescent Current, LM5100A/B/C
LI = HI = 0V
0.1
0.2
VDD Quiescent Current, LM5101A/B/C
LI = HI = 0V
0.25
0.4
IDDO
VDD Operating Current
f = 500 kHz
2.0
3
mA
IHB
Total HB Quiescent Current
LI = HI = 0V
0.06
0.2
mA
IHBO
Total HB Operating Current
f = 500 kHz
1.6
3
mA
IHBS
HB to VSS Current, Quiescent
HS = HB = 100V
0.1
10
IHBSO
HB to VSS Current, Operating
f = 500 kHz
0.4
mA
µA
mA
INPUT PINS
VIL
Input Voltage Threshold LM5100A/B/C
Rising Edge
4.5
5.4
6.3
1.8
2.3
V
VIL
Input Voltage Threshold LM5101A/B/C
Rising Edge
1.3
VIHYS
Input Voltage Hysteresis LM5100A/B/C
500
mV
VIHYS
Input Voltage Hysteresis LM5101A/B/C
50
mV
RI
Input Pulldown Resistance
V
100
200
400
kΩ
6.0
6.9
7.4
V
UNDER VOLTAGE PROTECTION
VDDR
VDD Rising Threshold
VDDH
VDD Threshold Hysteresis
VHBR
HB Rising Threshold
VHBH
HB Threshold Hysteresis
0.5
5.7
6.6
V
7.1
0.4
V
V
BOOT STRAP DIODE
VDL
Low-Current Forward Voltage
IVDD-HB = 100 µA
0.52
0.85
VDH
High-Current Forward Voltage
IVDD-HB = 100 mA
0.8
1
V
V
RD
Dynamic Resistance LM5100A/B/C, LM5101A/B/C IVDD-HB = 100 mA
1.0
1.65
Ω
0.12
0.25
0.16
0.4
0.28
0.65
0.24
0.45
0.28
0.60
0.60
1.10
LO & HO GATE DRIVER
VOL
Low-Level Output Voltage LM5100A/LM5101A
IHO = ILO = 100 mA
Low-Level Output Voltage LM5100B/LM5101B
Low-Level Output Voltage LM5100C/LM5101C
VOH
High-Level Output Voltage LM5100A/LM5101A
High-Level Output Voltage LM5100B/LM5101B
High-Level Output Voltage LM5100C/LM5101C
IOHL
IOLL
(1)
4
Peak Pullup Current LM5100A/LM5101A
IHO = ILO = 100 mA
VOH = VDD– LO or
VOH = HB - HO
HO, LO = 0V
V
3
Peak Pullup Current LM5100B/LM5101B
2
Peak Pullup Current LM5100C/LM5101C
1
Peak Pulldown Current LM5100A/LM5101A
V
HO, LO = 12V
A
3
Peak Pulldown Current LM5100B/LM5101B
2
Peak Pulldown Current LM5100C/LM5101C
1
A
Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation
using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).
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SNOSAW2P – SEPTEMBER 2006 – REVISED MARCH 2013
Electrical Characteristics (continued)
Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature (TJ) range of -40°C
to +125°C. Minimum and Maximum limits are specified through test, design, or statistical correlation. Typical values represent
the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise specified, VDD =
VHB = 12V, VSS = VHS = 0V, No Load on LO or HO (1).
Symbol
Parameter
Conditions
Min
Typ
Max
Units
THERMAL RESISTANCE
SOIC-8
170
WSON-8 (3)
θJA
(2)
Junction to Ambient
WSON-10
40
(3)
40
SO PowerPad-8
MSOP-PowerPad-8
(2)
(3)
°C/W
40
(3)
80
The θJA is not a given constant for the package and depends on the printed circuit board design and the operating environment.
4 layer board with Cu finished thickness 1.5/1/1/1.5 oz. Maximum die size used. 5x body length of Cu trace on PCB top. 50 x 50mm
ground and power planes embedded in PCB. See Application Note AN-1187.
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Switching Characteristics
Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature (TJ) range of -40°C
to +125°C. Minimum and Maximum limits are specified through test, design, or statistical correlation. Typical values represent
the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise specified, VDD =
VHB = 12V, VSS = VHS = 0V, No Load on LO or HO (1).
Symbol
tLPHL
Parameter
Typ
Max
20
45
22
56
20
45
26
56
20
45
22
56
20
45
LO Turn-On Propagation Delay
LM5101A/B/C
26
56
Delay Matching: LO on & HO off
LM5100A/B/C
1
10
Delay Matching: LO on & HO off
LM5101A/B/C
4
10
Delay Matching: LO off & HO on
LM5100A/B/C
1
10
Delay Matching: LO on & HO off
LM5101A/B/C
4
10
LO Turn-Off Propagation Delay
LM5100A/B/C
Conditions
LI Falling to LO Falling
LO Turn-On Propagation Delay
LM5100A/B/C
LI Rising to LO Rising
ns
LO Turn-On Propagation Delay
LM5101A/B/C
tHPHL
HO Turn-Off Propagation Delay
LM5100A/B/C
HI Falling to HO Falling
ns
HO Turn-Off Propagation Delay
LM5101A/B/C
tHPLH
tMON
tMOFF
LO Turn-On Propagation Delay
LM5100A/B/C
HI Rising to HO Rising
ns
Either Output Rise/Fall Time
CL = 1000 pF
tR
Output Rise Time (3V to 9V)
LM5100A/LM5101A
CL = 0.1 µF
8
ns
430
ns
Output Rise Time (3V to 9V)
LM5100B/LM5101B
570
Output Rise Time (3V to 9V)
LM5100C/LM5101C
990
Output Fall Time (3V to 9V)
LM5100A/LM5101A
ns
ns
tRC, tFC
tF
Units
ns
LO Turn-Off Propagation Delay
LM5101A/B/C
tLPLH
Min
CL = 0.1 µF
260
Output Fall Time (3V to 9V)
LM5100B/LM5101B
430
Output Fall Time (3V to 9V)
LM5100C/LM5101C
715
tPW
Minimum Input Pulse Width that Changes
the Output
50
ns
tBS
Bootstrap Diode Reverse Recovery Time
37
ns
(1)
6
IF = 100 mA,
IR = 100 mA
ns
Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation
using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).
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SNOSAW2P – SEPTEMBER 2006 – REVISED MARCH 2013
Typical Performance Characteristics
Peak Sourcing Current
vs
VDD
Peak Sinking Current
vs
VDD
5.0
5.0
4.5
4.5
4.0
4.0
LM5100A/LM5101A
3.5
CURRENT (A)
CURRENT (A)
3.5
3.0
2.5
2.0
LM5100B/LM5101B
1.5
1.0
2.5
2.0
LM5100B/LM5101B
1.5
1.0
LM5100C/LM5101C
0.5
0.0
LM5100A/LM5101A
3.0
7
8
9
10
11
12
13
14
LM5100C/LM5101C
0.5
0.0
15
7
8
9
10
11
12
Figure 1.
Figure 2.
Sink Current
vs
Output Voltage
Source Current
vs
Output Voltage
3.5
14
15
3.5
VDD = 12V
VDD = 12V
3.0
3.0
LM5100A/LM5101A
LM5100A/LM5101A
2.5
CURRENT (A)
2.5
CURRENT (A)
13
VDD (V)
VDD (V)
2.0
LM5100B/LM5101B
1.5
1.0
2.0
LM5100B/LM5101B
1.5
1.0
LM5100C/LM5101C
0.5
0.0
LM5100C/LM5101C
0.5
0
2
4
6
8
10
0.0
12
0
OUTPUT VOLTAGE (V)
2
4
8
10
6
OUTPUT VOLTAGE (V)
Figure 3.
Figure 4.
LM5100A/B/C IDD
vs
Frequency
LM5101A/B/C IDD
vs
Frequency
100000
100000
VDD = 12V
VDD = 12V
CL = 4400 pF
CL = 4400 pF
CURRENT (PA)
CURRENT (PA)
10000
CL = 1000 pF
1000
100
10
0.1
12
10000
CL = 1000 pF
1000
CL = 0 pF
1
10
100
FREQUENCY (kHz)
Figure 5.
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CL = 0 pF
1000
100
0.1
1
10
100
1000
FREQUENCY (kHz)
Figure 6.
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Typical Performance Characteristics (continued)
Operating Current
vs
Temperature
IHB
vs
Frequency
2.3
100000
2.1
HB = 12V,
HS = 0V
IDDO (LM5101A/B/C)
CL = 4400 pF
10000
IDDO (LM5100A/B/C)
1.7
CURRENT (PA)
CURRENT (mA)
1.9
IHBO
1.5
1.3
CL = 1000 pF
1000
CL = 0 pF
100
1.1
0.9
0.7
-50 -25
0
25
50
75
10
0.1
100 125 150
1
10
100
1000
o
TEMPERATURE ( C)
FREQUENCY (kHz)
Figure 7.
Figure 8.
Quiescent Current
vs
Supply Voltage
Quiescent Current
vs
Temperature
350
400
300
350
IDD (LM5101A/B/C)
IDD (LM5101A/B/C)
250
CURRENT (PA)
CURRENT (PA)
300
250
200
IDD (LM5100A/B/C)
150
200
150
IDD (LM5100A/B/C)
100
100
0
50
IHB
50
8
9
10
11
12
13
14
15
IHB
0
-50 -25
16
0
25
50
75
100 125 150
TEMPERATURE (°C)
VDD, VHB (V)
Figure 9.
Figure 10.
Undervoltage Rising Thresholds
vs
Temperature
Undervoltage Threshold Hysteresis
vs
Temperature
0.60
7.30
7.20
0.55
VDDH
7.00
VDDR
HYSTERESIS (V)
THRESHOLD (V)
7.10
6.90
6.80
6.70
6.60
0.50
0.45
VHBH
0.40
VHBR
6.50
0.35
6.40
6.30
-50 -25
8
0
25
50
75 100 125 150
0.30
-50
-25 0_
25 50_ 75_100_125_150_
TEMPERATURE (°C)
TEMPERATURE (oC)
Figure 11.
Figure 12.
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Typical Performance Characteristics (continued)
LM5100A/B/C Input Threshold
vs
Temperature
Bootstrap Diode Forward Voltage
50
1.00E-01
THRESHOLD VOLTAGE (%VDD)
T = 150°C
1.00E-02
ID (A)
1.00E-03
T = 25°C
1.00E-04
T = -40°C
1.00E-05
1.00E-06
0.2
0.3
0.4
0.5
0.6
0.7
0.8
49
48
Rising
47
46
45
44
Falling
43
42
41
40
-50 -25
0.9
25
50
75 100 125 150
TEMPERATURE (°C)
VD (V)
Figure 13.
Figure 14.
LM5101A/B/C Input Threshold
vs
Temperature
LM5100A/B/C Input Threshold
vs
VDD
50
1.92
1.90
THRESHOLD VOLTAGE (%VDD)
1.91
THRESHOLD VOLTAGE (V)
0
Rising
1.89
1.88
1.87
1.86
Falling
1.85
1.84
1.83
1.82
1.81
1.80
-50 -25
49
48
46
45
44
43
25
50
Falling
42
41
40
0
Rising
47
75 100 125 150
8
9
10
11
12
13
14
15
16
VDD (V)
TEMPERATURE (°C)
Figure 15.
Figure 16.
LM5101A/B/C Input Threshold
vs
VDD
LM5100A/B/C Propagation Delay
vs
Temperature
1.92
35
1.90
Rising
1.89
30
1.88
DELAY (ns)
THRESHOLD VOLTAGE (V)
1.91
1.87
1.86
1.85
Falling
1.84
25
T_PLH
20
1.83
1.82
T_PHL
1.81
1.80
8
9
10
11
12
13
14
VDD (V)
Figure 17.
Copyright © 2006–2013, Texas Instruments Incorporated
15
16
15
-50
-25
0
25
50
75 100 125 150
TEMPERATURE (°C)
Figure 18.
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9
LM5100A, LM5100B, LM5100C, LM5101A, LM5101B, LM5101C
SNOSAW2P – SEPTEMBER 2006 – REVISED MARCH 2013
www.ti.com
Typical Performance Characteristics (continued)
LM5101A/B/C Propagation Delay
vs
Temperature
LO & HO Gate Drive - High Level Output Voltage
vs
Temperature
1.0
40
VDD = 12V
0.9
0.8
35
LM5100C/LM5101C
30
VOH (V)
DELAY (ns)
0.7
T_PLH
25
0.6
0.5
LM5100B/LM5101B
0.4
0.3
T_PHL
0.2
20
LM5100A/LM5101A
0.1
15
-50
-25
0
25
50
0.0
-50 -25
75 100 125 150
0
25
50
75 100 125 150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 19.
Figure 20.
LO & HO Gate Drive - Low Level Output Voltage
vs
Temperature
LO & HO Gate Drive - Output High Voltage
vs
VDD
0.50
0.8
VDD = 12V
IOUT = -100 mA
0.45
0.7
0.40
0.6
LM5100C/LM5101C
0.30
0.25
VOH (V)
VOL (V)
0.35
LM5100B/LM5101B
0.20
0.15
0.5
0.4
0.3
0.10
LM5100B/LM5101B
LM5100A/LM5101A
0.2
0.05
0.00
-50 -25
LM5100C/LM5101C
LM5100A/LM5101A
0
25
50
0.1
75 100 125 150
7
8
9
10
11
12
TEMPERATURE (°C)
VDD (V)
Figure 21.
Figure 22.
13
14
15
LO & HO Gate Drive - Output Low Voltage
vs
VDD
0.35
IOUT = 100 mA
VOL (V)
0.30
LM5100C/LM5101C
0.25
0.20
LM5100B/LM5101B
0.15
LM5100A/LM5101A
0.10
7
8
9
10
11
12
13
14
15
VDD (V)
Figure 23.
10
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Product Folder Links: LM5100A LM5100B LM5100C LM5101A LM5101B LM5101C
LM5100A, LM5100B, LM5100C, LM5101A, LM5101B, LM5101C
www.ti.com
SNOSAW2P – SEPTEMBER 2006 – REVISED MARCH 2013
TIMING DIAGRAM
LI
LI
HI
tHPLH
tLPLH
HI
tHPHL
tLPHL
LO
LO
HO
HO
tMON
tMOFF
Figure 24.
Layout Considerations
The optimum performance of high and low-side gate drivers cannot be achieved without taking due
considerations during circuit board layout. Following points are emphasized.
1. Low ESR / ESL capacitors must be connected close to the IC, between VDD and VSS pins and between the
HB and HS pins to support the high peak currents being drawn from VDD during turn-on of the external
MOSFET.
2. To prevent large voltage transients at the drain of the top MOSFET, a low ESR electrolytic capacitor must be
connected between MOSFET drain and ground (VSS).
3. In order to avoid large negative transients on the switch node (HS pin), the parasitic inductances in the
source of top MOSFET and in the drain of the bottom MOSFET (synchronous rectifier) must be minimized.
4. Grounding Considerations:
–
a) The first priority in designing grounding connections is to confine the high peak currents that charge
and discharge the MOSFET gate into a minimal physical area. This will decrease the loop inductance and
minimize noise issues on the gate terminal of the MOSFET. The MOSFETs should be placed as close as
possible to the gate driver.
–
b) The second high current path includes the bootstrap capacitor, the bootstrap diode, the local ground
referenced bypass capacitor and low-side MOSFET body diode. The bootstrap capacitor is recharged on
a cycle-by-cycle basis through the bootstrap diode from the ground referenced VDD bypass capacitor.
The recharging occurs in a short time interval and involves high peak current. Minimizing this loop length
and area on the circuit board is important to ensure reliable operation.
A recommended layout pattern for the driver is shown in the following figure. If possible a single layer placement
is preferred.
Copyright © 2006–2013, Texas Instruments Incorporated
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11
LM5100A, LM5100B, LM5100C, LM5101A, LM5101B, LM5101C
SNOSAW2P – SEPTEMBER 2006 – REVISED MARCH 2013
www.ti.com
Recommended Layout for Driver IC and
Passives
VDD
LO
HB
VSS
SO
PowerPAD-8
LI
HS
HI
To Hi-Side FET
D
Multi Layer
Option
LO
N
G
HO
HS
HO
Single Layer
Option
HO
To Low-Side FET
Power Dissipation Considerations
The total IC power dissipation is the sum of the gate driver losses and the bootstrap diode losses. The gate
driver losses are related to the switching frequency (f), output load capacitance on LO and HO (CL), and supply
voltage (VDD) and can be roughly calculated as:
PDGATES = 2 • f • CL • VDD2
(1)
There are some additional losses in the gate drivers due to the internal CMOS stages used to buffer the LO and
HO outputs. The following plot shows the measured gate driver power dissipation versus frequency and load
capacitance. At higher frequencies and load capacitance values, the power dissipation is dominated by the
power losses driving the output loads and agrees well with the above equation.Equation 1 This plot can be used
to approximate the power losses due to the gate drivers.
1.000
CL = 4400 pF
POWER (W)
0.100
CL = 1000 pF
0.010
CL = 0 pF
0.001
0.1
1.0
10.0
100.0
1000.0
SWITCHING FREQUENCY (kHz)
Figure 25. Gate Driver Power Dissipation (LO + HO)
VDD = 12V, Neglecting Diode Losses
12
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LM5100A, LM5100B, LM5100C, LM5101A, LM5101B, LM5101C
www.ti.com
SNOSAW2P – SEPTEMBER 2006 – REVISED MARCH 2013
The bootstrap diode power loss is the sum of the forward bias power loss that occurs while charging the
bootstrap capacitor and the reverse bias power loss that occurs during reverse recovery. Since each of these
events happens once per cycle, the diode power loss is proportional to frequency. Larger capacitive loads
require more energy to recharge the bootstrap capacitor resulting in more losses. Higher input voltages (VIN) to
the half bridge result in higher reverse recovery losses. The following plot was generated based on calculations
and lab measurements of the diode recovery time and current under several operating conditions. This can be
useful for approximating the diode power dissipation.
The total IC power dissipation can be estimated from the previous plots by summing the gate drive losses with
the bootstrap diode losses for the intended application.
0.100
POWER (W)
CL = 4400 pF
CL = 0 pF
0.010
0.001
1
10
100
1000
SWITCHING FREQUENCY (kHz)
Figure 26. Diode Power Dissipation VIN = 50V
Copyright © 2006–2013, Texas Instruments Incorporated
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13
LM5100A, LM5100B, LM5100C, LM5101A, LM5101B, LM5101C
SNOSAW2P – SEPTEMBER 2006 – REVISED MARCH 2013
www.ti.com
REVISION HISTORY
Changes from Revision O (March 2013) to Revision P
•
14
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 13
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PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
LM5100AM
ACTIVE
SOIC
D
8
95
TBD
Call TI
Call TI
-40 to 125
L5100
AM
LM5100AM/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
L5100
AM
LM5100AMR/NOPB
ACTIVE SO PowerPAD
DDA
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
L5100
AMR
LM5100AMRX/NOPB
ACTIVE SO PowerPAD
DDA
8
2500
Green (RoHS
& no Sb/Br)
SN
Level-3-260C-168 HR
L5100
AMR
LM5100AMX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
L5100
AM
LM5100ASD
ACTIVE
WSON
DPR
10
1000
TBD
Call TI
Call TI
-40 to 125
5100ASD
LM5100ASD/NOPB
ACTIVE
WSON
DPR
10
1000
Green (RoHS
& no Sb/Br)
SN
Level-1-260C-UNLIM
-40 to 125
5100ASD
LM5100ASDX
ACTIVE
WSON
DPR
10
4500
TBD
Call TI
Call TI
-40 to 125
5100ASD
LM5100ASDX/NOPB
ACTIVE
WSON
DPR
10
4500
Green (RoHS
& no Sb/Br)
SN
Level-1-260C-UNLIM
-40 to 125
5100ASD
LM5100BMA
ACTIVE
SOIC
D
8
95
TBD
Call TI
Call TI
-40 to 125
L5100
BMA
LM5100BMA/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
L5100
BMA
LM5100BMAX
ACTIVE
SOIC
D
8
2500
TBD
Call TI
Call TI
-40 to 125
L5100
BMA
LM5100BMAX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
L5100
BMA
LM5100BSD
ACTIVE
WSON
DPR
10
1000
TBD
Call TI
Call TI
-40 to 125
5100BSD
LM5100BSD/NOPB
ACTIVE
WSON
DPR
10
1000
Green (RoHS
& no Sb/Br)
SN
Level-1-260C-UNLIM
-40 to 125
5100BSD
LM5100BSDX
ACTIVE
WSON
DPR
10
4500
TBD
Call TI
Call TI
-40 to 125
5100BSD
LM5100BSDX/NOPB
ACTIVE
WSON
DPR
10
4500
Green (RoHS
& no Sb/Br)
SN
Level-1-260C-UNLIM
-40 to 125
5100BSD
LM5100CMA/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
L5100
CMA
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
LM5100CMAX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
L5100
CMA
LM5100CMY/NOPB
ACTIVE
MSOPPowerPAD
DGN
8
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
SXCB
LM5100CMYE/NOPB
ACTIVE
MSOPPowerPAD
DGN
8
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
SXCB
LM5100CMYX/NOPB
ACTIVE
MSOPPowerPAD
DGN
8
3500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
SXCB
LM5100CSD/NOPB
ACTIVE
WSON
DPR
10
1000
Green (RoHS
& no Sb/Br)
SN
Level-1-260C-UNLIM
-40 to 125
5100CSD
LM5100CSDX/NOPB
ACTIVE
WSON
DPR
10
4500
Green (RoHS
& no Sb/Br)
SN
Level-1-260C-UNLIM
-40 to 125
5100CSD
LM5101AM
ACTIVE
SOIC
D
8
95
TBD
Call TI
Call TI
-40 to 125
L5101
AM
LM5101AM/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
L5101
AM
LM5101AMR/NOPB
ACTIVE SO PowerPAD
DDA
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
L5101
AMR
LM5101AMRX/NOPB
ACTIVE SO PowerPAD
DDA
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
L5101
AMR
LM5101AMX
ACTIVE
SOIC
D
8
2500
TBD
Call TI
Call TI
-40 to 125
L5101
AM
LM5101AMX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
L5101
AM
LM5101ASD
ACTIVE
WSON
DPR
10
1000
TBD
Call TI
Call TI
-40 to 125
5101ASD
LM5101ASD-1/NOPB
ACTIVE
WSON
NGT
8
1000
Green (RoHS
& no Sb/Br)
SN
Level-1-260C-UNLIM
LM5101ASD/NOPB
ACTIVE
WSON
DPR
10
1000
Green (RoHS
& no Sb/Br)
SN
Level-1-260C-UNLIM
-40 to 125
5101ASD
LM5101ASDX
ACTIVE
WSON
DPR
10
4500
TBD
Call TI
Call TI
-40 to 125
5101ASD
LM5101ASDX-1/NOPB
ACTIVE
WSON
NGT
8
4500
Green (RoHS
& no Sb/Br)
SN
Level-1-260C-UNLIM
LM5101ASDX/NOPB
ACTIVE
WSON
DPR
10
4500
Green (RoHS
& no Sb/Br)
SN
Level-1-260C-UNLIM
Addendum-Page 2
5101A-1
5101A-1
-40 to 125
5101ASD
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
LM5101BMA
ACTIVE
SOIC
D
8
95
TBD
Call TI
Call TI
-40 to 125
L5101
BMA
LM5101BMA/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
L5101
BMA
LM5101BMAX
ACTIVE
SOIC
D
8
2500
TBD
Call TI
Call TI
-40 to 125
L5101
BMA
LM5101BMAX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
L5101
BMA
LM5101BSD
ACTIVE
WSON
DPR
10
1000
TBD
Call TI
Call TI
-40 to 125
5101BSD
LM5101BSD/NOPB
ACTIVE
WSON
DPR
10
1000
Green (RoHS
& no Sb/Br)
SN
Level-1-260C-UNLIM
-40 to 125
5101BSD
LM5101BSDX
ACTIVE
WSON
DPR
10
4500
TBD
Call TI
Call TI
-40 to 125
5101BSD
LM5101BSDX/NOPB
ACTIVE
WSON
DPR
10
4500
Green (RoHS
& no Sb/Br)
SN
Level-1-260C-UNLIM
-40 to 125
5101BSD
LM5101CMA
ACTIVE
SOIC
D
8
95
TBD
Call TI
Call TI
-40 to 125
L5101
CMA
LM5101CMA/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
L5101
CMA
LM5101CMAX
ACTIVE
SOIC
D
8
2500
TBD
Call TI
Call TI
-40 to 125
L5101
CMA
LM5101CMAX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
L5101
CMA
LM5101CMY/NOPB
ACTIVE
MSOPPowerPAD
DGN
8
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
SXDB
LM5101CMYE/NOPB
ACTIVE
MSOPPowerPAD
DGN
8
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
SXDB
LM5101CMYX/NOPB
ACTIVE
MSOPPowerPAD
DGN
8
3500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
SXDB
LM5101CSD
ACTIVE
WSON
DPR
10
1000
TBD
Call TI
Call TI
-40 to 125
5101CSD
LM5101CSD/NOPB
ACTIVE
WSON
DPR
10
1000
Green (RoHS
& no Sb/Br)
SN
Level-1-260C-UNLIM
-40 to 125
5101CSD
LM5101CSDX
ACTIVE
WSON
DPR
10
4500
TBD
Call TI
Call TI
-40 to 125
5101CSD
Addendum-Page 3
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
11-Apr-2013
Status
(1)
LM5101CSDX/NOPB
ACTIVE
Package Type Package Pins Package
Drawing
Qty
WSON
DPR
10
4500
Eco Plan
Lead/Ball Finish
(2)
Green (RoHS
& no Sb/Br)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
SN
Level-1-260C-UNLIM
(4)
-40 to 125
5101CSD
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 4
Samples
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Mar-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
LM5100AMRX/NOPB
Package Package Pins
Type Drawing
SO
Power
PAD
DDA
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM5100AMX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM5100ASD
WSON
DPR
10
1000
178.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5100ASD/NOPB
WSON
DPR
10
1000
178.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5100ASDX
WSON
DPR
10
4500
330.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5100ASDX/NOPB
WSON
DPR
10
4500
330.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5100BMAX
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM5100BMAX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM5100BSD
WSON
DPR
10
1000
178.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5100BSD/NOPB
WSON
DPR
10
1000
178.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5100BSDX
WSON
DPR
10
4500
330.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5100BSDX/NOPB
WSON
DPR
10
4500
330.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5100CMAX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM5100CMY/NOPB
MSOPPower
PAD
DGN
8
1000
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM5100CMYE/NOPB
MSOP-
DGN
8
250
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Mar-2013
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
Power
PAD
LM5100CMYX/NOPB
MSOPPower
PAD
DGN
8
3500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM5100CSD/NOPB
WSON
DPR
10
1000
178.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5100CSDX/NOPB
WSON
DPR
10
4500
330.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5101AMRX/NOPB
SO
Power
PAD
DDA
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM5101AMX
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM5101AMX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM5101ASD
WSON
DPR
10
1000
178.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5101ASD-1/NOPB
WSON
NGT
8
1000
178.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5101ASD/NOPB
WSON
DPR
10
1000
178.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5101ASDX
WSON
DPR
10
4500
330.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5101ASDX-1/NOPB
WSON
NGT
8
4500
330.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5101ASDX/NOPB
WSON
DPR
10
4500
330.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5101BMAX
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM5101BMAX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM5101BSD
WSON
DPR
10
1000
178.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5101BSD/NOPB
WSON
DPR
10
1000
178.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5101BSDX
WSON
DPR
10
4500
330.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5101BSDX/NOPB
WSON
DPR
10
4500
330.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5101CMAX
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM5101CMAX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM5101CMY/NOPB
MSOPPower
PAD
DGN
8
1000
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM5101CMYE/NOPB
MSOPPower
PAD
DGN
8
250
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM5101CMYX/NOPB
MSOPPower
PAD
DGN
8
3500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM5101CSD
WSON
DPR
10
1000
178.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5101CSD/NOPB
WSON
DPR
10
1000
178.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5101CSDX
WSON
DPR
10
4500
330.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
LM5101CSDX/NOPB
WSON
DPR
10
4500
330.0
12.4
4.3
4.3
1.3
8.0
12.0
Q1
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Mar-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM5100AMRX/NOPB
SO PowerPAD
DDA
8
2500
367.0
367.0
35.0
LM5100AMX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
LM5100ASD
WSON
DPR
10
1000
210.0
185.0
35.0
LM5100ASD/NOPB
WSON
DPR
10
1000
210.0
185.0
35.0
LM5100ASDX
WSON
DPR
10
4500
367.0
367.0
35.0
LM5100ASDX/NOPB
WSON
DPR
10
4500
367.0
367.0
35.0
LM5100BMAX
SOIC
D
8
2500
367.0
367.0
35.0
LM5100BMAX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
LM5100BSD
WSON
DPR
10
1000
210.0
185.0
35.0
LM5100BSD/NOPB
WSON
DPR
10
1000
210.0
185.0
35.0
LM5100BSDX
WSON
DPR
10
4500
367.0
367.0
35.0
LM5100BSDX/NOPB
WSON
DPR
10
4500
367.0
367.0
35.0
LM5100CMAX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
LM5100CMY/NOPB
MSOP-PowerPAD
DGN
8
1000
210.0
185.0
35.0
LM5100CMYE/NOPB
MSOP-PowerPAD
DGN
8
250
210.0
185.0
35.0
LM5100CMYX/NOPB
MSOP-PowerPAD
DGN
8
3500
367.0
367.0
35.0
LM5100CSD/NOPB
WSON
DPR
10
1000
210.0
185.0
35.0
LM5100CSDX/NOPB
WSON
DPR
10
4500
367.0
367.0
35.0
LM5101AMRX/NOPB
SO PowerPAD
DDA
8
2500
367.0
367.0
35.0
LM5101AMX
SOIC
D
8
2500
367.0
367.0
35.0
Pack Materials-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Mar-2013
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM5101AMX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
LM5101ASD
WSON
DPR
10
1000
210.0
185.0
35.0
LM5101ASD-1/NOPB
WSON
NGT
8
1000
210.0
185.0
35.0
LM5101ASD/NOPB
WSON
DPR
10
1000
210.0
185.0
35.0
LM5101ASDX
WSON
DPR
10
4500
367.0
367.0
35.0
LM5101ASDX-1/NOPB
WSON
NGT
8
4500
367.0
367.0
35.0
LM5101ASDX/NOPB
WSON
DPR
10
4500
367.0
367.0
35.0
LM5101BMAX
SOIC
D
8
2500
367.0
367.0
35.0
LM5101BMAX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
LM5101BSD
WSON
DPR
10
1000
210.0
185.0
35.0
LM5101BSD/NOPB
WSON
DPR
10
1000
210.0
185.0
35.0
LM5101BSDX
WSON
DPR
10
4500
367.0
367.0
35.0
LM5101BSDX/NOPB
WSON
DPR
10
4500
367.0
367.0
35.0
LM5101CMAX
SOIC
D
8
2500
367.0
367.0
35.0
LM5101CMAX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
LM5101CMY/NOPB
MSOP-PowerPAD
DGN
8
1000
210.0
185.0
35.0
LM5101CMYE/NOPB
MSOP-PowerPAD
DGN
8
250
210.0
185.0
35.0
LM5101CMYX/NOPB
MSOP-PowerPAD
DGN
8
3500
367.0
367.0
35.0
LM5101CSD
WSON
DPR
10
1000
210.0
185.0
35.0
LM5101CSD/NOPB
WSON
DPR
10
1000
210.0
185.0
35.0
LM5101CSDX
WSON
DPR
10
4500
367.0
367.0
35.0
LM5101CSDX/NOPB
WSON
DPR
10
4500
367.0
367.0
35.0
Pack Materials-Page 4
MECHANICAL DATA
DGN0008A
MUY08A (Rev A)
BOTTOM VIEW
www.ti.com
MECHANICAL DATA
DDA0008B
MRA08B (Rev B)
www.ti.com
MECHANICAL DATA
NGT0008A
SDC08A (Rev A)
www.ti.com
MECHANICAL DATA
DPR0010A
SDC10A (Rev A)
www.ti.com
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