INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD50R2K0CE,IIPD50R2K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 3.6 A IDM Drain Current-Single Pulsed 6.1 A PD Total Dissipation @TC=25℃ 33 W Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 3.75 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD50R2K0CE,IIPD50R2K0CE ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1mA 500 VGS(th) Gate Threshold Voltage VDS=VGS; ID=50μA 2.5 RDS(on) Drain-Source On-Resistance VGS=13V; ID=0.6A IGSS Gate-Source Leakage Current VGS=20V IDSS Drain-Source Leakage Current VDS=500V; VGS= 0V VSD Diode forward voltage IF=0.8A, VGS = 0V isc website：www.iscsemi.cn CONDITIONS 2 MIN TYP MAX UNIT V 0.83 3.5 V 2 Ω 0.1 μA 1 μA V isc & iscsemi is registered trademark