AP20T15GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Product G BVDSS 150V RDS(ON) 70mΩ ID 22.2A S Description AP20T15 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercial-industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. G TO-220(P) D S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 22.2 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 14 A 60 A 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 89.2 W PD@TA=25℃ Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.4 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data and specifications subject to change without notice 1 201303122 AP20T15GP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 150 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=15A - - 70 mΩ VGS=4.5V, ID=10A - - 120 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=15A - 21 - S IDSS Drain-Source Leakage Current VDS=120V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=15A - 48 77 nC Qgs Gate-Source Charge VDS=120V - 7.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 18 - nC td(on) Turn-on Delay Time VDS=75V - 12 - ns tr Rise Time ID=15A - 30 - ns td(off) Turn-off Delay Time RG=3.3Ω - 33 - ns tf Fall Time VGS=10V - 40 - ns Ciss Input Capacitance VGS=0V - 2100 3360 pF Coss Output Capacitance VDS=25V - 125 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 100 - pF Rg Gate Resistance f=1.0MHz - 1.7 3.4 Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=15A, VGS=0V - - 1.3 V trr Reverse Recovery Time IS=10A, VGS=0V - 40 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 80 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP20T15GP-HF 60 30 T C = 25 o C ID , Drain Current (A) 50 ID , Drain Current (A) T C = 150 o C 10V 7.0V 6.0V 5.0V 40 30 20 V G = 4.0V 10V 7.0V 6.0V 5.0V V G = 4.0V 20 10 10 0 0 0 4 8 12 16 0 20 Fig 1. Typical Output Characteristics 4 6 8 10 12 Fig 2. Typical Output Characteristics 90 3.2 I D =15A V G =10V I D =10A o Normalized RDS(ON) T C =25 C RDS(ON) (mΩ) 2 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 80 70 60 2.4 1.6 0.8 50 0.0 2 4 6 8 10 -50 0 50 100 150 o V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 20 I D =250uA 1.6 12 T j =150 o C Normalized VGS(th) IS(A) 16 T j =25 o C 8 1.2 0.8 0.4 4 0.0 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP20T15GP-HF f=1.0MHz 3200 12 10 2400 8 C iss C (pF) VGS , Gate to Source Voltage (V) I D =15A V DS =120V 6 1600 4 800 2 C oss C rss 0 0 0 10 20 30 40 50 1 60 5 Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthjc) 1 Operation in this area limited by RDS(ON) 100us ID (A) 9 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 10 1ms 10ms 100ms DC 1 o T C =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 0.1 1 10 100 1000 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 32 ID , Drain Current (A) VG 24 QG 10V QGS 16 QGD 8 Charge Q 0 25 50 75 100 T C , Case Temperature ( 125 o 150 C) Fig 11. Maximum Continuous Drain Current v.s. Case Temperature Fig 12. Gate Charge Waveform 4