DHG 30 IM 600 PC advanced V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 30 A 35 ns Part number DHG 30 IM 600 PC 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Housing: TO-263 (D2Pak) Conditions ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2008 IXYS all rights reserved typ. max. Unit 600 V VR = 600 V 50 µA VR = 600 V TVJ = 125 °C 5 mA TVJ = 25 °C 2.37 V 3.18 V 2.22 V 3.11 V TC = 95°C 30 A TVJ = 150°C 1.31 V IF = 30 A IF = 60 A IF = 30 A IF = 60 A rectangular TVJ = 150 °C d = 0.5 for power loss calculation only RthJC t rr min. TVJ = 25 °C TVJ = 25 °C -55 29.2 mΩ 0.60 K/W 150 °C TC = 25 °C 210 W t = 10 ms (50 Hz), sine TVJ = 45°C 200 A TVJ = 25 °C 12 A IF = TVJ = tbd A 35 A; VR = 400 V -di F /dt = 600 A/µs VR = 400 V; f = 1 MHz °C TVJ = 25 °C 35 ns TVJ = °C tbd ns TVJ = 25 °C 16 pF Data according to IEC 60747and per diode unless otherwise specified 20081031 DHG 30 IM 600 PC advanced Ratings Symbol Definition min. Conditions I RMS RMS current RthCH thermal resistance case to heatsink Tstg storage temperature per pin 1) max. Unit 35 0.25 -55 Weight FC typ. 1) A K/W 150 °C 2 20 mounting force with clip g 60 N IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part number Part No. Logo XXXXXXXXX D H G 30 IM 600 PC IXYS yww Date Code Order Code abcd Ordering Standard Part Name DHG 30 IM 600 PC Similar Part DHG30I600PA DHG30I600HA IXYS reserves the right to change limits, conditions and dimensions. © 2008 IXYS all rights reserved Marking on Product DHG30IM600PC Package TO-220 TO-247 Delivering Mode Tape & Reel = = = = = = = Diode Sonic Fast Recovery Diode extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-263AB (D2Pak) (2) Base Qty Code Key 800 503501 Voltage Class 600 600 Data according to IEC 60747and per diode unless otherwise specified 20081031 DHG 30 IM 600 PC advanced Outlines TO-263 (D2Pak) Dim. A A1 Millimeter Inches min max min max 4.06 4.83 0.160 0.190 typ. 0.10 typ. 0.004 b 0.51 0.99 0.020 0.039 b2 1.14 1.40 0.045 0.055 c 0.40 0.74 0.016 0.029 c2 1.14 1.40 0.045 0.029 D 8.38 9.40 0.330 0.370 D1 8.00 8.89 0.315 0.350 E 9.65 10.41 0.380 0.410 E1 e 6.22 8.13 2,54 BSC 0.245 0.320 0,100 BSC H 14.61 15.88 0.575 L 1.78 2.79 0.070 0.110 L1 1.02 1.68 0.040 0.066 0.625 L2 1.02 1.52 0.040 0.060 typ. typ. 0.040 0.0016 0.02 0.0008 All dimensions conform with and/or are within JEDEC standard. W IXYS reserves the right to change limits, conditions and dimensions. © 2008 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20081031