CYSTEKEC MTB280A15Q8 Dual n-channel enhancement mode power mosfet Datasheet

Spec. No. : C874Q8
Issued Date : 2017.04.07
Revised Date :
Page No. : 1/9
CYStech Electronics Corp.
Dual N-Channel Enhancement Mode Power MOSFET
MTB280A15Q8
Features
BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TA=70°C
RDSON@VGS=10V, ID=1.5A
RDSON@VGS=4.5V, ID=1A
150V
1.5A
1.2A
283mΩ(typ)
291mΩ(typ)
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Dual N-ch MOSFET package
• Pb-free lead plating & Halogen-free package
Equivalent Circuit
Outline
SOP-8
MTB280A15Q8
D2
D2
D1
D1
G:Gate
S:Source
D:Drain
Pin 1
S1
G1
S2
G2
Ordering Information
Device
MTB280A15Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB280A15Q8
Preliminary
CYStek Product Specification
Spec. No. : C874Q8
Issued Date : 2017.04.07
Revised Date :
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
VDS
VGS
150
±20
2.6
1.6
1.5
1.2
10
2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
ID
IDM
Power Dissipation for Dual Operation
PD
Power Dissipation for Single Operation
Operating Junction and Storage Temperature Range
Unit
V
A
(Note 2)
(Note 2)
(Note 1)
W
1.6 (Note 2)
0.9 (Note 3)
Tj, Tstg
°C
-55~+150
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, dual
Thermal Resistance, Junction-to-ambient, max , single
operation
Symbol
RθJC
RθJA
Value
25
62.5
78 (Note 2)
135 (Note 3)
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s.
3. Surface mounted on minimum copper pad, pulse width≤10s.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
BVDSS
VGS(th)
GFS
IGSS
150
1
-
3.9
283
291
2.5
±100
1
10
360
400
-
9.1
1.2
2.6
6
16.4
21.6
15.6
13.7
9
24.6
32.4
23.4
Unit
Test Conditions
Static
*1
IDSS
RDS(ON)
*1
V
S
nA
μA
mΩ
VGS=0V, ID=250μA
VDS =VGS, ID=250μA
VDS =10V, ID=1A
VGS=±20V, VDS=0V
VDS =150V, VGS =0V
VDS =120V, VGS =0V, Tj=70°C
VGS =10V, ID=1.5A
VGS =4.5V, ID=1A
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
MTB280A15Q8
nC
VDS=120V, ID=1.5A, VGS=10V
ns
VDS=75V, ID=1.5A, VGS=10V,
RG=6Ω
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Ciss
Coss
Crss
Rg
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr *1
Qrr *1
-
313
32
17
4.4
470
48
26
-
-
0.79
26.9
33.6
1.6
10
1.2
-
Spec. No. : C874Q8
Issued Date : 2017.04.07
Revised Date :
Page No. : 3/9
pF
VGS=0V, VDS=50V, f=1MHz
Ω
f=1MHz
A
V
ns
nC
IS=1.5A, VGS=0V
IF=1.5A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
MTB280A15Q8
Preliminary
CYStek Product Specification
Spec. No. : C874Q8
Issued Date : 2017.04.07
Revised Date :
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
10V
9V
8V
7V
6V
5V
4V
ID, Drain Current(A)
8
6
BVDSS, Normalized Drain-Source
Breakdown Voltage
10
VGS=3.5V
4
VGS=3V
2
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
VGS=2.5V
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1000
VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
1.2
VGS=4.5V
VGS=10V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
0.2
100
0.01
0.1
1
ID, Drain Current(A)
0
10
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
2.5
450
400
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=1.5A
350
300
250
200
ID=1A
150
100
50
VGS=10V, ID=1.5A
2
1.5
1
0.5
RDS(ON) @Tj=25°C : 283mΩ typ
0
0
0
MTB280A15Q8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C874Q8
Issued Date : 2017.04.07
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
NormalizedThreshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
100
C oss
Crss
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
10
0
1.4
10
20
30
40
50
60
VDS, Drain-Source Voltage(V)
70
-75 -50 -25
80
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
VDS=75V
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
10
1
0.1
VDS=10V
Pulsed
Ta=25°C
8
VDS=30V
6
4
VDS=120V
2
ID=1.5A
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
0
10
2
10
4
6
8
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
2
10
RDS(ON)
Limited
1
100μs
1ms
10ms
100ms
0.1
1s
TA=25°C, Tj=150°, VGS=10V
RθJA=78°C/W, Single Pulse
0.01
DC
ID, Maximum Drain Current(A)
100
ID, Drain Current(A)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1.5
1
0.5
VGS=10V, RθJA=78°C/W
0
0.001
0.01
MTB280A15Q8
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
Preliminary
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C874Q8
Issued Date : 2017.04.07
Revised Date :
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Maximum Power Dissipation
(Please see Note on page 2)
10
300
VDS=10V
270
ID, Drain Current (A)
8
240
TJ(MAX) =150°C
TA=25°C
RθJA=78°C/W
210
Power (W)
6
4
180
150
120
90
2
60
30
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
0
0.0001
0.001
0.01
0.1
Pulse Width(s)
1
10
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=78 ° C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTB280A15Q8
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
Preliminary
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C874Q8
Issued Date : 2017.04.07
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB280A15Q8
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C874Q8
Issued Date : 2017.04.07
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note :1. All temperatures refer to topside of the package, measured on the package body surface.
2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care
should be taken to match the coefficients of thermal expansion between components and PCB. If they are
not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly
cools.
MTB280A15Q8
Preliminary
CYStek Product Specification
Spec. No. : C874Q8
Issued Date : 2017.04.07
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Marking:
Device Name
B280
A15
Date Code
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
Millimeters
Min.
Max.
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.700
5.100
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.053
0.069
0.004
0.010
0.053
0.061
0.013
0.020
0.006
0.010
0.185
0.200
DIM
E
E1
e
L
θ
Millimeters
Min.
Max.
3.800
4.000
5.800
6.200
1.270 (BSC)
0.400
1.270
8°
0
Inches
Min.
Max.
0.150
0.157
0.228
0.244
0.050 (BSC)
0.016
0.050
8°
0
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB280A15Q8
Preliminary
CYStek Product Specification
Similar pages