DN2470 DN2470 Initial Release N-Channel Depletion-Mode Vertical DMOS FET Features General Description This low threshold depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermallyinduced secondary breakdown. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakages Application Normally-on switches Solid state relays Battery operated systems Converters Linear amplifiers Constant current sources Telecom Supertex's vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package Option Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* BVDSX BVDGX ±20V -55°C to +150°C 300°C * Distance of 1.6mm from case for 10 seconds. ** “Green” Certified Package Ordering Information Order Number / Package TO-252 DN2470K4 DN2470K4-G ** BVDSX / BVDGX RDS(ON) (max) IDSS (typ) 700V 700V 42Ω 42Ω 500mA 500mA NR011905 1 Rev. 1 011105 DN2470 Thermal Characteristics Package ID(continuous)* ID(pulsed) TO-252 170mA 500mA θJA °C/W 50** θJC °C/W 6.25 Power Dissipation @ TA=25°C 2.5W** IDR* IDRM 170mA 500mA * ID(continuous) is limited by maximum rated TJ of 150°C ** Mounted on FR4, 25mm x 25mm x 1.57mm Electrical Characteristics Symbol (@25°C unless otherwise specified) VGS(OFF) ∆VGS(OFF) IGSS Parameter Drain-to-Source Breakdown Voltage Gate-to-Source OFF Voltage Change in VGS(OFF) with Temperature Gate Body Leakage ID(OFF) Drain-to-Source Leakage Current IDSS RDS(ON) ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Saturated Drain-to-source Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-Off Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time BVDSX Min Typ Max 700 Units V -1.5 -3.5 4.5 100 1.0 V mV/°C nA µA 1.0 mA 42 1.1 mA Ω %/°C mmho 500 100 540 60 25 30 45 45 60 1.8 800 Conditions VGS=-5V, ID=100µA VDS=25V, ID=10µA VDS=25V, ID=10µA VGS=±20V, VDS=0V VGS=-10V, VDS=Max Rating VGS=-10V, VDS=0.8 Max Rating, TA=125°C VGS=0V, VDS=25V VGS=0V, ID=100mA VGS=0V, ID=100mA ID=100mA, VDS=10V pF VGS=-10V, VDS=25V f=1MHz ns VDD=25V, ID=100mA, RGEN=25 Ω V ns VGS=0V, ISD=200mA VGS=0V, ISD=200mA Notes: 1) All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.) 2) All AC parameters sample tested. Switching Waveforms and Test Circuit 0V VDD 90% RL Input -10V Pulse Generator 10% t(ON) td(ON) VDD t(OFF) tr 10% td(OFF) OUTPUT RGEN tf D.U.T Input 10% Output 0V Doc# DSFP-DN2470 90% 90% NR011905 2 Rev. 1 011105