eupec BSM75GB120DLC Hchstzulssige werte maximum rated value Datasheet

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM75GB120DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
VCES
1200
V
TC = 80 °C
IC,nom.
75
A
TC = 25 °C
IC
170
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms, TC = 80°C
ICRM
150
A
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Ptot
690
W
VGES
+/- 20V
V
IF
75
A
IFRM
150
A
2
I t
1,19
kA2s
VISOL
2,5
kV
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
Grenzlastintegral der Diode
2
I t - value, Diode
VR = 0V, t p = 10ms, T Vj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
Charakteristische Werte / Characteristic values
min.
typ.
max.
-
2,1
2,6
V
-
2,4
2,9
V
VGE(th)
4,5
5,5
6,5
V
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
IC = 75A, V GE = 15V, Tvj = 25°C
VCE sat
IC = 75A, V GE = 15V, Tvj = 125°C
Gate-Schwellenspannung
gate threshold voltage
IC = 3mA, V CE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V...+15V
QG
-
0,8
-
µC
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V
Cies
-
5,1
-
nF
Rückwirkungskapazität
reverse transfer capacitance
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V
Cres
-
0,33
-
nF
VCE = 1200V, V GE = 0V, Tvj = 25°C
ICES
Kollektor-Emitter Reststrom
collector-emitter cut-off current
VCE = 1200V, V GE = 0V, Tvj = 125°C
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, V GE = 20V, Tvj = 25°C
prepared by: Mark Münzer
date of publication: 9.9.1999
approved by: M. Hierholzer
revision: 2
1(8)
IGES
-
3
92
µA
-
300
-
µA
-
-
400
nA
Seriendatenblatt_BSM75GB120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM75GB120DLC
Charakteristische Werte / Characteristic values
min.
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
VGE = ±15V, R G = 10Ω, Tvj = 25°C
td,on
VGE = ±15V, R G = 10Ω, Tvj = 125°C
Anstiegszeit (induktive Last)
rise time (inductive load)
tr
td,off
VGE = ±15V, R G = 10Ω, Tvj = 25°C
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
IC = 75A, V CE = 600V, V GE = 15V
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
IC = 75A, V CE = 600V, V GE = 15V
RG = 10Ω, Tvj = 125°C, LS = 60nH
RG = 10Ω, Tvj = 125°C, LS = 60nH
-
µs
-
µs
-
0,05
-
µs
-
0,05
-
µs
-
0,3
-
µs
-
0,35
-
µs
tf
-
0,05
-
µs
-
0,07
-
µs
Eon
-
7,5
-
mWs
Eoff
-
9
-
mWs
ISC
-
540
-
A
LsCE
-
40
-
nH
RCC‘+EE‘
-
1,0
-
mΩ
min.
typ.
max.
tP ≤ 10µsec, V GE ≤ 15V, R G = 10Ω
TVj≤125°C, V CC=900V, V CEmax=VCES -LsCE ·dI/dt
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse – Chip
module lead resistance, terminals – chip
0,05
0,06
IC = 75A, V CE = 600V
VGE = ±15V, R G = 10Ω, Tvj = 125°C
Kurzschlußverhalten
SC Data
-
IC = 75A, V CE = 600V
VGE = ±15V, R G = 10Ω, Tvj = 25°C
VGE = ±15V, R G = 10Ω, Tvj = 125°C
Fallzeit (induktive Last)
fall time (inductive load)
max.
IC = 75A, V CE = 600V
VGE = ±15V, R G = 10Ω, Tvj = 25°C
VGE = ±15V, R G = 10Ω, Tvj = 125°C
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
typ.
IC = 75A, V CE = 600V
TC=25°C
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
IF = 75A, V GE = 0V, Tvj = 25°C
Rückstromspitze
peak reverse recovery current
IF = 75A, - di F/dt = 2000A/µsec
VF
IF = 75A, V GE = 0V, Tvj = 125°C
VR = 600V, VGE = -15V, T vj = 25°C
IRM
VR = 600V, VGE = -15V, T vj = 125°C
Sperrverzögerungsladung
recovered charge
1,8
2,3
V
1,7
2,2
V
-
85
-
A
-
105
-
A
IF = 75A, - di F/dt = 2000A/µsec
VR = 600V, VGE = -15V, T vj = 25°C
Qr
VR = 600V, VGE = -15V, T vj = 125°C
Abschaltenergie pro Puls
reverse recovery energy
-
-
9
-
µAs
-
16,5
-
µAs
-
3
-
mWs
-
6,2
-
mWs
IF = 75A, - di F/dt = 2000A/µsec
VR = 600V, VGE = -15V, T vj = 25°C
VR = 600V, VGE = -15V, T vj = 125°C
2(8)
Erec
Seriendatenblatt_BSM75GB120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM75GB120DLC
Thermische Eigenschaften / Thermal properties
min.
typ.
max.
-
-
0,18
K/W
-
-
0,5
K/W
RthCK
-
0,05
-
K/W
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Tvj
-
-
150
°C
Betriebstemperatur
operation temperature
Top
-40
-
125
°C
Lagertemperatur
storage temperature
Tstg
-40
-
150
°C
RthJC
Innerer Wärmewiderstand
thermal resistance, junction to case
Transistor / transistor, DC
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
λΠαστε = 1 W/m * K / λgrease = 1 W/m * K
Diode/Diode, DC
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
AL2O3
Kriechstrecke
creepage distance
20
mm
Luftstrecke
clearance
11
mm
CTI
comperative tracking index
275
Anzugsdrehmoment f. mech. Befestigung
mounting torque
terminals M6
M1
3
6
Nm
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
terminals M5
M2
2,5
5
Nm
Gewicht
weight
G
250
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3(8)
Seriendatenblatt_BSM75GB120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM75GB120DLC
Ausgangskennlinie (typisch)
Output characteristic (typical)
IC = f (VCE)
V GE = 15V
150
125
Tj = 25°C
Tj = 125°C
IC [A]
100
75
50
25
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
VCE [V]
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
IC = f (VCE)
T vj = 125°C
150
125
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
100
IC [A]
VGE = 9V
VGE = 7V
75
50
25
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
VCE [V]
4(8)
Seriendatenblatt_BSM75GB120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM75GB120DLC
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
IC = f (VGE)
VCE = 20V
150
125
Tj = 25°C
Tj = 125°C
IC [A]
100
75
50
25
0
5
6
7
8
9
10
11
12
VGE [V]
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
IF = f (VF)
150
125
Tj = 25°C
Tj = 125°C
IF [A]
100
75
50
25
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
VF [V]
5(8)
Seriendatenblatt_BSM75GB120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM75GB120DLC
Schaltverluste (typisch)
Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)
Switching losses (typical) VGE=15V, Rgon = Rgoff =10 Ω , VCE = 600V, T j = 125°C
24
Eoff
20
Eon
Erec
E [mJ]
16
12
8
4
0
0
25
50
75
100
125
150
IC [A]
Schaltverluste (typisch)
Switching losses (typical)
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)
VGE=15V , I C = 75A , VCE = 600V , T j = 125°C
30
Eoff
25
Eon
Erec
E [mJ]
20
15
10
5
0
0
10
20
30
40
50
60
RG [Ω
Ω]
6(8)
Seriendatenblatt_BSM75GB120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM75GB120DLC
Transienter Wärmewiderstand
Transient thermal impedance
ZthJC = f (t)
1
ZthJC
[K / W]
0,1
Zth:Diode
Zth:IGBT
0,01
0,001
0,001
0,01
0,1
1
10
100
t [sec]
1
2
3
4
20,13
60,93
79,4
19,54
i
ri [K/kW] : IGBT
τi [sec] : IGBT
ri [K/kW] : Diode
0,002
0,03
0,066
1,655
65,43
173,31
189,08
72,18
τi [sec] : Diode
0,002
0,03
0,072
0,682
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
VGE = 15V, R g = 10 Ohm, T vj= 125°C
175
150
IC [A]
125
IC,Modul
100
IC,Chip
75
50
25
0
0
200
400
600
800
1000
1200
1400
VCE [V]
7(8)
Seriendatenblatt_BSM75GB120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM75GB120DLC
8(8)
Seriendatenblatt_BSM75GB120DLC.xls
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