ECH8411 Ordering number : ENA0073 N-Channel Silicon MOSFET ECH8411 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS ±12 V 9 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation V PW≤10µs, duty cycle≤1% 36 A Mounted on a ceramic board (900mm2✕0.8mm) 1.4 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min typ Unit max ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V 20 IDSS IGSS VDS=10V, ID=1mA VDS=10V, ID=4A 0.5 Forward Transfer Admittance VGS(off) yfs RDS(on)1 RDS(on)2 ID=4A, VGS=4V ID=2A, VGS=2.5V 12 16 mΩ Static Drain-to-Source On-State Resistance 16 23 mΩ ID=2A, VGS=1.8V VDS=10V, f=1MHz 25 36 mΩ Input Capacitance RDS(on)3 Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=10V, f=1MHz VDS=10V, f=1MHz Turn-ON Delay Time td(on) tr td(off) tf Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Rise Time Turn-OFF Delay Time Fall Time V(BR)DSS Conditions V 1 ±10 7 1.3 12 µA µA V S 1740 pF 310 pF 290 pF See specified Test Circuit. 30 ns See specified Test Circuit. 170 ns See specified Test Circuit. 240 ns See specified Test Circuit. 210 ns Marking : KR Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 83005PE MS IM TB-00001772 No. A0073-1/4 ECH8411 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg VDS=10V, VGS=4V, ID=9A 21 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=9A 3.5 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=9A Diode Forward Voltage VSD IS=9A, VGS=0V Package Dimensions unit : mm 7011-002 6.2 0.84 8 7 6 5 0.25 2.3 5 1 2 3 4 0.15 2.8 0.3 V Electrical Connection Top View 8 nC 1.2 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top view 1 0.25 4 0.65 2.9 0.07 0.9 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Bottom View Switching Time Test Circuit VDD=10V 4V 0V VIN ID=4A RL=2.5Ω VIN VOUT D PW=10µs D.C.≤1% G P.G 50Ω S ECH8411 No. A0073-2/4 ECH8411 ID -- VDS 13 12 2 7 6 5 4 --25°C 3 8 Ta=7 5°C 4 9 C 5 11 10 25° 4.0V 1.5V V GS= Drain Current, ID -- A 6 VDS=10V 14 1 .8 V 7.0V Drain Current, ID -- A 7 2.5V 8 ID -- VGS 15 3.0V 5.0V 9 3 2 1 1 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 1.0 0 1.0 1.5 2.0 2.5 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 50 0.5 IT10031 IT10032 RDS(on) -- Ta 40 35 ID=2A 4A 25 20 15 10 5 0 2 4 6 10 7 5 °C -25 = Ta 2 1.0 7 75 °C 25 °C 5 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 --40 --20 0 20 40 60 80 100 120 140 160 IT10034 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 5 7 10 IT10035 Drain Current, ID -- A 0.2 0.6 0.8 1.0 1.2 IT10036 Ciss, Coss, Crss -- VDS 7 VDD=10V VGS=4V 5 0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 7 f=1MHz 5 3 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 5 0.01 7 5 3 2 0.001 3 0.1 0.01 10 3 2 VDS=10V 3 15 Ambient Temperature, Ta -- °C Source Current, IS -- A Forward Transfer Admittance, yfs -- S 2 A I =2 2.5V, D V GS= 4A .0V, I D= V GS=4 20 IT10033 yfs -- ID 3 25 0 --60 8 Gate-to-Source Voltage, VGS -- V A I =2 1.8V, D V GS= 5°C 25°C 0 30 Ta= 7 30 35 C 40 --25° 45 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C td (off) 2 tf 100 tr 7 5 td(on) 3 2 0.1 Ciss 2 1000 7 5 Coss Crss 3 2 100 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT10037 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 IT10038 No. A0073-3/4 ECH8411 VGS -- Qg 100 7 5 VDS=10V ID=9A 3.5 3 2 3.0 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 4.0 2.5 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 12 14 16 18 20 Total Gate Charge, Qg -- nC IT10039 PD -- Ta 1.6 Allowable Power Dissipation, PD -- W 22 10 7 5 3 2 ASO 1m s ID=9A 10 ms 10 DC 0m s op era 1.0 7 5 3 2 0.1 7 5 3 2 ≤10µs IDP=36A Operation in this area is limited by RDS(on). tio n Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT10111 1.4 M ou 1.2 nt ed 1.0 on ac er am ic 0.8 bo ar 0.6 d (9 00 m 0.4 m2 ✕ 0. 8m m ) 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10112 Note on usage : Since the ECH8411 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2005. Specifications and information herein are subject to change without notice. PS No. A0073-4/4