AOL1440 N-Channel Enhancement Mode Field Effect Transistor General Description Features Features The AOL1440 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOL1440 is Pb-free (meets ROHS & Sony 259 specifications). AOL1440L is a Green Product ordering option. AOL1440 and AOL1440L are electrically identical. VVDS (V)==25V 25V DS (V) 75A(V (VGS 10V) IIDD ==75A GS == 10V) < < 3.2mΩ 3.2mΩ (V (VGS 20V) RRDS(ON) DS(ON) GS == 20V) 4.0mW(V (VGS 10V) RRDS(ON) DS(ON) << 4.0mΩ GS==12V) 5.2mW(V (VGS 12V) RRDS(ON) DS(ON)<< 5.2mΩ GS==10V) Ultra SO-8TM Top View UISTested Tested UIS Rg,Ciss,Coss,CrssTested Tested Rg,Ciss,Coss,Crss Fits SOIC8 footprint ! D D S Bottom tab connected to drain G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage 25 VDS ±30 Gate-Source Voltage VGS Continuous Drain Current B,G, Pulsed Drain Current Continuous Drain G Current TC=25°C G TC=100°C Units V V 85 B A IDSM 66 200 25 20 IAR 30 A 135 75 37 5 3 -55 to 175 mJ ID IDM TA=25°C TA=70°C Avalanche Current C C Repetitive avalanche energy L=0.3mH EAR TC=25°C PD Power Dissipation B TC=100°C TA=25°C PDSM A Power Dissipation TA=70°C Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter t ≤ 10s Maximum Junction-to-AmbientA A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Case Alpha & Omega Semiconductor, Ltd. Symbol RθJA RθJC Typ 19 45 1.5 A W W °C Max 25 55 2 Units °C/W °C/W °C/W www.aosmd.com AOL1440 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance Conditions Min ID=250µA, VGS=0V VDS=20V, V GS=0V 25 VDS=0V, VGS= ±30V VDS=VGS ID=250µA VGS=12V, V DS=5V VGS=20V, ID=20A VGS=12V, ID=20A VGS=10V, ID=20A 2 200 Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,V GS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(12V) Total Gate Charge Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Max 0.005 1 5 100 4 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, V DS=12.5V, ID=20A VGS=10V, V DS=12.5V, R L=0.68Ω, RGEN=3Ω IF=20A, dI/dt=100A/µs IF=20A, dI/dt=100A/µs Units V TJ=55°C TJ=125°C gFS VSD IS Typ 3 2.7 3.5 4 5.6 75 0.7 3.2 4 5.2 2100 850 400 0.35 2400 40 33 11 14 12 19 15 8.5 42 34 50 µA nA V A mΩ mΩ mΩ S V A 1 55 1 pF pF pF Ω nC nC nC nC ns ns ns ns ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev0. July 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 100 20V VDS=5V 160 80 12V 10V 120 60 ID(A) ID(A) VGS=8V 80 40 40 20 0 0 1 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 25°C 0 5 3 4.5 5 6 7 VGS(Volts) Figure 2: Transfer Characteristics ID=20A Normalized On-Resistance 4.0 VGS=12V 3.5 3.0 VGS=20V 2.5 2.0 8 VGS=20V 1.2 VGS=12V VGS=10V 1 VGS=10V VGS=12V 0.8 VGS=20V 0.6 0 5 10 15 20 25 30 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 14 1.0E+02 ID=20A 1.0E+01 12 125°C 1.0E+00 IS (A) 10 RDS(ON) (mΩ) 4 1.4 VGS=10V RDS(ON) (mΩ) 125°C TC=100°C TA=25°C 125°C 8 6 1.0E-01 1.0E-02 25°C 1.0E-03 25°C -55 to 175 4 1.0E-04 1.0E-05 2 6 8 10 12 14 16 18 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 www.aosmd.com AOL1440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 20 VDS=12.5V ID=20A Capacitance (pF) VGS (Volts) 16 Ciss 2500 12 8 4 2000 1500 Coss 1000 Crss 500 0 0 10 0 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000.0 200 ID (Amps) 100.0 10µs 100µ RDS(ON) limited Power (W) 1.0 0.1 0.0 0.01 TJ(Max)=175°C TC=25°C 0.1 ZθJC Normalized Transient Thermal Resistance 100 50 1 VDS (Volts) 10 100 D=Ton/T TJ,PK=Tc+PDM.ZθJC.RθJC RθJC=2°C/W 0 0.0001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 150 DC 10.0 TJ(Max)=175°C TC=25°C 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 TC=100°C TA=25°C PD 0.1 -55 to 175 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 TA=25°C 70 80 Power Dissipation (W) ID(A), Peak Avalanche Current 100 25°C 60 40 150°C 20 0 0.00001 60 50 40 30 20 10 0 0.0001 0.001 0 25 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 100 125 150 175 100 80 80 60 Power (W) Current rating ID(A) 75 TCASE (°C) Figure 13: Power De-rating (Note B) 100 40 20 60 40 20 0 0 25 50 75 100 125 150 0 0.01 175 TCASE (°C) Figure 14: Current De-rating (Note B) 10 ZθJA Normalized Transient Thermal Resistance 50 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com