DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS55 High-speed diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 10 Philips Semiconductors Product specification High-speed diode BAS55 FEATURES DESCRIPTION • Small plastic SMD package The BAS55 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT23 package. • High switching speed: max. 6 ns • Continuous reverse voltage: max. 60 V • Repetitive peak reverse voltage: max. 60 V • Repetitive peak forward current: max. 600 mA. PINNING handbook, halfpage 2 PIN DESCRIPTION 1 anode 2 not connected 3 cathode 1 2 n.c. APPLICATIONS 1 • High-speed switching in surface mounted circuits. 3 3 MAM185 Marking code: L5p. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 60 V VR continuous reverse voltage − 60 V IF continuous forward current − 250 mA IFRM repetitive peak forward current − 600 mA IFSM non-repetitive peak forward current t = 1 µs − 9 A t = 100 µs − 3 A t = 10 ms − 1.7 A see Fig.2; note 1 square wave; Tj = 25 °C prior to surge; see Fig.4 Ptot total power dissipation − 250 Tstg storage temperature Tamb = 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 10 2 mW Philips Semiconductors Product specification High-speed diode BAS55 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS VF forward voltage see Fig.3; IF = 200 mA; DC value; note 1 IR reverse current see Fig.5 MIN. − MAX. 1.0 UNIT V VR = 60 V − 100 nA VR = 60 V; Tj = 150 °C − 100 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 2.5 pF trr reverse recovery time when switched from IF = 400 mA to IR = 400 mA; RL = 100 Ω; measured at IR = 40 mA; see Fig.7 − 6 ns Vfr forward recovery voltage when switched to IF = 400 mA; tr = 30 ns; see Fig.8 − 2 V when switched to IF = 400 mA; tr = 100 ns; see Fig.8 − 1.5 V Note 1. Tamb = 25 °C; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 10 3 VALUE UNIT 330 K/W 500 K/W Philips Semiconductors Product specification High-speed diode BAS55 GRAPHICAL DATA MBG441 300 MBH279 300 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 200 100 100 0 0 0 100 Tamb (oC) 200 0 2 VF (V) Tj = 25 °C. Device mounted on an FR4 printed-circuit board. Fig.2 1 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage; typical values. MBG703 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 10 4 104 Philips Semiconductors Product specification High-speed diode BAS55 MBH282 102 handbook, halfpage IR (µA) Cd (pF) 10 1.5 (1) 1 MBH283 2.0 handbook, halfpage (2) 1.0 10−1 0.5 10−2 100 0 Tj (oC) 0 0 200 (1) VR = 60 V; maximum values. (2) VR = 60 V; typical values. Fig.5 1996 Sep 10 10 20 VR (V) 30 f = 1 MHz; Tj = 25 °C. Reverse current as a function of junction temperature. Fig.6 5 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed diode BAS55 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 40 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R = 50 Ω S D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Input signal: forward pulse duration tp = 300 ns; duty factor δ = 0.01. Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 10 6 t tp output signal Philips Semiconductors Product specification High-speed diode BAS55 PACKAGE OUTLINE 3.0 2.8 handbook, full pagewidth 0.55 0.45 B 1.9 0.150 0.090 0.95 2 1 0.1 max 10 o max 0.2 M A A 1.4 1.2 2.5 max 10 o max 3 1.1 max 0.48 0.38 30 o max 0.1 M A B MBC846 TOP VIEW Dimensions in mm. Fig.9 SOT23. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 10 7