Powerex Power CM400C1Y-24S Chopper igbt nx-series module 300 amperes/1200 volt Datasheet

CM400C1Y-24S
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Dual (AC Switch)
IGBT S-Series Module
350 Amperes/1200 Volts
A
D
L
(4 PLACES)
K
K
K
V
G
C2E1
G2
E2
C1
E2
B E
H
N J
E1
G1
M
(3 PLACES)
F
G
Q
P
Q
P
Description:
Powerex Dual IGBT Modules are
designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
X
Z
F
Y
U
V
P
AA
AB (TAB #110)
W S
C
T
LABEL
R
G2
E2 (Es2)
Di1
Tr2
C2E1
E2
Tr1
Di2
C1
Tolerance Otherwise Specified
Division of Dimension
Tolerance
0.5 to
3
±0.2
over
3 to
6
±0.3
over
6 to
30
±0.5
over 30 to 120
±0.8
over 120 to 400
±1.2
E1 (Es1)
G1
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
A
4.33
110.0
Q
0.28
7.0
B
3.15
80.0
R
0.84
21.2
C
1.14+0.04/-0.02
29.0+1.0/-0.5
S
0.33
8.5
D
3.66±0.01
93.0±0.25
T
1.10
28.0
E
2.44±0.01
62.0±0.25
U
0.16
4.0
25.0
V
0.11
2.8
F
0.98
G
0.24
6.0
W
0.29
7.5
H
0.59
15.0
X
0.21
5.3
J
0.81
20.5
Y
0.26
6.7
K
0.55
14.0
Z
0.85
21.5
12.0
L
0.26 Dia.
6.5 Dia.
AA
0.47
M
M6 Metric
M6
AB
t = 0.02
N
1.18
P
12/12 Rev. 0
0.71
30.0
18.0
t = 0.5
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM400C1Y-24S is a
1200V (VCES), 350 Ampere Dual
AC Switch IGBT Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
350
24
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM400C1Y-24S
Dual (AC Switch) IGBT S-Series Module
350 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Rating
Units
Collector-Emitter Voltage (G-E Short-Circuited)
VCES
1200
Volts
Gate-Emitter Voltage (C-E Short-Circuited)
VGES
±20
Volts
Collector Current (DC, TC = 124°C)*2,*4
IC
350
Amperes
Collector Current (Pulse, Repetitive)*3
ICRM
800
Amperes
Ptot
2670
Watts
Total Power Dissipation (TC = 25°C)*2,*4
*1
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
Maximum Junction Temperature
Maximum Case
Temperature*2
Operating Junction Temperature
24.6
37.8
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
0
Storage Temperature
350
Amperes
IERM*1
800
Amperes
VISO
2500
Volts
Tj(max)
175
°C
TC(max)
125
°C
Tj(opr)
-40 to +150
°C
Tstg
-40 to +125
°C
79.0
IE
Emitter Current (Pulse, Repetitive)*3
65.8
Emitter
Current*2,*4
0
0
30.7
Tr2
Tr2
44.2
Di2
Di2
Di1
Tr1
35.3
Di1
Tr1
48.8
LABEL SIDE
Tr1/Tr2: IGBT
2
Di1/Di2: FWDi
12/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM400C1Y-24S
Dual (AC Switch) IGBT S-Series Module
350 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Emitter Cutoff Current
ICES
VCE = VCES, G-E Short-Circuited
—
—
1
mA
Gate-Emitter Leakage Current
IGES
VGE = VGES, C-E Short-Circuited
—
—
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 40mA, VCE = 10V
5.4
6.0
6.6
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 400A, VGE = 15V, Tj = 25°C*5
—
1.85
2.30
Volts
(Terminal)
IC = 400A, VGE = 15V, Tj = 125°C*5
—
2.05
—
Volts
IC = 400A, VGE = 15V, Tj = 150°C*5
—
2.10
—
Volts
25°C*5
—
1.70
2.15
Volts
IC = 400A, VGE = 15V, Tj = 125°C*5
—
1.90
—
Volts
150°C*5
—
1.95
—
Volts
—
—
40
nF
—
—
8.0
nF
—
—
0.66
nF
—
934
—
nC
—
—
800
ns
Collector-Emitter Saturation Voltage
VCE(sat)
(Chip)
IC = 400A, VGE = 15V, Tj =
IC = 400A, VGE = 15V, Tj =
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Gate Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Emitter-Collector Voltage
Emitter-Collector Voltage
QG
VCE = 10V, G-E Short-Circuited
VCC = 600V, IC = 400A, VGE = 15V
td(on)
tr
VCC = 600V, IC = 400A, VGE = ±15V,
—
—
200
ns
td(off)
RG = 0Ω, Inductive Load
—
—
600
ns
tf
—
300
ns
—
1.85
2.30
Volts
IE = 400A, VGE = 0V, Tj = 25°C*5
(Terminal)
IE = 400A, VGE = 0V, Tj = 125°C*5
—
1.85
—
Volts
IE = 400A, VGE = 0V, Tj = 150°C*5
—
1.85
—
Volts
VEC*1
IE = 400A, VGE = 0V, Tj = 25°C*5
—
1.70
2.15
Volts
(Chip)
IE = 400A, VGE = 0V, Tj = 125°C*5
—
1.70
—
Volts
IE = 400A, VGE = 0V, Tj =
Reverse Recovery Time
—
VEC*1
trr*1
—
1.70
—
Volts
VCC = 600V, IE = 400A, VGE = ±15V
—
—
300
ns
*1
Reverse Recovery Charge
Qrr
Turn-on Switching Energy per Pulse
Eon
150°C*5
RG = 0Ω, Inductive Load
—
21.4
—
µC
VCC = 600V, IC = IE = 400A,
—
39.8
—
mJ
Turn-off Switching Energy per Pulse
Eoff
VGE = ±15V, RG = 0Ω,
—
44.9
—
mJ
Reverse Recovery Energy per Pulse
Err*1
Tj = 150°C, Inductive Load
—
35.2
—
mJ
rg
Per Switch
—
4.9
—
Ω
Internal Gate Resistance
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
12/12 Rev. 0
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM400C1Y-24S
Dual (AC Switch) IGBT S-Series Module
350 Amperes/1200 Volts
Thermal Resistance Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case*2
Rth(j-c)Q
Per IGBT
—
—
56
K/kW
Case*2
Rth(j-c)D
Per IFWDi
—
—
95
K/kW
Rth(c-s)
Thermal Grease Applied
—
18
—
K/kW
Test Conditions
Min.
Typ.
Max.
Units
Mt
Main Terminals, M6 Screw
31
35
40
in-lb
Ms
Mounting to Heatsink, M6 Screw
31
35
40
in-lb
—
580
—
Grams
On Centerline X, Y*7
-100
—
+100
µm
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to
Contact Thermal Resistance,
Case to
Heatsink*2
(Per 1/2
Module)*6
Mechanical Characteristics
Characteristics
Symbol
Mounting Torque
Weight
m
Flatness of Baseplate
ec
Recommended Operating Conditons, Ta = 25°C
Symbol
—
600
850
Volts
13.5
15.0
16.5
Volts
RG
Per Switch
0
—
10
Ω
– CONCAVE
+ CONVEX
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
79.0
Applied Across C1-E2
Applied Across G1-Es1 / G2-Es2
65.8
External Gate Resistance
VCC
VGE(on)
24.6
Gate (-Emitter Drive) Voltage
37.8
(DC) Supply Voltage
0
Characteristics
0
0
30.7
Tr2
Tr2
44.2
Di2
Di2
Di1
Tr1
35.3
Di1
Tr1
48.8
Y
X
3 mm
LABEL SIDE
BOTTOM
Tr1/Tr2: IGBT
Di1/Di2: FWDi
– CONCAVE
BOTTOM
LABEL SIDE
BOTTOM
4
+ CONVEX
12/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM400C1Y-24S
Dual (AC Switch) IGBT S-Series Module
350 Amperes/1200 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
OUTPUT CHARACTERISTICS
(CHIP - TYPICAL)
800
3.5
600
12
13.5
15
500
11
400
300
10
200
9
100
0
Tj = 25°C
0
2
4
6
8
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
2.5
2.0
1.5
1.0
0.5
0 100 200 300 400 500 600 700 800
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(CHIP - TYPICAL)
103
10
Tj = 25°C
8
IC = 800A
6
IC = 400A
4
IC = 160A
2
0
6
8
10
12
14
16
18
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
12/12 Rev. 0
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 150°C
3.0
0
10
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
700
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
VGE = 20V
20
Tj = 25°C
Tj = 125°C
Tj = 150°C
102
101
0
0.5
1.0
1.5
2.0
2.5
3.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM400C1Y-24S
Dual (AC Switch) IGBT S-Series Module
350 Amperes/1200 Volts
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
103
td(off)
Cies
td(on)
SWITCHING TIME, (ns)
CAPACITANCE, Cies, Coes, Cres, (nF)
102
101
Coes
100
tf
tr
102
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
Cres
VGE = 0V
10-1
10-1
100
101
102
101
101
102
103
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
103
103
td(off)
104
tf
tr
102
101
101
COLLECTOR CURRENT, IC, (AMPERES)
6
102
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
102
tf
103
103
VCC = 600V
VGE = ±15V
IC = 400A
Tj = 125°C
Inductive
Load
td(on)
tr
101
10-1
100
101
SWITCHING TIME, td(on), tr (ns)
SWITCHING TIME, (ns)
td(on)
SWITCHING TIME, td(off), tf (ns)
td(off)
102
102
GATE RESISTANCE, RG, (Ω)
12/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM400C1Y-24S
Dual (AC Switch) IGBT S-Series Module
350 Amperes/1200 Volts
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
104
tf
102
103
VCC = 600V
VGE = ±15V
IC = 600A
Tj = 150°C
Inductive
Load
td(on)
tr
101
10-1
100
101
SWITCHING TIME, td(on), tr (ns)
SWITCHING TIME, td(off), tf (ns)
td(off)
REVERSE RECOVERY, Irr (A), trr (ns)
103
102
102
102
101
101
103
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
GATE CHARGE VS. VGE
20
102
101
101
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
Irr
trr
102
EMITTER CURRENT, IE, (AMPERES)
103
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
REVERSE RECOVERY, Irr (A), trr (ns)
102
GATE RESISTANCE, RG, (Ω)
103
12/12 Rev. 0
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
Irr
trr
VCC = 600V
IC = 400A
Tj = 25°C
15
10
5
0
0
500
1000
1500
GATE CHARGE, QG, (nC)
7
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM400C1Y-24S
Dual (AC Switch) IGBT S-Series Module
350 Amperes/1200 Volts
101
102
100
101
Eon
Eoff
Err
100
103
102
101
102
100
10-1
101
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
INDUCTIVE LOAD, PER PULSE
101
10-1
100
101
GATE RESISTANCE, RG, (Ω)
8
102
100
103
102
100
102
VCC = 600V
VGE = ±15V
IC/IE = 400A
Tj = 150°C
SWITCHING ENERGY, Eon, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
101
103
SWITCHING ENERGY, Eoff, (mJ)
SWITCHING ENERGY, Eon, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
102
Eon
Eoff
Err
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
VCC = 600V
VGE = ±15V
IC/IE = 400A
Tj = 125°C
Eon
Eoff
Err
101
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
103
103
INDUCTIVE LOAD, PER PULSE
Eon
Eoff
Err
102
INDUCTIVE LOAD, PER PULSE
101
10-1
100
101
102
101
SWITCHING ENERGY, Eoff, (mJ)
10-1
101
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
102
REVERSE RECIVERY ENERGY, Err, (mJ/PULSE)
103
INDUCTIVE LOAD, PER PULSE
SWITCHING ENERGY, Eon, Eoff, (mJ/PULSE)
SWITCHING ENERGY, Eon, Eoff, (mJ/PULSE)
102
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
REVERSE RECIVERY ENERGY, Err, (mJ/PULSE)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
100
102
GATE RESISTANCE, RG, (Ω)
12/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
CM400C1Y-24S
Dual (AC Switch) IGBT S-Series Module
350 Amperes/1200 Volts
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MAXIMUM)
100
10-1
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
56 K/kW
(IGBT)
Rth(j-c) =
95 K/kW
(FWDi)
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
TIME, (s)
12/12 Rev. 0
9
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