CJPF07N65 TO-220F Plastic-Encapsulate MOSFETS CJPF07N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. 1. GATE 2. DRAIN 3. SOURCE FEATURE High Current Rating Lower RDS(on) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Fast Switching Capability Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 7.4 A Pulsed Drain Current IDM 29.6 A Single Pulsed Avalanche Energy (note1) EAS 245 mJ Thermal Resistance from Junction to Ambient RθJA 62.5 ℃/W TJ, TSTG -55 ~+150 ℃ TL 260 ℃ Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes , Duration for 5 Seconds [email protected] www.zpsemi.com 1 of 3 CJPF07N65 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 650 V Zero gate voltage drain current IDSS VDS =650V, VGS =0V 10 µA Gate-body leakage current IGSS VDS =0V, VGS =±30V ±100 nA Drain-source diode forward voltage VSD VGS = 0V, IS =7.4A 1.4 V 4 V 1.3 Ω On characteristics (note 2) Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA Static drain-source on-resistance RDS(on) VGS =10V, ID =3.7A gfs VDS =40V, ID =3.7A Forward transconductance 2 5 S Dynamic characteristics (note 3) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 1400 VDS =25V,VGS =0V,f =1MHz 180 pF 21 Switching characteristics (note 3) Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Turn-on rise time Turn-off delay time tr td(off) Turn-off fall time 29 VDS =520V,VGS =10V,ID =7.4A 38 nC 7 14.5 70 VDD=325V, RG=25Ω, ID =7.4A tf 170 140 ns 130 Notes : 1. L=10mH, IAS=7A, VDD=50V, VGS=10V,RG=25Ω, Starting TJ=25℃. 2. Pulse Test: Pulse width≤300µs, duty cycle ≤2%. 3. These parameters have no way to verify. [email protected] www.zpsemi.com 2 of 3 CJPF07N65 Transfer Characteristics Output Characteristics 4 9 Pulsed VGS= 6V、 8V、10V VDS=10V Pulsed (A) 3 ID 6 DRAIN CURRENT DRAIN CURRENT ID (A) VGS=5.5V VGS=5V 3 2 1 Ta=100℃ VGS=4.5V Ta=25℃ 0 0 0 10 20 30 DRAIN TO SOURCE VOLTAGE VDS 40 0 (V) 1 2 3 4 5 GATE TO SOURCE VOLTAGE VGS 6 7 (V) RDS(ON)—— VGS RDS(ON) —— ID 8 2.5 Ta=25℃ Pulsed Pulsed ID=3.7A 7 ( Ω) VGS=10V RDS(ON) 1.5 6 5 ON-RESISTANCE ON-RESISTANCE RDS(ON) ( Ω) 2.0 1.0 4 Ta=100℃ 3 2 0.5 1 Ta=25℃ 0.0 0 0 2 4 6 DRAIN CURRENT 8 ID 10 2 (A) 4 6 8 10 GATE TO SOURCE VOLTAGE VGS 12 (V) Threshold Voltage IS —— VSD 10 5 (V) 4 ID=250uA VTH 1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) Pulsed Ta=100℃ 0.1 Ta=25℃ 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE [email protected] 1.0 1.2 3 2 1 0 25 VSD (V) 50 75 JUNCTION TEMPERATURE www.zpsemi.com 100 TJ 125 (℃ ) 3 of 3