AP9980H/J Advanced Power Electronics Corp. ▼ Low Gate Charge N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Single Drive Requirement ▼ Fast Switching Performance BVDSS 80V RDS(ON) 45mΩ ID 21.3A G S Description G D S The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9980J) are available for low-profile applications. G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±25 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 21.3 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 13.4 A 80 A 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 41.7 W Linear Derating Factor 0.33 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Thermal Resistance Junction-case Max. 3.0 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W Data and specifications subject to change without notice 200406041 AP9980H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 80 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.07 - V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=12A - - 45 mΩ VGS=4.5V, ID=8A - - 55 mΩ VDS=VGS, ID=250uA 1 - 3 V VDS=10V, ID=12A - 20 - S VDS=80V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=64V ,VGS=0V - - 100 uA Gate-Source Leakage VGS=±25V - - ±100 nA ID=12A - 18 30 nC VGS(th) Gate Threshold Voltage gfs Forward Transconductance o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 2 VGS=0V, ID=250uA Qg Total Gate Charge Qgs Gate-Source Charge VDS=64V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 11 - nC VDS=40V - 11 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=12A - 20 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 29 - ns tf Fall Time RD=3.3Ω - 30 - ns Ciss Input Capacitance VGS=0V - 1810 2900 pF Coss Output Capacitance VDS=25V - 135 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 96 - pF Rg Gate Resistance f=1.0MHz - 1.6 - Ω Min. Typ. IS=20A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=12A, VGS=0V, - 57 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 140 - nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP9980H/J 60 50 10V 6.0V 5.0V 4.5V ID , Drain Current (A) 50 10V 6.0V 5.0V 4.5V T C =150 o C ID , Drain Current (A) T C =25 o C 40 30 20 40 30 20 V G =3.0V 10 10 V G =3.0V 0 0 0 3 6 9 12 15 0 18 3 9 12 15 18 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 54 2.2 I D = 12 A V G =10V 2.0 ID=8A o T C =25 C 1.8 Normalized R DS(ON) 50 RDS(ON) (mΩ ) 6 V DS , Drain-to-Source Voltage (V) 46 1.6 1.4 1.2 1.0 42 0.8 0.6 trr 0.4 38 3 5 7 9 -50 11 V GS , Gate-to-Source Voltage (V) 0 50 100 o Qrr 150 T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 8 2.5 6 o T j =150 C IS(A) VGS(th) (V) 2 o T j =25 C 4 1.5 1 2 0.5 0 0 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Junction Temperature Reverse Diode 150 AP9980H/J f=1.0MHz 12 10000 I D = 12 A C iss V DS = 4 0V V DS = 50 V V DS = 64 V 8 1000 C (pF) VGS , Gate to Source Voltage (V) 10 6 4 C oss C rss 100 2 0 10 0 10 20 30 40 1 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Normalized Thermal Response (R thjc) 10us 100us ID (A) 10 1ms 10ms 100ms 1 o DC T C =25 C Single Pulse 0.1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + TC Single Pulse 0.01 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 t , Pulse Width (s) Qrr Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform 1 Charge Fig 12. Gate Charge Waveform Q