BD034 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-126 High Current High Transition Frequency 1Emitter 2Collector 3Base CLASSIFICATION OF hFE Product-Rank BD034-R Range BD034-S 100~200 A BD034-T 140~280 B E F 200~400 C N L H M K D J G REF. A B C D E F G Millimeter Min. Max. 7.40 7.80 2.50 2.90 10.60 11.00 15.30 15.70 3.70 3.90 3.90 4.10 2.29 TYP. REF. H J K L M N Millimeter Min. Max. 1.10 1.50 0.45 0.60 0.66 0.86 2.10 2.30 1.17 1.37 3.00 3.20 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector - Base Voltage VCBO -110 V Collector - Emitter Voltage VCEO -95 V Emitter - Base Voltage VEBO -7 Collector Current -Continuous IC -2.5 V A Collector Power Dissipation PC 1.25 W Maximum Junction to Ambient RθJA 100 °C / W Junction, Storage Temperature TJ, TSTG 150, -55 ~ 150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit V(BR)CBO -110 - - V IC= -0.1mA, IE=0 VCEO(SUS) -95 - - V IC= -10mA, IB=0 V(BR)EBO -7 - - V IC=0, IE= -0.1mA Collector Cut - Off Current ICBO - - -1 µA VCB= -100V, IE= 0 Emitter Cut-Off Current IEBO - - -1 µA VEB= -5V, IC= 0 100 - 400 Collector - Base Breakdown Voltage Collector-emitter sustaining voltage 1 Emitter - Base Breakdown Voltage DC Current Gain 1 hFE Collector - Emitter Saturation Voltage Base – Emitter Voltage Transition frequency http://www.SeCoSGmbH.com/ 28-Jan-2014 Rev. A 1 1 Test Conditions VCE= -2V, IC= -100mA 40 - - VCE(sat) - - -0.5 V IC= -2A, IB = -200mA VCE= -2V, IC= -1.5mA VBE - - -1 V VCE= -5V, IC= -500mA fT 3 - - MHz VCE= -1V, IC= -250mA, f=1MHz Any changes of specification will not be informed individually. Page 1 of 1