CM400C1Y-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual (AC Switch) IGBT S-Series Module 350 Amperes/1200 Volts A D L (4 PLACES) K K K V G C2E1 G2 E2 C1 E2 B E H N J E1 G1 M (3 PLACES) F G Q P Q P Description: Powerex Dual IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. X Z F Y U V P AA AB (TAB #110) W S C T LABEL R G2 E2 (Es2) Di1 Tr2 C2E1 E2 Tr1 Di2 C1 Tolerance Otherwise Specified Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 E1 (Es1) G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.33 110.0 Q 0.28 7.0 B 3.15 80.0 R 0.84 21.2 C 1.14+0.04/-0.02 29.0+1.0/-0.5 S 0.33 8.5 D 3.66±0.01 93.0±0.25 T 1.10 28.0 E 2.44±0.01 62.0±0.25 U 0.16 4.0 25.0 V 0.11 2.8 F 0.98 G 0.24 6.0 W 0.29 7.5 H 0.59 15.0 X 0.21 5.3 J 0.81 20.5 Y 0.26 6.7 K 0.55 14.0 Z 0.85 21.5 12.0 L 0.26 Dia. 6.5 Dia. AA 0.47 M M6 Metric M6 AB t = 0.02 N 1.18 P 12/12 Rev. 0 0.71 30.0 18.0 t = 0.5 Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ UPS £ Welding Power Supplies £ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM400C1Y-24S is a 1200V (VCES), 350 Ampere Dual AC Switch IGBT Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 350 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM400C1Y-24S Dual (AC Switch) IGBT S-Series Module 350 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol Rating Units Collector-Emitter Voltage (G-E Short-Circuited) VCES 1200 Volts Gate-Emitter Voltage (C-E Short-Circuited) VGES ±20 Volts Collector Current (DC, TC = 124°C)*2,*4 IC 350 Amperes Collector Current (Pulse, Repetitive)*3 ICRM 800 Amperes Ptot 2670 Watts Total Power Dissipation (TC = 25°C)*2,*4 *1 Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) Maximum Junction Temperature Maximum Case Temperature*2 Operating Junction Temperature 24.6 37.8 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. 0 Storage Temperature 350 Amperes IERM*1 800 Amperes VISO 2500 Volts Tj(max) 175 °C TC(max) 125 °C Tj(opr) -40 to +150 °C Tstg -40 to +125 °C 79.0 IE Emitter Current (Pulse, Repetitive)*3 65.8 Emitter Current*2,*4 0 0 30.7 Tr2 Tr2 44.2 Di2 Di2 Di1 Tr1 35.3 Di1 Tr1 48.8 LABEL SIDE Tr1/Tr2: IGBT 2 Di1/Di2: FWDi 12/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM400C1Y-24S Dual (AC Switch) IGBT S-Series Module 350 Amperes/1200 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES VCE = VCES, G-E Short-Circuited — — 1 mA Gate-Emitter Leakage Current IGES VGE = VGES, C-E Short-Circuited — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 40mA, VCE = 10V 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 400A, VGE = 15V, Tj = 25°C*5 — 1.85 2.30 Volts (Terminal) IC = 400A, VGE = 15V, Tj = 125°C*5 — 2.05 — Volts IC = 400A, VGE = 15V, Tj = 150°C*5 — 2.10 — Volts 25°C*5 — 1.70 2.15 Volts IC = 400A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts 150°C*5 — 1.95 — Volts — — 40 nF — — 8.0 nF — — 0.66 nF — 934 — nC — — 800 ns Collector-Emitter Saturation Voltage VCE(sat) (Chip) IC = 400A, VGE = 15V, Tj = IC = 400A, VGE = 15V, Tj = Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Emitter-Collector Voltage Emitter-Collector Voltage QG VCE = 10V, G-E Short-Circuited VCC = 600V, IC = 400A, VGE = 15V td(on) tr VCC = 600V, IC = 400A, VGE = ±15V, — — 200 ns td(off) RG = 0Ω, Inductive Load — — 600 ns tf — 300 ns — 1.85 2.30 Volts IE = 400A, VGE = 0V, Tj = 25°C*5 (Terminal) IE = 400A, VGE = 0V, Tj = 125°C*5 — 1.85 — Volts IE = 400A, VGE = 0V, Tj = 150°C*5 — 1.85 — Volts VEC*1 IE = 400A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts (Chip) IE = 400A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts IE = 400A, VGE = 0V, Tj = Reverse Recovery Time — VEC*1 trr*1 — 1.70 — Volts VCC = 600V, IE = 400A, VGE = ±15V — — 300 ns *1 Reverse Recovery Charge Qrr Turn-on Switching Energy per Pulse Eon 150°C*5 RG = 0Ω, Inductive Load — 21.4 — µC VCC = 600V, IC = IE = 400A, — 39.8 — mJ Turn-off Switching Energy per Pulse Eoff VGE = ±15V, RG = 0Ω, — 44.9 — mJ Reverse Recovery Energy per Pulse Err*1 Tj = 150°C, Inductive Load — 35.2 — mJ rg Per Switch — 4.9 — Ω Internal Gate Resistance *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. 12/12 Rev. 0 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM400C1Y-24S Dual (AC Switch) IGBT S-Series Module 350 Amperes/1200 Volts Thermal Resistance Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case*2 Rth(j-c)Q Per IGBT — — 56 K/kW Case*2 Rth(j-c)D Per IFWDi — — 95 K/kW Rth(c-s) Thermal Grease Applied — 18 — K/kW Test Conditions Min. Typ. Max. Units Mt Main Terminals, M6 Screw 31 35 40 in-lb Ms Mounting to Heatsink, M6 Screw 31 35 40 in-lb — 580 — Grams On Centerline X, Y*7 -100 — +100 µm Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Contact Thermal Resistance, Case to Heatsink*2 (Per 1/2 Module)*6 Mechanical Characteristics Characteristics Symbol Mounting Torque Weight m Flatness of Baseplate ec Recommended Operating Conditons, Ta = 25°C Symbol — 600 850 Volts 13.5 15.0 16.5 Volts RG Per Switch 0 — 10 Ω – CONCAVE + CONVEX *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. 79.0 Applied Across C1-E2 Applied Across G1-Es1 / G2-Es2 65.8 External Gate Resistance VCC VGE(on) 24.6 Gate (-Emitter Drive) Voltage 37.8 (DC) Supply Voltage 0 Characteristics 0 0 30.7 Tr2 Tr2 44.2 Di2 Di2 Di1 Tr1 35.3 Di1 Tr1 48.8 Y X 3 mm LABEL SIDE BOTTOM Tr1/Tr2: IGBT Di1/Di2: FWDi – CONCAVE BOTTOM LABEL SIDE BOTTOM 4 + CONVEX 12/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM400C1Y-24S Dual (AC Switch) IGBT S-Series Module 350 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) OUTPUT CHARACTERISTICS (CHIP - TYPICAL) 800 3.5 600 12 13.5 15 500 11 400 300 10 200 9 100 0 Tj = 25°C 0 2 4 6 8 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 2.5 2.0 1.5 1.0 0.5 0 100 200 300 400 500 600 700 800 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (CHIP - TYPICAL) 103 10 Tj = 25°C 8 IC = 800A 6 IC = 400A 4 IC = 160A 2 0 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 12/12 Rev. 0 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C 3.0 0 10 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 700 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V 20 Tj = 25°C Tj = 125°C Tj = 150°C 102 101 0 0.5 1.0 1.5 2.0 2.5 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM400C1Y-24S Dual (AC Switch) IGBT S-Series Module 350 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 td(off) Cies td(on) SWITCHING TIME, (ns) CAPACITANCE, Cies, Coes, Cres, (nF) 102 101 Coes 100 tf tr 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load Cres VGE = 0V 10-1 10-1 100 101 102 101 101 102 103 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) 103 103 td(off) 104 tf tr 102 101 101 COLLECTOR CURRENT, IC, (AMPERES) 6 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load 102 tf 103 103 VCC = 600V VGE = ±15V IC = 400A Tj = 125°C Inductive Load td(on) tr 101 10-1 100 101 SWITCHING TIME, td(on), tr (ns) SWITCHING TIME, (ns) td(on) SWITCHING TIME, td(off), tf (ns) td(off) 102 102 GATE RESISTANCE, RG, (Ω) 12/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM400C1Y-24S Dual (AC Switch) IGBT S-Series Module 350 Amperes/1200 Volts SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 104 tf 102 103 VCC = 600V VGE = ±15V IC = 600A Tj = 150°C Inductive Load td(on) tr 101 10-1 100 101 SWITCHING TIME, td(on), tr (ns) SWITCHING TIME, td(off), tf (ns) td(off) REVERSE RECOVERY, Irr (A), trr (ns) 103 102 102 102 101 101 103 EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE VS. VGE 20 102 101 101 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load Irr trr 102 EMITTER CURRENT, IE, (AMPERES) 103 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY, Irr (A), trr (ns) 102 GATE RESISTANCE, RG, (Ω) 103 12/12 Rev. 0 VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load Irr trr VCC = 600V IC = 400A Tj = 25°C 15 10 5 0 0 500 1000 1500 GATE CHARGE, QG, (nC) 7 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM400C1Y-24S Dual (AC Switch) IGBT S-Series Module 350 Amperes/1200 Volts 101 102 100 101 Eon Eoff Err 100 103 102 101 102 100 10-1 101 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) INDUCTIVE LOAD, PER PULSE 101 10-1 100 101 GATE RESISTANCE, RG, (Ω) 8 102 100 103 102 100 102 VCC = 600V VGE = ±15V IC/IE = 400A Tj = 150°C SWITCHING ENERGY, Eon, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 101 103 SWITCHING ENERGY, Eoff, (mJ) SWITCHING ENERGY, Eon, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 102 Eon Eoff Err HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC = 600V VGE = ±15V IC/IE = 400A Tj = 125°C Eon Eoff Err 101 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 103 INDUCTIVE LOAD, PER PULSE Eon Eoff Err 102 INDUCTIVE LOAD, PER PULSE 101 10-1 100 101 102 101 SWITCHING ENERGY, Eoff, (mJ) 10-1 101 VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C 102 REVERSE RECIVERY ENERGY, Err, (mJ/PULSE) 103 INDUCTIVE LOAD, PER PULSE SWITCHING ENERGY, Eon, Eoff, (mJ/PULSE) SWITCHING ENERGY, Eon, Eoff, (mJ/PULSE) 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECIVERY ENERGY, Err, (mJ/PULSE) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 100 102 GATE RESISTANCE, RG, (Ω) 12/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) CM400C1Y-24S Dual (AC Switch) IGBT S-Series Module 350 Amperes/1200 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 100 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 56 K/kW (IGBT) Rth(j-c) = 95 K/kW (FWDi) 10-2 10-3 10-5 10-4 10-3 10-2 10-1 100 101 TIME, (s) 12/12 Rev. 0 9