SEMICONDUCTOR E35A23VS, E35A23VR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. A3 A2 FEATURES A1 D3 B1 B2 D2 ᴌZener Voltage : 23V(Typ.) D1 ᴌAverage Forward Current : IO=35A. POLARITY C1 E MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING UNIT Average Forward Current IF(AV) 35 A Peak 1 Cycle Surge Current IFSM 450 (50Hz) A IRSM 70 A Peak Revese Over Voltage VRSM 70 V Peak Revese Voltage VRM 17 V Junction Temperature Tj -40ᴕ200 ᴱ Tstg -40ᴕ150 ᴱ Peak Reverse Surge Current (IRSM/2=10ms) Storage Temperature Range DIM A1 A2 A3 B1 B2 C1 C2 D1 G F MILLIMETERS _ 0.3 10.0 + _ 0.3 13.5 + _ 0.5 24.0 + _ 0.3 8.5 + _ 0.3 10.0 + _ 0.3 2.0 + _ 0.3 5.0 + _ 0.3 2.5 + DIM D2 D3 E F G H T C2 (- Type) H (+ Type) E35A23VR T E35A23VS MILLIMETERS _ 0.3 5.0 + _ 0.3 4.5 + _ 0.3 1.9 + _ 0.3 9.0 + _ 0.3 1.0 + _ 0.5 4.4 + _ 0.3 0.6 + MR ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Peak Forward Voltage VFM IFM=100A - - 1.05 V Zener Voltage VZ IZ=10mA 20 23 26 V Repetitive Peak Reverse Curren IRRM VR=VRM - - 10 Ọ A Transient Thermal Resistance IRRM IFM=100A, Pw=100mS - - 90 mV HIR Ta=150ᴱ, VR=VRM - - 2.5 mA - - 5.0 Ọ S - - 1.0 ᴱ/W 200 - - ᴱ - 18 - mV/ᴱ Reverse Leakage Current Under High Temperature Reverse recovery Time Trr Temperature Resistance Rth Thermal runway Temperature Temperature Coefficient 2001. 2. 8 Trwy ề T Revision No : 0 IF=100mA, -IR=100mA 90% Recovery Point DC total junction to case VR=17V, IR=5mA IR=10mA 1/1