SEME BFC48 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm (inches) (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 4.50 (0.177) M ax. 3.55 (0.140) 3.81 (0.150) 2 VDSS ID(cont) RDS(on) 3 1.65 (0.065) 2.13 (0.084) 19.81 (0.780) 20.32 (0.800) 0.40 (0.016) 0.79 (0.031) 1 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) 2.21 (0.087) 2.59 (0.102) Terminal 1 Gate Terminal 3 Source 5.25 (0.215) BSC Terminal 2 600V 13.0A Ω 0.60Ω Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain – Source Voltage 600 V ID Continuous Drain Current 13 A IDM Pulsed Drain Current 1 52 A VGS Gate – Source Voltage ±30 V PD Total Power Dissipation @ Tcase = 25°C 240 W TJ , TSTG Operating and Storage Junction Temperature Range TL Lead Temperature : 0.063” from Case for 10 Sec. –55 to 150 °C 300 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic Drain – Source Breakdown Voltage Test Conditions VGS = 0V , ID = 250µA Zero Gate Voltage Drain Current VDS = VDSS 250 (VGS = 0V) VDS = 0.8VDSS , TC = 125°C 1000 IGSS Gate – Source Leakage Current VGS = ±30V , VDS = 0V ±100 nA VGS(TH) Gate Threshold Voltage VDS = VGS , ID = 1.0mA 4 V ID(ON) On State Drain Current 2 RDS(ON) Drain – Source On State Resistance 2 BVDSS IDSS VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] Min. 600 2 Typ. Max. Unit V 13 µA A 0.60 Ω 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 4/94 SEME BFC48 LAB DYNAMIC CHARACTERISTICS Ciss Characteristic Input Capacitance Test Conditions VGS = 0V Coss Output Capacitance Crss Min. Typ. 1510 Max. Unit 1800 VDS = 25V 280 390 Reverse Transfer Capacitance f = 1MHz 105 157 Qg Total Gate Charge3 VGS = 10V 66 105 Qgs Gate – Source Charge VDD = 0.5 VDSS 8 12 Qgd Gate – Drain (“Miller”) Charge ID = ID [Cont.] @ 25°C 35 53 td(on) Turn–on Delay Time VGS = 15V 13 25 tr Rise Time VDD = 0.5 VDSS 18 35 td(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 51 77 tf Fall Time RG = 1.8Ω 21 41 pF nC ns SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS Characteristic Continuous Source Current Test Conditions (Body Diode) ISM Pulsed Source Current1 (Body Diode) VSD Diode Forward Voltage2 VGS = 0V , IS = – ID [Cont.] trr Reverse Recovery Time IS = – ID [Cont.] , dls / dt = 100A/µs Qrr Reverse Recovery Charge Min. Typ. Max. Unit 13 A 52 1.3 V 148 297 594 ns 2 4 8 µC Min. Typ. SAFE OPERATING AREA CHARACTERISTICS Characteristic SOA1 Safe Operating Area SOA2 Safe Operating Area ILM Inductive Current Clamped Test Conditions VDS = 0.4VDSS , t = 1 Sec. IDS = PD / 0.4VDSS VDS = PD / ID [Cont.] IDS = ID [Cont.] , t = 1 Sec. Max. Unit 240 W 240 W 52 A THERMAL CHARACTERISTICS RθJC Characteristic Junction to Case RθJA Junction to Ambient Min. Typ. Max. Unit 0.51 °C/W 40 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 4/94