SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSS71 • High Voltage • Hermetic TO-18 Metal package. • Ideally suited for High Voltage Amplifier and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 200V 200V 6V 500mA 500mW 2.86mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Min. Typ. Max. Units 350 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8576 Issue 1 Page 1 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSS71 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions IC = 10mA IB = 0 200 IC = 100µA IE = 0 200 V(BR)EBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage IE = 100µA IC = 0 6 ICBO Collector Cut-Off Current VCB = 150V IE = 0 50 ICEO Collector Cut-Off Current VCE = 150V IB = 0 500 IEBO Emitter Cut-Off Current VEB = 5V IC = 0 50 IC = 0.1mA VCE = 1.0V 20 IC = 1.0mA VCE = 10V 30 IC = 10mA VCE = 10V 50 IC = 30mA VCE = 10V 40 IC = 10mA IB = 1.0mA 0.3 IC = 30mA IB = 3mA 0.4 IC = 50mA IB = 5mA 0.5 IC = 10mA IB = 1.0mA 0.8 IC = 30mA IB = 3mA 0.9 IC = 50mA IB = 5mA 1.0 IC = 20mA VCE = 20V (1) V(BR)CEO V(BR)CBO hFE Forward-current transfer ratio (1) (1) VCE(sat) VBE(sat) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Min. Typ Max. Units V nA 250 V DYNAMIC CHARACTERISTICS fT Transition Frequency Cobo Output Capacitance 200 VCB = 20V IE = 0 MHz 3.5 f = 1.0MHz Cibo Input Capacitance ton Turn-On Time toff 50 f = 20MHz VEB = 0.5V pF IC = 0 45 f = 1.0MHz Turn-Off Time IC = 50mA VCC = 100V IB1 = 10mA IC = 50mA VCC = 100V IB1 = - IB2 = 10mA 100 ns 400 Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8576 Issue 1 Page 2 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSS71 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 1 2 TO-18 (TO-206AA) METAL PACKAGE Underside View Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8576 Issue 1 Page 3 of 3