AP9960GD Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 ▼ Low On-Resistance D2 D1 ▼ Fast Switching Speed D1 ▼ PDIP-8 Package BVDSS 40V RDS(ON) 25mΩ ID 7A G2 S2 PDIP-8 G1 S1 Description D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D2 G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 40 V ± 20 V Continuous Drain Current 3 7 A Continuous Drain Current 3 5.6 A 20 A 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 2 W Linear Derating Factor 0.016 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 62.5 ℃/W 200528031 AP9960GD Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 40 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.032 - V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=7A - - 25 mΩ VGS=4.5V, ID=5A - - 40 mΩ VDS=VGS, ID=250uA 1 - 3 V VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS VDS=10V, ID=7A - 25 - S o VDS=40V, VGS=0V - - 1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=32V ,VGS=0V - - 25 uA Gate-Source Leakage VGS= ± 20V - - ±100 nA ID=7A - 14.7 - nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=250uA 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=20V - 7.1 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6.8 - nC VDS=20V - 11.5 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 6.3 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 28.2 - ns tf Fall Time RD=20Ω - 12.6 - ns Ciss Input Capacitance VGS=0V - 1725 - pF Coss Output Capacitance VDS=25V - 235 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 145 - pF Min. Typ. VD=VG=0V , VS=1.3V - - 1.54 A IS=2.3A, VGS=0V - - 1.3 V Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Forward On Voltage 2 Test Conditions Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Mounted on 1 in2 copper pad of FR4 board ; 90℃/W when mounted on Min. copper pad. Max. Units AP9960GD 36 32 T A =150 o C 10V 6.0V 5.0V 4.5V 24 ID , Drain Current (A) ID , Drain Current (A) T A =25 o C 12 V GS =4.0V 10V 6.0V 5.0V 4.5V 24 V GS =4.0V 16 8 0 0 0 1 2 3 0 4 1 V DS , Drain-to-Source Voltage (V) 2 3 4 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2 80 I D =7.0A T A =25 ℃ I D =7.0A V GS =10V Normalized RDS(ON) RDS(ON) (mΩ ) 60 40 1.4 0.8 20 0 0.2 2 4 6 8 10 12 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 3.5 3 1 o VGS(th) (V) IS(A) 2.5 o Tj=150 C Tj=25 C 2 1.5 0.1 1 0.5 0.01 0 0.4 0.8 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 T j , Junction Temperature ( 150 o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9960GD f=1.0MHz 10000 12 V DS =12V V DS =16V V DS =20V 9 Ciss 1000 C (pF) VGS , Gate to Source Voltage (V) I D =7.0A 6 Coss Crss 100 3 10 0 0 5 10 15 20 1 25 7 13 19 25 31 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 10 ID (A) 1ms 10ms 1 100ms 1s 0.1 T A =25 o C Single Pulse DC Normalized Thermal Response (Rthja) DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.0 PDM t Single Pulse 0.01 T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=90℃ ℃ /W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Fig 12. Gate Charge Waveform Q