ATP301 Ordering number : ENA1457 SANYO Semiconductors DATA SHEET ATP301 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Avalanche resistance guarantee. 10V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol Conditions Ratings VDSS VGSS ID IDP Unit --100 PW≤10μs, duty cycle≤1% V --28 A --112 A 70 W 150 °C Channel Temperature PD Tch Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 54 mJ --28 A Avalanche Current *2 Tc=25°C V ±20 Note : *1 VDD=--30V, L=100μH, IAV=--28A *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=--1mA, VGS=0V VDS=--100V, VGS=0V Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA Marking : ATP301 Ratings min typ max --100 --2.0 Unit V --1 μA ±10 μA --3.5 V Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 42209QA MS IM TC-00001941 No. A1457-1/4 ATP301 Continued from preceding page. Parameter Symbol Ratings Conditions min VDS=--10V, ID=--14A ID=--14A, VGS=--10V typ Unit max 32 S Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on) Input Capacitance Ciss pF Coss VDS=--20V, f=1MHz VDS=--20V, f=1MHz 4000 Output Capacitance 270 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 150 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 32 ns See specified Test Circuit. 130 ns td(off) tf See specified Test Circuit. 330 ns See specified Test Circuit. 190 ns VDS=--60V, VGS=--10V, ID=--28A VDS=--60V, VGS=--10V, ID=--28A 73 nC 16 nC VDS=--60V, VGS=--10V, ID=--28A IS=--28A, VGS=0V --1.0 Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD 57 75 14 mΩ nC --1.5 V Package Dimensions unit : mm (typ) 7057-001 1.5 0.55 0.7 3 0.8 4.6 0.5 7.3 0.5 1.7 2 1 0.6 1 : Gate 2 : Drain 3 : Source 4 : Drain 0.4 0.1 2.3 SANYO : ATPAK Switching Time Test Circuit 0V --10V Avalanche Resistance Test Circuit VDD= --60V VIN L ≥50Ω RG ID= --14A RL=4.3Ω VIN D PW=10μs D.C.≤1% VOUT ATP301 0V --10V G P.G 0.4 0.4 9.5 4 2.3 4.6 2.6 6.05 6.5 50Ω VDD ATP301 50Ω S No. A1457-2/4 ATP301 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Single pulse ID= --14A 160 140 120 Tc=75°C 80 25°C 60 --25°C 40 20 0 --2 --3 --4 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V °C 25 C 5° --2 = Tc °C 75 10 7 5 3 2 1.0 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain Current, ID -- A 5 VDD= --60V VGS= --10V 7 5 td(off) 2 tf 100 7 tr 5 td(on) 3 25°C 5°C 14A 100 = -, ID V 0 1 80 = -V GS 60 40 20 0 --25 25 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 IT14598 75 100 125 150 IT14595 IS -- VSD --10 7 5 3 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V --1.2 IT14597 Ciss, Coss, Crss -- VDS 10000 f=1MHz 7 5 Ciss 3 2 1000 7 5 Coss 3 2 2 50 VGS=0V Single pulse Crss 2 10 --0.1 C Tc= 7 120 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 Ciss, Coss, Crss -- pF 3 --6 IT14593 140 IT14596 SW Time -- ID 1000 Switching Time, SW Time -- ns 3 --5 Single pulse --100 7 5 3 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 --4 Case Temperature, Tc -- °C 5 2 --3 RDS(on) -- Tc 0 --50 --10 VDS= --10V 7 --2 Cutoff Voltage, VGS(off) -- V IT14594 | yfs | -- ID 100 --1 160 180 100 0 IT14592 RDS(on) -- VGS 200 0 --4.5 --5.0 5°C --0.5 --1.0 Tc= 7 0 25 °C --10 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 --20 --25° C VGS= --4.0V --10 --30 25°C 0V 0. --4.5V --20 --40 --25 ° Drain Current, ID -- A --50 --40 --30 VDS= --10V 75°C 0V . --6 .0V --8 --1 Drain Current, ID -- A --50 ID -- VGS(off) --60 Tc=25°C Tc= --25° C ID -- VDS --60 100 7 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT14599 No. A1457-3/4 ATP301 VGS -- Qg --10 VDS= --60V ID= --28A --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --9 --7 --6 --5 --4 --3 --1 0 10 20 30 40 50 60 Total Gate Charge, Qg -- nC PD -- Tc 80 60 50 40 30 20 10 0 20 40 60 80 100 PW≤10μs 10 μs 10 0 μ 1m s 10 s 10 ms DC 0 ms op era tio n ID= --28A --10 7 5 3 2 --1.0 7 5 3 2 Operation in this area is limited by RDS(on). 120 Case Temperature, Tc -- °C 140 160 IT14602 2 3 5 7 --10 2 3 5 7--100 2 IT14601 Drain-to-Source Voltage, VDS -- V EAS -- Ta 120 70 0 --100 7 5 3 2 IT14600 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 80 70 IDP= --112A --0.1 7 5 3 Tc=25°C 2 Single pulse --0.01 2 3 5 7 --1.0 --0.1 --2 0 ASO 3 2 100 80 60 40 20 0 0 25 50 75 100 125 150 Ambient Temperature, Ta -- °C 175 IT14603 Note on usage : Since the ATP301 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2009. Specifications and information herein are subject to change without notice. PS No. A1457-4/4