Jiangsu CJU80N03 N-channel power mosfet Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU80N03
N-Channel Power MOSFET
V(BR)DSS
30V
RDS(on)MAX
ID
6.5m Ω@10V
10mΩ@ 5V
80A
TO-252-2L
DESCRIPTION
The CJU80N03 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be used in a
1. GATE
2. DRAIN
3. SOURCE
wide variety of applications.
FEATURES
z
High density cell design for ultra low RDS(ON)
z
Excellent package for good heat dissipation
z
Fully characterized Avalanche voltage and current
z
Special process technology for high ESD capability
z
Good stability and uniformity with high EAS
z
Uninterruptible Power Supply
APPLICATIONS
z
Power switching application
z
Hard switched and high frequency circuits
MARKING
EQUIVALENT CIRCUIT
CJU80N03= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Limit
Unit
Drain-Source Voltage
Parameter
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
80
A
Pulsed Drain Current
IDM
320
A
306
mJ
PD
1.25
W
RθJA
100
℃/W
Junction Temperature
TJ
150
℃
Storage Temperature Range
Tstg
-55 ~+150
℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
TL
260
℃
Single Pulsed Avalanche Energy
EAS
Power Dissipation
Thermal Resistance from Junction to Ambient
(1)
(1).EAS condition: VDD=20V,L=0.5mH, RG=25Ω, Starting TJ = 25°C
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Ta =25 Я unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V(BR) DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =30V, VGS =0V
1
µA
Gate-body leakage current
IGSS
VDS =0V, VGS =±20V
±100
nA
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =250µA
1.5
3.0
V
Static drain-source on-sate resistance
RDS(on)
VGS =10V, ID =30A
5.1
6.5
mΩ
VGS =5V, ID =24A
7.1
10
mΩ
Off characteristics
Drain-source breakdown voltage
V
30
On characteristics (note1)
Forward transconductance
gFS
VDS =5V, ID =24A
1.0
20
S
Dynamic characteristics (note 2)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
2330
VDS =15V,VGS =0V,
f =1MHz
pF
460
230
Switching characteristics (note 2)
Total gate charge
Qg
51
VDS=10V, VGS=10V,
Gate-source charge
Qgs
Gate-drain charge
Qgd
11
Turn-on delay time
td(on)
20
Turn-on rise time
Turn-off delay time
Turn-off fall time
ID=30A
tr
VDD=15V,ID=30A,
15
td(off)
VGS=10V,RG=2.7Ω
60
tf
nC
14
ns
10
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note1)
Continuous drain-source diode forward
current
Pulsed drain-source diode forward current
VSD
VGS =0V, IS=24A
1.2
V
IS
80
A
ISM
320
A
Notes:
1.
Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
2.
Guaranteed by design, not subject to production.
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Typical Characteristics
Transfer Characteristics
Output Characteristics
100
VGS=4.5V,5V
100
Ta=25℃
VGS=4.3V
VDS=5V
Pulsed
Pulsed
(A)
80
(A)
80
ID
60
DRAIN CURRENT
DRAIN CURRENT
ID
VGS=4V
VGS=3.8V
40
60
40
Ta=25℃
VGS= 3.5V
20
0
20
0
1
2
3
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
4
VDS
0
5
0
2
(V)
4
GATE TO SOURCE VOLTAGE
6
VGS
(V)
RDS(ON)—— VGS
ID
10
30
Ta=25℃
Pulsed
(m)
6
VGS=5V
RDS(ON)
RDS(ON)
7
Pulsed
ID=25A
25
ON-RESISTANCE
(m)
8
ON-RESISTANCE
9
5
VGS=10V
4
20
Ta=100℃
15
10
5
Ta=25℃
3
2
5
10
20
15
DRAIN CURRENT
ID
25
0
30
3
(A)
4
5
6
7
8
GATE TO SOURCE VOLTAGE
VGS
9
10
(V)
Threshold Voltage
IS —— VSD
2.5
100
Pulsed
2.0
VTH
1
Ta=100℃
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
(V)
10
Ta=25℃
0.1
0.01
1E-3
0.0
0.2
0.4
0.6
0.8
SOURCE TO DRAIN VOLTAGE
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1.0
1.2
1.0
0.5
0.0
25
1.4
VSD (V)
ID=250uA
1.5
50
75
JUNCTION TEMPERATURE
3
100
TJ
125
( ℃)
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Symbol
A
A1
B
b
c
c1
D
D1
E
e
e1
M
N
L
L1
L2
V
ĭ
Dimensions In Millimeters
Max.
Min.
2.380
2.200
0.000
0.100
0.800
1.400
0.710
0.810
0.460
0.560
0.460
0.560
6.500
6.700
5.130
5.460
6.000
6.200
2.286 TYP.
4.327
4.727
1.778REF.
0.762REF.
9.800
10.400
2.9REF.
1.400
1.700
4.830 REF.
Dimensions In Inches
Min.
Max.
0.087
0.094
0.000
0.004
0.031
0.055
0.028
0.032
0.018
0.022
0.018
0.022
0.256
0.264
0.202
0.215
0.236
0.244
0.090 TYP.
0.170
0.186
0.070REF.
0.018REF.
0.386
0.409
0.114REF.
0.055
0.067
0.190 REF.
72 5 /6XJJHVWHG3DG/D\RXW
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