Seme LAB BFC48 4th generation mosfet Datasheet

SEME
BFC48
LAB
4TH GENERATION MOSFET
TO247–AD Package Outline.
Dimensions in mm (inches)
(0.185)
(0.209)
(0.059)
(0.098)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
15.49 (0.610)
16.26 (0.640)
20.80 (0.819)
21.46 (0.845)
6.15
(0.242)
BSC
4.69
5.31
1.49
2.49
4.50
(0.177)
M ax.
3.55 (0.140)
3.81 (0.150)
2
VDSS
ID(cont)
RDS(on)
3
1.65 (0.065)
2.13 (0.084)
19.81 (0.780)
20.32 (0.800)
0.40 (0.016)
0.79 (0.031)
1
2.87 (0.113)
3.12 (0.123)
1.01 (0.040)
1.40 (0.055)
2.21 (0.087)
2.59 (0.102)
Terminal 1 Gate
Terminal 3 Source
5.25 (0.215)
BSC
Terminal 2
600V
13.0A
Ω
0.60Ω
Drain
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS
Drain – Source Voltage
600
V
ID
Continuous Drain Current
13
A
IDM
Pulsed Drain Current 1
52
A
VGS
Gate – Source Voltage
±30
V
PD
Total Power Dissipation @ Tcase = 25°C
240
W
TJ , TSTG
Operating and Storage Junction Temperature Range
TL
Lead Temperature : 0.063” from Case for 10 Sec.
–55 to 150
°C
300
STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
Characteristic
Drain – Source Breakdown Voltage
Test Conditions
VGS = 0V , ID = 250µA
Zero Gate Voltage Drain Current
VDS = VDSS
250
(VGS = 0V)
VDS = 0.8VDSS , TC = 125°C
1000
IGSS
Gate – Source Leakage Current
VGS = ±30V , VDS = 0V
±100
nA
VGS(TH)
Gate Threshold Voltage
VDS = VGS , ID = 1.0mA
4
V
ID(ON)
On State Drain Current 2
RDS(ON)
Drain – Source On State Resistance 2
BVDSS
IDSS
VDS > ID(ON) x RDS(ON) Max
VGS = 10V
VGS = 10V , ID = 0.5 ID [Cont.]
Min.
600
2
Typ.
Max. Unit
V
13
µA
A
0.60
Ω
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94
SEME
BFC48
LAB
DYNAMIC CHARACTERISTICS
Ciss
Characteristic
Input Capacitance
Test Conditions
VGS = 0V
Coss
Output Capacitance
Crss
Min.
Typ.
1510
Max. Unit
1800
VDS = 25V
280
390
Reverse Transfer Capacitance
f = 1MHz
105
157
Qg
Total Gate Charge3
VGS = 10V
66
105
Qgs
Gate – Source Charge
VDD = 0.5 VDSS
8
12
Qgd
Gate – Drain (“Miller”) Charge
ID = ID [Cont.] @ 25°C
35
53
td(on)
Turn–on Delay Time
VGS = 15V
13
25
tr
Rise Time
VDD = 0.5 VDSS
18
35
td(off)
Turn-off Delay Time
ID = ID [Cont.] @ 25°C
51
77
tf
Fall Time
RG = 1.8Ω
21
41
pF
nC
ns
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Characteristic
Continuous Source Current
Test Conditions
(Body Diode)
ISM
Pulsed Source Current1
(Body Diode)
VSD
Diode Forward Voltage2
VGS = 0V , IS = – ID [Cont.]
trr
Reverse Recovery Time
IS = – ID [Cont.] , dls / dt = 100A/µs
Qrr
Reverse Recovery Charge
Min.
Typ.
Max. Unit
13
A
52
1.3
V
148
297
594
ns
2
4
8
µC
Min.
Typ.
SAFE OPERATING AREA CHARACTERISTICS
Characteristic
SOA1
Safe Operating Area
SOA2
Safe Operating Area
ILM
Inductive Current Clamped
Test Conditions
VDS = 0.4VDSS , t = 1 Sec.
IDS = PD / 0.4VDSS
VDS = PD / ID [Cont.]
IDS = ID [Cont.] , t = 1 Sec.
Max. Unit
240
W
240
W
52
A
THERMAL CHARACTERISTICS
RθJC
Characteristic
Junction to Case
RθJA
Junction to Ambient
Min.
Typ.
Max. Unit
0.51
°C/W
40
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94
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