HMC-ABH264 v01.0209 Amplifiers - Linear & Power - Chip 3 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 42 GHz Typical Applications Features The HMC-ABH264 is ideal for: High Output IP3: 29 dBm • Point-to-Point Radios High P1dB: 18 dBm • Point-to-Multi-Point Radios High Gain: 18.5 dB • VSAT Bias Supply: +5V • Military & Space 50 Ohm Matched Input/Output Die Size: 2.4 x 1.64 x 0.1 mm Functional Diagram General Description The HMC-ABH264 is a high dynamic range GaAs PHEMT MMIC Medium Power Amplifier which operates between 34 and 42 GHz. The HMC-ABH264 provides 18.5 dB of gain, and an output power of 18 dBm at 1 dB compression from a +5V supply. The HMC-ABH264 amplifier can easily be integrated into Multi-ChipModules (MCMs) due to its small size. This compact medium power amplifier die delivers consistent output power and excellent gain flatness across its rated bandwidth. All data is herein is measured with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25° C, Vd1 = Vd2 = Vdd = 5V, IddTOTAL = 120mA* Parameter Min. Frequency Range Gain 16 Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Typ. Max. Min. 34 - 40 Max. 18.5 16 Units GHz 18.5 dB 0.018 0.022 dB/ °C 16 12 dB 16 16.5 Typ. 40 - 42 18 16 15 dB 17 dBm 20.5 20.5 dBm 29 27.5 dBm Noise Figure 6.5 Total Supply Current (Idd)(Vdd = 5V, Vgg = -0.45V Typ.) 120 6.5 140 120 dB 140 mA * Adjust Vgg between -2 to 0V to achieve Idd = 120mA typical. 3-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC-ABH264 v01.0209 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 42 GHz Broadband Gain & Return Loss vs. Frequency Gain vs. Temperature 25 20 3 10 GAIN (dB) RESPONSE (dB) 20 S21 S11 S22 0 15 +25C +85C -55C 10 -10 5 -20 0 -30 32 34 36 38 40 42 32 44 34 Input Return Loss vs. Temperature 40 42 44 0 +25C +85C -55C +25C +85C -55C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) 38 Output Return Loss vs. Temperature 0 -10 -15 -20 -10 -15 -20 -25 -25 32 34 36 38 40 42 44 32 34 FREQUENCY (GHz) 38 40 42 44 Psat vs. Temperature 25 25 23 23 Psat (dBm) +25C +85C -55C 21 36 FREQUENCY (GHz) Output P1dB vs. Temperature P1dB (dBm) 36 FREQUENCY (GHz) FREQUENCY (GHz) 19 17 21 19 +25C +85C -55C 17 15 Amplifiers - Linear & Power - Chip 30 15 34 36 38 40 FREQUENCY (GHz) 42 44 34 36 38 40 42 44 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-2 HMC-ABH264 v01.0209 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 42 GHz Noise Figure vs. Temperature Output IP3 vs. Temperature 10 35 +25C +85C -55C IP3 (dBm) 31 29 27 4 +25C +85C -55C 0 23 34 36 38 40 42 34 44 36 38 42 44 Reverse Isolation vs. Temperature 25 0 20 -10 ISOLATION (dB) GAIN (dB), P1dB (dBm), Psat (dBm) Gain & Power vs. Supply Voltage @ 38 GHz, Idd= 120mA 15 Gain(dB) P1dB(dBm) Psat(dBm) 10 40 FREQUENCY (GHz) FREQUENCY (GHz) 5 +25C +85C -55C -20 -30 -40 0 4.5 -50 5 5.5 32 34 36 Vdd (V) 38 40 42 44 FREQUENCY (GHz) Power Compression @ 36 GHz Power Compression @ 40 GHz 24 Pout (dBm), GAIN (dB), PAE (%) 24 20 16 12 8 Pout (dBm) Gain (dB) PAE (%) 4 0 -18 -14 -10 -6 -2 2 INPUT POWER (dBm) 3-3 6 2 25 Pout (dBm), GAIN (dB), PAE (%) Amplifiers - Linear & Power - Chip 3 8 NOISE FIGURE (dB) 33 6 10 14 20 16 12 8 Pout (dBm) Gain (dB) PAE (%) 4 0 -18 -14 -10 -6 -2 2 6 10 14 INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC-ABH264 v01.0209 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 42 GHz Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd1, Vdd2, Vdd3) 5.5 V Vdd (V) Idd (mA) Gate Bias Voltage (Vgg) -1 to 0.3 Vdc 4.0 114 +10 dBm 4.5 117 5.0 120 RF Input Power (RFIN)(Vdd = +5Vdc) Channel Temperature 180 °C Continuous Pdiss (T= 85 °C) (derate 10.8 mW/°C above 85 °C) 1W Thermal Resistance (channel to die bottom) 93 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 120mA at +5V. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information 3 Amplifiers - Linear & Power - Chip Absolute Maximum Ratings [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-4 HMC-ABH264 v01.0209 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 42 GHz Pad Descriptions Pad Number Amplifiers - Linear & Power - Chip 3 3-5 Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms 2 RFOUT This pad is AC coupled and matched to 50 Ohms. 3, 5 Vd2, 1 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.01 µF are required. 4, 6 Vg2, 1 Gate control for amplifier. Adjust to achieve Idd of 120mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 0.01 µF are required. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic Assembly Diagram For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC-ABH264 v01.0209 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 34 - 42 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. 3 Amplifiers - Linear & Power - Chip The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-6