FDMS8690 N-Channel Power Trench® MOSFET 30V, 27A, 9.0mΩ Features tm General Description Max rDS(on) = 9.0mΩ at VGS = 10V, ID = 14.0A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide an extremely versatile device. Max rDS(on) = 12.5mΩ at VGS = 4.5V, ID = 11.5A High performance trench technology for extremely low rDS(on) and gate charge Minimal Qgd (2.9nC typical) RoHS Compliant Application High Efficiency DC-DC converters. Notebook CPU power supply Multi purpose Point of Load S Pin 1 D S S D D G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous (Package limited) TC = 25°C -Continuous (Silicon limited) TC = 25°C TA = 25°C -Continuous TJ, TSTG Units V ±20 V 27 52 (Note 1a) -Pulsed PD Ratings 30 14 A 100 Power Dissipation TC = 25°C Power Dissipation TA = 25°C 37.8 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3.3 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS8690 Device FDMS8690 ©2007 Fairchild Semiconductor Corporation FDMS8690 Rev.C2 Package Power 56 1 Reel Size 13’’ Tape Width 12mm Quantity 3000 units www.fairchildsemi.com FDMS8690 N-Channel Power Trench® MOSFET February 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 V ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24V , VGS = 0V 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 3 V 34 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient 1 1.6 ID = 250µA, referenced to 25°C -4.5 VGS = 10V, ID = 14.0A 7.4 9.0 rDS(on) Drain to Source On Resistance VGS = 4.5V, ID = 11.5A 9.9 12.5 VGS = 10V, ID = 14.0A, TJ = 125°C 10.6 13.3 1260 1680 pF 535 715 pF 80 120 pF f = 1MHz 1.1 5.0 Ω 8 16 ns VDD = 15V, ID = 1.0A VGS = 10V, RGEN = 6Ω 1.8 10 ns 26 42 ns 19 35 ns 18.8 27 nC 10 14 nC mV/°C mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V Qg(5) Total Gate Charge at 5V VGS = 0V to 5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 15V ID = 14.0A 3.5 nC 2.9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 2.1A (Note 2) IF = 14.0 A, di/dt = 100A/µs 0.7 1.2 V 45 ns 33 nC Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 125°C/W when mounted on a minimum pad of 2 oz copper a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. FDMS8690 Rev.C2 2 www.fairchildsemi.com FDMS8690 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 100 ID, DRAIN CURRENT (A) VGS = 10V VGS = 3.5V 80 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 4.5V 60 VGS = 3V 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 3.0 1.6 1.4 1.2 1.0 ID = 14A VGS = 10V 0.8 -50 -25 0 25 50 75 100 125 150 o TJ, JUNCTION TEMPERATURE ( C) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 80 60 TJ = 150oC TJ = 25oC TJ 0 1.0 1.5 2.0 2.5 =-55oC 3.0 3.5 4.0 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics FDMS8690 Rev.C2 1.8 VGS = 3.5V 1.6 VGS = 4.5V 1.4 1.2 VGS = 10V 1.0 0.8 0 20 40 60 ID, DRAIN CURRENT(A) 80 100 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX ID = 14A 16 TJ = 150oC 12 8 TJ = 25oC 4 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 100 20 2.0 2 Figure 3. Normalized On- Resistance vs Junction Temperature 40 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 20 PULSE DURATION = 80µS DUTY CYCLE = 0.5% MAX 0.6 -75 VGS = 3V 2.2 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On-Region Characteristics 2.4 200 100 VGS = 0V 10 TJ = 150oC 1 0.1 TJ = 25oC TJ = -55oC 0.01 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMS8690 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 4000 ID= 14A CISS VDD= 10V 8 CAPACITANCE (pF) VGS,GATE-SOURCE VOLTAGE(V) 10 VDD= 15V 6 VDD= 20V 4 2 1000 COSS 100 CRSS f = 1MHz VGS = 0V 10 0.1 0 0 5 10 15 Qg,GATE CHARGE (nC) 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 15 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 50 TJ = 25oC 10 TJ = 100oC TJ 1 1E-3 = 125oC 12 VGS = 10V 9 6 VGS = 4.5V 3 o RθJA = 50 C/W 0.01 0.1 1 10 0 25 100 300 tAV, TIME IN AVALANCHE(ms) Figure 9. Unclamped Inductive Switching Capability P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 100us 10 1ms 1 0.01 0.1 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED 100ms 1s DC TA = 25oC 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 150 2000 1000 VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 100 I = I25 150 – T A ----------------------125 TA = 25oC 10 SINGLE PULSE 1 0.5 -4 -3 -2 10 10 10 -1 10 0 10 1 2 10 10 3 10 t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area FDMS8690 Rev.C2 50 75 100 125 TA, AMBIENT TEMPERATURE (oC) Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 200 100 0.1 30 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS8690 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE ZθJA 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 1E-3 5E-4 -4 10 -3 10 -2 10 -1 0 10 10 t, RECTANGULAR PULSE DURATION (s) 1 10 2 10 3 10 Figure 13. Transient Thermal Response Curve FDMS8690 Rev.C2 5 www.fairchildsemi.com FDMS8690 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMS8690 N-Channel Power Trench® MOSFET www.fairchildsemi.com 6 FDMS8690 Rev.C2 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ® ACEx Across the board. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I23 © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com