AO6702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO6702 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6702 is Pb-free (meets ROHS & Sony 259 specifications). AO6702L is a Green Product ordering option. AO6702 and AO6702L are electrically identical. VDS (V) = 20V ID = 3.8A (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 65mΩ (VGS = 2.5V) RDS(ON) < 95mΩ (VGS = 1.8V) SCHOTTKY VDS (V) = 20V, IF = 1A, VF<[email protected] A S G 1 6 2 5 3 4 K N/C D D K S A G TSOP6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C B IDM VKA Schottky reverse voltage TA=25°C Continuous Forward Current Pulsed Forward Current ID A TA=70°C B MOSFET TA=70°C Power Dissipation V ±8 3.8 V 3 A 10 IF Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics Schottky Steady-State Steady-State Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient Maximum Junction-to-Lead C A Steady-State Steady-State PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL Units 20 IFM TA=25°C Schottky 20 2 V 1 A 1.15 10 0.92 0.7 0.59 -55 to 150 -55 to 150 °C Typ Max Units 80.3 110 117 43 150 80 109.4 135 136.5 58.5 175 80 W °C/W °C/W AO6702 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS=±8V Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 10 100 VGS=4.5V, ID=3.8A VGS=2.5V, ID=3.3A 54 65 mΩ VGS=1.8V, ID=2.8A 74 95 mΩ VDS=5V, ID=3.8A DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge V A 80 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Crss nA 50 Forward Transconductance Output Capacitance 1 63 gFS Coss 0.6 µA 41.6 TJ=125°C VSD IS Units V 1 VGS(th) Static Drain-Source On-Resistance Max 20 VDS=16V, VGS=0V IGSS RDS(ON) Typ 10.5 0.8 S 1 V 1.8 A 449 VGS=0V, VDS=10V, f=1MHz mΩ pF 74 pF 51.6 pF VGS=0V, VDS=0V, f=1MHz 4.9 Ω 5.9 nC VGS=4.5V, VDS=10V, ID=3.8A 0.36 nC nC Qgd Gate Drain Charge 1.3 tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time 6 ns tD(off) Turn-Off DelayTime 32.7 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge SCHOTTKY PARAMETERS VF Forward Voltage Drop Irm Maximum reverse leakage current CT Junction Capacitance trr Qrr VGS=5V, VDS=10V, RL=2.6Ω, RGEN=0Ω 7.1 ns IF=3.8A, dI/dt=100A/µs 13 IF=3.8A, dI/dt=100A/µs 3.3 ns nC IF=0.5A 0.39 0.5 0.02 VR=16V VR=16V, TJ=125°C 20 SchottkyReverse Recovery Time VR=10V IF=1A, dI/dt=100A/µs 5.2 34 Schottky Reverse Recovery Charge IF=1A, dI/dt=100A/µs 0.8 V mA pF 10 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO6702 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 16 8V VGS=5V VGS =2.0V 8 25°C 125°C 6 8 ID(A) ID(A) 12 VGS =1.5V 4 4 2 VGS =1.0V 0 0 0 1 2 3 4 5 0.0 0.5 VDS(Volts) 1.5 2.0 2.5 VGS(Volts) Figure 2: Transfer Characteristics Figure 1: On-Regions Characteristi cs 1.6 90 ID=3.8A Normalize ON-Resistance VGS =1.8V 80 RDS(ON)(mΩ) 1.0 70 VGS =2.5V 60 50 40 VGS =4.5V 1.4 VGS=1.8V VGS=2.5V 1.2 VGS=4.5V 1.0 30 0 2 4 6 8 10 0.8 0 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 90 1E+01 80 1E+00 70 1E-01 60 IS(A) RDS(ON)(mΩ) 125°C 125°C 1E-02 1E-03 50 40 1E-04 25°C 25°C 1E-05 30 0 2 4 6 8 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 VSD(Volts) Figure 6: Body-Diode Characteristics 1.0 AO6702 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6 800 VDS=4.5V ID=3.8A 700 Capacitance (pF ) VGS(Volt s) 5 4 3 2 1 600 Ciss 500 400 Crss 300 200 100 Coss 0 0 0 1 2 3 4 5 6 0 7 RDS(ON) limited 15 20 10 10µs 100µs 0.1s 1ms 1s 1 10s TJ(Max) =150°C TA =25°C 0.1 Power (W) ID(A) 10 10ms 8 6 4 2 DC 0 1 10 100 0.001 VDS(Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ZθJA Normalized Transient Thermal Resistance 10 12 100 0.1 5 VDS(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 Pulse 0.00001 Single0.0001 0.001 0.01 0.1 1 10 Pulse Width (S) Figure 11: Normalized Maximum Transient Thermal Impedence Alpha & Omega Semiconductor, Ltd. T 100 1000 AO6702 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 100 1.0E+01 125°C f = 1MHz 80 Capacitance (pF) IF (Amps) 1.0E+00 1.0E-01 1.0E-02 60 40 20 25°C 1.0E-03 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 0 VF (Volts) Figure 12: Schottky Forward Characteristics 10 15 20 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 0.5 Leakage Current (A) 1.0E-02 0.4 VF (Volts) 5 IF=0.5A 0.3 0.2 1.0E-03 VR=16V 1.0E-04 1.0E-05 1.0E-06 0.1 0 25 50 75 100 Temperature (°C) 125 0 150 25 50 75 100 125 150 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=135°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000