BCW67, BCW68 PNP Silicon AF Transistors • For general AF applications 2 3 • High current gain 1 • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking BCW67A DAs 1=B 2=E 3=C SOT23 BCW67B DBs 1=B 2=E 3=C SOT23 BCW67C DCs 1=B 2=E 3=C SOT23 BCW68F DFs 1=B 2=E 3=C SOT23 BCW68G DGs 1=B 2=E 3=C SOT23 BCW68H DHs 1=B 2=E 3=C SOT23 1Pb-containing Pin Configuration Package package may be available upon special request 1 2007-04-20 BCW67, BCW68 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCW67 32 BCW68 45 Collector-base voltage Unit VCBO BCW67 45 BCW68 60 5 Emitter-base voltage VEBO Collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation, TS ≤ 79°C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS 1For 800 1 mA A mA -65 ... 150 Value ≤ 215 Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 2 2007-04-20 BCW67, BCW68 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 , BCW67 32 - - IC = 10 mA, IB = 0 , BCW68 45 - - IC = 10 µA, IE = 0 , BCW67 45 - - IC = 10 µA, IE = 0 , BCW68 60 - - 5 - - Collector-base breakdown voltage V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 µA, IC = 0 Collector-base cutoff current µA I CBO VCB = 32 V, IE = 0 - - 0.02 VCB = 45 V, IE = 0 - - 0.02 VCB = 32 V, IE = 0 , TA = 150 °C; BCW67 - - 20 VCB = 45 V, IE = 0 , TA = 150 °C; BCW68 - - 20 - - 20 Emitter-base cutoff current I EBO nA VEB = 4 V, IC = 0 DC current gain1) - h FE IC = 100 µA, VCE = 10 V, hFE-grp.A/F 35 - - IC = 100 µA, VCE = 10 V, hFE-grp.B/G 50 - - IC = 100 µA, VCE = 10 V, hFE-grp.C/H 80 - - IC = 10 mA, VCE = 1 V, hFE-grp.A/F 75 - - IC = 10 mA, VCE = 1 V, hFE-grp.B/G 120 - - IC = 10 mA, VCE = 1 V, hFE-grp.C/H 180 - - IC = 100 mA, V CE = 1 V, h FE-grp.A/F IC = 100 mA, V CE = 1 V, h FE-grp.B/G 100 160 250 160 250 400 IC = 100 mA, V CE = 1 V, h FE-grp.C/H 250 350 630 IC = 500 mA, V CE = 2 V, h FE-grp.A/F IC = 500 mA, V CE = 2 V, h FE-grp.B/G 35 - - 60 - - IC = 500 mA, V CE = 2 V, h FE-grp.C/H 100 - - 3 2007-04-20 BCW67, BCW68 DC Electrical Characteristics Symbol Parameter Values min. typ. Unit max. Characteristics Collector-emitter saturation voltage1) V VCEsat IC = 100 mA, IB = 10 mA - - 0.3 IC = 500 mA, IB = 50 mA - - 0.7 IC = 100 mA, IB = 10 mA - - 1.25 IC = 500 mA, IB = 50 mA - - 2 fT - 200 - MHz Ccb - 6 - pF Ceb - 60 - Base emitter saturation voltage 1) VBEsat AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 4 2007-04-20 BCW67, BCW68 DC current gain hFE = ƒ(IC) VCE = 1 V 10 3 BCW 67/68 5 100 ˚C Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 EHP00403 BCW 67/68 10 3 mA EHP00402 150 ˚C 25 ˚C -50 ˚C ΙC h FE 25 ˚C 10 2 5 10 2 -50 ˚C 5 10 1 5 10 1 10 5 0 5 10 0 10 -1 5 10 0 5 10 1 5 10 2 10 -1 0 mA 10 3 200 400 600 mV 800 ΙC VCE sat Collector cutoff current ICBO = ƒ(TA) VCBO = 25 V Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 10 10 3 BCW 67/68 EHP00401 10 5 nA mA 150 ˚C 25 ˚C -50 ˚C ΙC 10 2 Ι CB0 BCW 67/68 EHP00400 10 4 5 5 10 3 10 max 5 1 5 10 2 5 typ 0 10 1 10 5 5 10 -1 0 1 2 3 V 10 0 4 VBE sat 0 50 100 ˚C 150 TA 5 2007-04-20 BCW67, BCW68 Transition frequency fT = ƒ(IC) VCE = 5 V Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) BCW 67/68 10 3 EHP00398 65 pF MHz 5 55 CCB/C EB fT 50 45 40 35 10 2 30 25 5 20 CEB 15 10 CCB 5 10 1 10 0 5 10 1 5 10 2 0 0 mA 10 3 2 4 6 8 10 12 14 V 16 ΙC 20 VCB/VEB Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 550 mW BCW 67/68 Ptot max 5 Ptot DC EHP00399 D= 450 Ptot 400 tp T tp T BCW66K BCW66 10 2 350 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 300 250 200 10 1 150 5 100 50 0 0 15 30 45 60 75 90 105 120 °C TS 10 0 10 -6 150 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 2007-04-20 Package SOT23 BCW67, BCW68 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 7 2007-04-20 BCW67, BCW68 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2007-04-20