Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR2045C Main Product Characteristics General Description High efficiency dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. IF(AV) 2×10A VRRM 45V TJ 150oC VF(max) 0.57V MBR2045C is available in TO-220-3, TO-220-3 (2) and TO-220F-3 packages. Mechanical Characteristics Features · · · · · · · · · · Low Forward Voltage: 0.57V @ 125oC Low Power Loss/High Efficiency 150oC Operating Junction Temperature 20A Total (10A Each Diode Leg) Guard-ring for Stress Protection High Surge Capacity Pb-free Package · · · Applications · · · Case: Epoxy, Molded Epoxy Meets UL 94V-0 @ 0.125in. Weight (Approximately): 1.9Grams (TO-220-3, TO-220-3 (2) and TO-220F-3) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260oC Maximum for 10 Seconds Power Supply Output Rectification Power Management Instrumentation TO-220F-3 TO-220-3 (Optional) TO-220-3 (2) Figure 1. Package Types of MBR2045C Mar. 2011 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR2045C Pin Configuration T Package (TO-220-3 (2)) (TO-220-3) (Optional) 3 A2 3 A2 2 K 2 K 1 A1 1 A1 TF Package (TO-220F-3) 3 A2 2 K 1 A1 Figure 2. Pin Configuration of MBR2045C (Top View) A1 K A2 Figure 3. Internal Structure of MBR2045C Mar. 2011 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR2045C Ordering Information MBR2045C Package Circuit Type E1: Lead Free G1: Green Package T: TO-220-3 (2) TO-220-3 (Optional) TF: TO-220F-3 Blank: Tube Part Number Lead Free TO-220-3 (2) MBR2045CT-E1 TO-220F-3 - Marking ID Green MBR2045CT-G1 MBR2045CTF-E1 MBR2045CTF-G1 Lead Free MBR2045CT-E1 Green MBR2045CT-G1 MBR2045CTF-E1 MBR2045CTF-G1 Packing Type Tube Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Mar. 2011 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR2045C Absolute Maximum Ratings (Each Diode Leg) (Note 1) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR) TC=139oC IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20kHz) TC=137oC IFRM 20 A Non Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Half Wave, Single Phase, 60Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0µs, 1.0kHz) IRRM 1.0 A TJ 150 o Storage Temperature Range TSTG -65 to 150 oC Voltage Rate of Change (Rated VR) dv/dt 10000 V/µs ESD (Machine Model=C) >400 V ESD (Human Body Model=3B) >8000 V Operating Junction Temperature (Note 2) C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/θJA. Thermal Characteristics Parameter Symbol θJC Condition Junction to Case Maximum Thermal Resistance θJA Junction to Ambient Mar. 2011 Rev. 1. 5 Value TO-220-3/ TO-220-3 (2) 2.2 TO-220F-3 4.5 TO-220-3/ TO-220-3 (2) 60 Unit o C/W BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR2045C Electrical Characteristics (Each Diode Leg) Parameter Condition Symbol IF=10A, TC=25oC Maximum Instantaneous Forward IF=10A, TC=125oC Voltage Drop (Note 3) IF=20A, TC=25oC VF IF=20A, TC=125oC Maximum Instantaneous Reverse Current (Note 3) Rated DC Voltage, TC=125oC Rated DC Voltage, TC=25oC Typ Max 0.59 0.65 0.50 0.57 0.71 0.84 0.67 0.72 5 15 0.01 0.1 IR Unit V mA Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%. Mar. 2011 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR2045C Typical Performance Characteristics IF, Instantaneous Forward Current (A) 100 10 1 o 25 C o 125 C o 150 C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, Instantaneous Forward Voltage (V) Figure 4. Typical Forward Voltage 10 1 IR, Reverse Current (mA) 0.1 0.01 o 25 C o 100 C o 125 C o 150 C 1E-3 1E-4 1E-5 1E-6 1E-7 0 10 20 30 40 50 VR, Reverse Voltage (V) Figure 5. Typical Reverse Current Mar. 2011 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR2045C Typical Performance Characteristics (Continued) 1000 Capacitance (pF) 800 600 400 o TJ=25 C 200 0 0 10 20 30 40 VR, Reverse Voltage (V) Figure 6. Capacitance vs. VR, Reverse Voltage IF(AV), Average Foward Current (A) 14 12 10 Square 8 6 4 2 0 100 110 120 130 140 150 160 o Case Temperature ( C) Figure 7. Average Forward Current vs. Case Temperature (Square, Each Diode) Mar. 2011 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR2045C Mechanical Dimensions TO-220-3 Unit: mm(inch) (Optional) 2.580(0.102) 3.380(0.133) 0.550(0.022) 1.350(0.053) 1.160(0.046) 1.760(0.069) 14.230(0.560) 16.510(0.650) φ1.500(0.059) 27.880(1.098) 30.280(1.192) 8.520(0.335) 9.520(0.375) 1.850(0.073) 9.660(0.380) 10.660(0.420) φ3.560(0.140) 4.060(0.160) 3° 0.200(0.008) 7° 3.560(0.140) 4.820(0.190) 2.080(0.082) 2.880(0.113) 7° 0.381(0.015) 60° 0.813(0.032) 8.763(0.345) 60° 0.381(0.015) 2.540(0.100) 2.540(0.100) Mar. 2011 Rev. 1. 5 0.356(0.014) 0.406(0.016) BCD Semiconductor Manufacturing Limited 8 Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR2045C Mechanical Dimensions (Continued) TO-220-3 (2) Unit: mm(inch) 9.800(0.386) 10.200(0.402) ∅ 3.560(0.140) 3.640(0.143) 0.600(0.024) REF 11.100(0.437) REF 1.200(0.047) 1.400(0.055) 1.200(0.047) 1.400(0.055) 6.300(0.248) 6.700(0.264) 1.620(0.064) 1.820(0.072) 9.000(0.354) 9.400(0.370) 3° 4.400(0.173) 4.600(0.181) 2.200(0.087) 2.500(0.098) 3° 0.700(0.028) 0.900(0.035) 2.540(0.100) REF 12.600(0.496) 13.600(0.535) 1.170(0.046) 1.390(0.055) 9.600(0.378) 10.600(0.417) 3.000(0.118) REF 3° 0.400(0.016) 0.600(0.024) 2.540(0.100) REF Mar. 2011 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 9 Data Sheet HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER MBR2045C Mechanical Dimensions (Continued) TO-220F-3 9.700(0.382) 10.300(0.406) ٛ 3.000(0.119) ∅ 3.550(0.140) Unit: mm(inch) 3.000(0.119) 3.400(0.134) 6.900(0.272) 7.100(0.280) 2.350(0.093) 2.900(0.114) 3.370(0.133) 3.900(0.154) 14.700(0.579) 16.000(0.630) 2.790(0.110) 4.500(0.177) 4.300(0.169) 4.900(0.193) 1.000(0.039) 1.400(0.055) 1.100(0.043) 1.500(0.059) 12.500(0.492) 13.500(0.531) 0.550(0.022) 0.900(0.035) 2.540(0.100) 2.540(0.100) Mar. 2011 Rev. 1. 5 0.450(0.018) 0.600(0.024) BCD Semiconductor Manufacturing Limited 10 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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