AP85U03GH
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
30V
RDS(ON)
5.5mΩ
ID
G
75A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
G
D
□
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
Continuous Drain Current
ID@TC=100℃
Continuous Drain Current
3
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
4
Rating
Units
30
V
+20
V
75
A
56
A
220
A
60
W
0.48
W/℃
57.6
mJ
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
5
Value
Units
2.5
℃/W
62.5
℃/W
110
℃/W
1
200807174
AP85U03GH
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=40A
-
-
5.5
mΩ
VGS=4.5V, ID=30A
-
-
12
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
27.5
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS=+20V
-
-
+100
nA
ID=30A
-
29
46
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
6.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
19
-
nC
VDS=15V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
84
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
27
-
ns
tf
Fall Time
RD=0.5Ω
-
83
-
ns
Ciss
Input Capacitance
VGS=0V
-
2400 3840
pF
Coss
Output Capacitance
VDS=25V
-
395
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
390
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
1.8
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.2
V
IS=10A, VGS=0V,
-
33
-
ns
dI/dt=100A/µs
-
30
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
3.Package limitation current is 75A .
4.Starting Tj=25oC , VDD=20V , L=0.1mH , RG=25Ω , IAS=24A.
5.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP85U03GH
200
100
T C =25 o C
T C =175 o C
10V
7.0 V
80
ID , Drain Current (A)
ID , Drain Current (A)
160
10V
7 .0V
5.0V
4.5 V
5.0V
120
4.5 V
80
60
40
V G =3.0V
40
20
V G = 3.0 V
0
0
0.0
2.0
4.0
6.0
8.0
0.0
V DS , Drain-to-Source Voltage (V)
2.0
4.0
6.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
14
I D =40A
V G =10V
I D =30A
T C =25 o C
12
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
10
8
6
1.2
0.8
4
0.4
2
2
4
6
8
-50
10
0
50
100
150
200
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
50
1.6
40
T j =175 o C
30
Normalized VGS(th) (V)
IS(A)
1.2
o
T j =25 C
20
0.8
0.4
10
0
0.0
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
200
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP85U03GH
16
f=1.0MHz
10000
12
V DS =16V
V DS =20V
V DS =24V
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D =30A
8
1000
C oss
C rss
4
100
0
0
15
30
45
1
60
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
100
ID (A)
100us
10
1ms
10ms
100ms
DC
1
T C =25 o C
Single Pulse
0
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D
D1
E2
MIN
NOM
MAX
A2
1.80
2.30
2.80
A3
0.40
0.50
0.60
B1
0.40
0.70
1.00
D
6.00
6.50
7.00
D1
4.80
5.35
5.90
E3
3.50
4.00
4.50
E3
E1
B1
F1
e
Millimeters
SYMBOLS
F
2.20
2.63
3.05
F1
0.5
0.85
1.20
E1
5.10
5.70
6.30
E2
0.50
1.10
1.80
e
--
2.30
--
C
0.35
0.50
0.65
F
e
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
R : 0.127~0.381
A2
A3
(0.1mm
C
Part Marking Information & Packing : TO-252
Part Number
Package Code
meet Rohs requirement
85U03GH
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5