4GB Registered DIMM
DDR SDRAM
DDR SDRAM Registered Module
( TSOP-II )
184pin Registered Module based on 1Gb M-die
with 1,200mil Height & 72-bit ECC
Revision 0.4
April, 2004
Rev. 0.4 April. 2004
4GB Registered DIMM
DDR SDRAM
Revision History
Revision 0.0 (Mar, 2003)
- First release
Revision 0.1 (March, 2003)
- Complete DDR266 IDD current spec.
- Drop AA(DDR266@CL=2.0) speed.
Revision 0.2 (August, 2003)
- Corrected typo.
Revision 0.3 (September, 2003)
- Corrected tRFC to 120ns.
Revision 0.4 (April, 2004)
- Update DDR266 IDD current spec.
- Add DDR333 IDD current spec.
Rev. 0.4 April. 2004
4GB Registered DIMM
DDR SDRAM
184Pin Registered DIMM based on 1Gb M-die (x4)
Ordering Information
Part Number
Density
Organization
Component Composition
Heihgt
M312L5128MT0-CA2/B0/A0
4GB
512M x 72
st.512Mx4( K4H2G0638M) * 18EA
1,200mil
Operating Frequencies
B3(DDR333@CL=2.5)
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
Speed @CL2
133MHz
133MHz
100MHz
Speed @CL2.5
166MHz
133MHz
133MHz
CL-tRCD-tRP
2.5-3-3
2-3-3
2.5-3-3
Feature
• Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 2, 2.5 (clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• tRFC(Refresh row cycle time) = 120ns
• Serial presence detect with EEPROM
• 1,200mil height & double sided
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Rev. 0.4 April. 2004
4GB Registered DIMM
DDR SDRAM
Pin Configuration (Front side/back side)
Pin
Front
Pin
Front
Pin
Front
Pin
Back
Pin
Back
Pin
Back
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
VREF
DQ0
VSS
DQ1
DQS0
DQ2
VDD
DQ3
NC
/RESET
VSS
DQ8
DQ9
DQS1
VDDQ
*CK1
*/CK1
VSS
DQ10
DQ11
CKE0
VDDQ
DQ16
DQ17
DQS2
VSS
A9
DQ18
A7
VDDQ
DQ19
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
A5
DQ24
VSS
DQ25
DQS3
A4
VDD
DQ26
DQ27
A2
VSS
A1
CB0
CB1
VDD
DQS8
A0
CB2
VSS
CB3
BA1
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
VDDQ
/WE
DQ41
/CAS
VSS
DQS5
DQ42
DQ43
VDD
*/CS2
DQ48
DQ49
VSS
*CK2
*/CK2
VDDQ
DQS6
DQ50
DQ51
VSS
VDDID
DQ56
DQ57
VDD
DQS7
DQ58
DQ59
VSS
NC
SDA
SCL
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
VSS
DQ4
DQ5
VDDQ
DM0/DQS9
DQ6
DQ7
VSS
NC
NC
NC
VDDQ
DQ12
DQ13
DM1/DQS10
VDD
DQ14
DQ15
CKE1
VDDQ
*BA2
DQ20
A12
VSS
DQ21
A11
DM2/DQS11
VDD
DQ22
A8
DQ23
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
VSS
A6
DQ28
DQ29
VDDQ
DM3/DQS12
A3
DQ30
VSS
DQ31
CB4
CB5
VDDQ
CK0
/CK0
VSS
DM8/DQS17
A10
CB6
VDDQ
CB7
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
/RAS
DQ45
VDDQ
/CS0
/CS1
DM5/DQS14
VSS
DQ46
DQ47
*/CS3
VDDQ
DQ52
DQ53
A13
VDD
DM6/DQS15
DQ54
DQ55
VDDQ
NC
DQ60
DQ61
VSS
DM7/DQS16
DQ62
DQ63
VDDQ
SA0
SA1
SA2
VDDSPD
KEY
53
54
55
56
57
58
59
60
61
DQ32
VDDQ
DQ33
DQS4
DQ34
VSS
BA0
DQ35
DQ40
KEY
145
146
147
148
149
150
151
152
153
VSS
DQ36
DQ37
VDD
DM4/DQS13
DQ38
DQ39
VSS
DQ44
Note :
1. * : These pins are not used in this module.
2. Pins 111, 158 are NC for 1row module [ M312L2823MTS, M312L5620MTS ] & used for 2row module [ M312L5623MTS,
M312L5128MT0 ]
3. Pins 97, 107, 119, 129, 140, 149, 159, 169, 177 : DM (x8 base module) or DQS (x4 base module).
Pin Description
Pin Name
Function
Pin Name
Function
A0 ~ A13
Address input (Multiplexed)
DM0 ~ DM8
Data - in mask
BA0 ~ BA1
Bank Select Address
VDD
Power supply (2.5V)
DQ0 ~ DQ63
Data input/output
VDDQ
Power Supply for DQS(2.5V)
DQS0 ~ DQS17
Data Strobe input/output
VSS
Ground
CK0,CK0
Clock input
VREF
Power supply for reference
CKE0, CKE1(for 2 Row)
Clock enable input
VDDSPD
Serial EEPROM Power/Supply ( 2.3V to 3.6V )
/CS0, /CS1(for 2 Row)
Chip select input
SDA
Serial data I/O
RAS
Row address strobe
SCL
Serial clock
CAS
Column address strobe
SA0 ~ 2
Address in EEPROM
WE
Write enable
NC
No connection
CB0 ~ CB7
Check bit(Data-in/data-out)
Rev. 0.4 April. 2004
4GB Registered DIMM
DDR SDRAM
4GB, 512M x 72 ECC Module [ M312L5128MT0 ] (Populated as 2 bank of x4 DDR SDRAM Module)
Functional Block Diagram
VSS
RCS1
RCS0
DQS0
DM0/DQS9
CS
DQ0
DQ1
DQ2
DQ3
DQS
I/O 3
I/O 2
I/O 1
I/O 0
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS
DQ8
DQ9
DQ10
DQ11
CS
DQ16
DQ17
DQ18
DQ19
DQS
I/O 3
I/O 2
I/O 1
I/O 0
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS
DQ24
DQ25
DQ26
DQ27
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS
DQ32
DQ33
DQ34
DQ35
CS
DQ40
DQ41
DQ42
DQ43
DQS
I/O 3
I/O 2
I/O 1
I/O 0
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS
DQ48
DQ49
DQ50
DQ51
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS
DQ56
DQ57
DQ58
DQ59
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS
CB0
CB1
CB2
CB3
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D0
CS
DM
DQ4
DQ5
DQ6
DQ7
D18
DQS1
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D1
CS
DM
DQ12
DQ13
DQ14
DQ15
D19
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D2
CS
DM
DQ20
DQ21
DQ22
DQ23
D20
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D3
CS
DM
DQ28
DQ29
DQ30
DQ31
D21
DQS
I/O 0
I/O 1
I/O 2
I/O 3
D11
DQS
I/O 0
I/O 1
I/O 2
I/O 3
D27
DQS
I/O 0
I/O 1
I/O 2
I/O 3
D28
DQS
I/O 0
I/O 1
I/O 2
I/O 3
D29
CS
DM
CS
DM
CS
DM
CS
DM
CS
DM
DQS
I/O 0
I/O 1
I/O 2
I/O 3
D12
DQS
I/O 0
I/O 1
I/O 2
I/O 3
D13
DQS
I/O 0
I/O 1
I/O 2
I/O 3
D14
CS
DM
DQS
I/O 0
I/O 1
I/O 2
I/O 3
D30
DQS
I/O 0
I/O 1
I/O 2
I/O 3
D31
DQS
I/O 0
I/O 1
I/O 2
I/O 3
D32
CS
DM
DM4/DQS13
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D4
CS
DM
DQ36
DQ37
DQ38
DQ39
D22
DQS5
CS
DM
CS
DM
DM5/DQS14
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D5
CS
DM
DQ44
DQ45
DQ46
DQ47
D23
DQS6
CS
DM
CS
DM
DM6/DQS15
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D6
CS
DM
DQ52
DQ53
DQ54
DQ55
D24
DQS7
DQS
I/O 0
I/O 1
I/O 2
I/O 3
D15
DQS
I/O 0
I/O 1
I/O 2
I/O 3
D16
CS
DM
DQS
I/O 0
I/O 1
I/O 2
I/O 3
D33
DQS
I/O 0
I/O 1
I/O 2
I/O 3
D34
CS
DM
DM7/DQS16
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D7
CS
DM
DQ60
DQ61
DQ62
DQ63
D25
DQS8
CS
DM
CS
DM
DM8/DQS17
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D8
CS
DM
CB4
CB5
CB6
CB7
D26
VDDSPD
Serial PD
SCL
R
E
G
I
S
T
E
R
RCS0
RCS1
RBA0 - RBA1
RA0 - RA13
RRAS
CS
D17
A2
VREF
D0 - D35
SA0
SA1
SA2
VSS
D0 - D35
RAS: SDRAMs D0 - D35
CAS: SDRAMs D0 - D35
CKE: SDRAMs D0 - D17
RCKE1
CKE: SDRAMs D18 - D35
DQS
I/O 3
I/O 2
I/O 1
I/O 0
CS
DM
D35
D0 - D35
A1
BA0-BAn: SDRAMs D0 - D35
A0-A13 SDRAMs D0 - D35
DM
SPD
D0 - D35
A0
RCAS
RCKE0
RWE
DQS
I/O 3
I/O 2
I/O 1
I/O 0
VDD/VDDQ
SDA
WP
PCK
D10
DM
DM3/DQS12
DM
DQS4
WE
DQS
I/O 0
I/O 1
I/O 2
I/O 3
CS
DM2/DQS11
DM
DQS3
CS1
BA0-BA1
A0-A13
RAS
CAS
CKE0
CKE1
D9
DM1/DQS10
DM
DQS2
CS0
DQS
I/O 0
I/O 1
I/O 2
I/O 3
CK0,CK0
PLL
Notes:
1. DQ-to-I/O wiring is shown as recommended but may be changed.
2. DQ/DQS/DM/CKE/CS relationships must be maintained as shown.
3. DQ, DQS, DM/DQS resistors: 22 Ohms.
WE: SDRAMs D0 - D35
RESET
PCK
Rev. 0.4 April. 2004
4GB Registered DIMM
DDR SDRAM
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VDD supply relative to Vss
VDD,VDDQ
-1.0 ~ 3.6
V
TSTG
-55 ~ +150
°C
Power dissipation
PD
1.5 * # of component
W
Short circuit current
IOS
50
mA
Storage temperature
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Power & DC Operating Conditions (SSTL_2 In/Out)
Recommended operating conditions (Voltage referenced to VSS=0V, TA=0 to 70°C)
Parameter
Symbol
Min
Max
Supply voltage(for device with a nominal VDD of 2.5V)
VDD
2.3
2.7
I/O Supply voltage
VDDQ
2.3
2.7
V
I/O Reference voltage
VREF
VDDQ/2-50mV
VDDQ/2+50mV
V
1
I/O Termination voltage(system)
VTT
VREF-0.04
VREF+0.04
V
2
Input logic high voltage
VIH(DC)
VREF+0.15
VDDQ+0.3
V
4
Input logic low voltage
VIL(DC)
-0.3
VREF-0.15
V
4
Input Voltage Level, CK and CK inputs
VIN(DC)
-0.3
VDDQ+0.3
V
Input Differential Voltage, CK and CK inputs
VID(DC)
0.3
VDDQ+0.6
V
II
-2
2
uA
Output leakage current
IOZ
-5
5
uA
Output High Current(Normal strengh driver)
;VOUT = VTT + 0.84V
IOH
-16.8
mA
Output High Current(Normal strengh driver)
;VOUT = VTT - 0.84V
IOL
16.8
mA
Output High Current(Half strengh driver)
;VOUT = VTT + 0.45V
IOH
-9
mA
Output High Current(Half strengh driver)
;VOUT = VTT - 0.45V
IOL
9
mA
Input leakage current
Unit
Note
3
Notes : 1. Includes ± 25mV margin for DC offset on VREF, and a combined total of ± 50mV margin for all AC noise and DC offset on
VREF, bandwidth limited to 20MHz. The DRAM must accommodate DRAM current spikes on VREF and internal DRAM noise
coupled to VREF, both of which may result in VREF noise. VREF should be de-coupled with an inductance of ≤ 3nH.
2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to
VREF, and must track variations in the DC level of VREF
3. VID is the magnitude of the difference between the input level on CK and the input level on CK.
4. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in
simulation. The AC and DC input specifications are relative to a VREF envelop that has been bandwidth limited to 200MHz.
Rev. 0.4 April. 2004
4GB Registered DIMM
DDR SDRAM
DDR SDRAM IDD spec table
M312L5128MT0 [ (st.512M x 4) * 18 , 4GB Module ]
(VDD=2.7V, T = 10°C)
IDD6
Symbol
B3(DDR333 @CL=2.5)
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
Unit
IDD0
4600
4025
4025
mA
IDD1
5140
4565
4565
mA
IDD2P
841
791
791
mA
IDD2F
2260
1955
1955
mA
IDD2Q
1705
1475
1475
mA
IDD3P
1705
1655
1655
mA
IDD3N
3160
2855
2855
mA
IDD4R
5500
4745
4745
mA
IDD4W
6760
5735
5735
mA
IDD5
7480
6995
6995
mA
913
863
863
mA
9460
8165
8165
mA
Normal
Low power
IDD7A
mA
Notes
Optional
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev. 0.4 April. 2004
4GB Registered DIMM
DDR SDRAM
AC Operating Conditions
Parameter/Condition
Max
Symbol
Min
Input High (Logic 1) Voltage, DQ, DQS and DM signals
VIH(AC)
VREF + 0.31
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
VIL(AC)
Input Differential Voltage, CK and CK inputs
VID(AC)
0.7
Input Crossing Point Voltage, CK and CK inputs
VIX(AC)
0.5*VDDQ-0.2
Unit
Note
V
3
VREF - 0.31
V
3
VDDQ+0.6
V
1
0.5*VDDQ+0.2
V
2
Note : 1. VID is the magnitude of the difference between the input level on CK and the input on CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same.
3. These parameters should be tested at the pim on actual components and may be checked at either the pin or the pad in
simulation. the AC and DC input specificatims are refation to a Vref envelope that has been bandwidth limited 20MHz.
Vtt=0.5*VDDQ
RT=50Ω
Output
Z0=50Ω
CLOAD=30pF
VREF
=0.5*VDDQ
Output Load Circuit (SSTL_2)
Input/Output Capacitance
Parameter
(VDD=2.5V, VDDQ=2.5V, TA= 25°C, f=1MHz)
Symbol
M312L5128MT0
Min
Unit
Max
Input capacitance(A0 ~ A13, BA0 ~ BA1,RAS,CAS,WE )
CIN1
9
11
pF
Input capacitance(CKE0,CKE1)
CIN2
9
11
pF
Input capacitance( CS0, CS1)
CIN3
9
11
pF
Input capacitance( CLK0, CLK0 )
CIN4
11
12
pF
Input capacitance(DM0~DM8)
CIN5
14
16
pF
Data & DQS input/output capacitance(DQ0~DQ63)
Cout1
14
16
pF
Data input/output capacitance (CB0~CB7)
Cout2
14
16
pF
Rev. 0.4 April. 2004
4GB Registered DIMM
DDR SDRAM
AC Timming Parameters & Specifications
Parameter
Symbol
B3
(DDR333@CL=2.5)
Min
Max
A2
(DDR266@CL=2)
B0
(DDR266@CL=2.5)
Min
Min
Max
Unit
Row cycle time
tRC
60
65
65
Refresh row cycle time
tRFC
120
120
120
Row active time
tRAS
42
RAS to CAS delay
tRCD
18
20
20
tRP
18
20
20
ns
tRRD
12
15
15
ns
Write recovery time
tWR
15
15
15
ns
Last data in to Read command
tWTR
1
1
1
tCK
Row precharge time
Row active to Row active delay
Col. address to Col. address delay
Clock cycle time
tCCD
CL=2.0
CL=2.5
Clock high level width
Clock low level width
tCK
tCH
70K
1
45
120K
1
45
ns
ns
120K
ns
ns
1
tCK
7.5
12
7.5
12
10
12
6
12
7.5
12
7.5
12
ns
ns
0.45
0.55
0.45
0.55
0.45
0.55
tCK
tCK
tCL
0.45
0.55
0.45
0.55
0.45
0.55
tDQSCK
-0.60
+0.60
-0.75
+0.75
-0.75
+0.75
ns
Output data access time from CK/CK
tAC
-0.70
+0.70
-0.75
+0.75
-0.75
+0.75
ns
Data strobe edge to ouput data edge
tDQSQ
-
0.4
-
0.5
-
0.5
ns
Read Preamble
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
tCK
DQS-out access time from CK/CK
Note
Max
Read Postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
CK to valid DQS-in
tDQSS
0.75
1.25
0.75
1.25
0.75
1.25
tCK
DQS-in setup time
tWPRES
0
0
0
ns
DQS-in hold time
tWPRE
0.25
0.25
0.25
tCK
12
3
DQS falling edge to CK rising-setup time
tDSS
0.2
0.2
0.2
tCK
DQS falling edge from CK rising-hold time
tDSH
0.2
0.2
0.2
tCK
DQS-in high level width
tDQSH
0.35
0.35
0.35
tCK
DQS-in low level width
tDQSL
0.35
0.35
0.35
DQS-in cycle time
tDSC
0.9
Address and Control Input setup time(fast)
tIS
0.75
0.9
0.9
ns
i,5.7~9
Address and Control Input hold time(fast)
tIH
0.75
0.9
0.9
ns
i,5.7~9
Address and Control Input setup time(slow)
tIS
0.8
1.0
1.0
ns
i, 6~9
Address and Control Input hold time(slow)
tIH
0.8
1.0
1.0
ns
i, 6~9
Data-out high impedence time from CK/CK
tHZ
-0.70
+0.70
+0.75
ns
1
Data-out low impedence time from CK/CK
tLZ
-0.70
+0.70
+0.75
ns
1
Input Slew Rate(for input only pins)
1.1
0.9
1.1
0.9
+0.75
-0.75
+0.75
-0.75
tCK
1.1
tCK
tSL(I)
0.5
0.5
0.5
V/ns
tSL(IO)
0.5
0.5
0.5
V/ns
Output Slew Rate(x4,x8)
tSL(O)
1.0
4.5
1.0
4.5
1.0
4.5
Output Slew Rate Matching Ratio(rise to fall)
tSLMR
0.67
1.5
0.67
1.5
0.67
1.5
Input Slew Rate(for I/O pins)
V/ns
Rev. 0.4 April. 2004
4GB Registered DIMM
Parameter
DDR SDRAM
Symbol
B3
(DDR333@CL=2.5)
Min
A2
(DDR266@CL=2)
Max
Min
Max
B0
(DDR266@CL=2.5)
Min
Unit
Mode register set cycle time
tMRD
12
15
15
ns
DQ & DM setup time to DQS
tDS
0.45
0.5
0.5
ns
DQ & DM hold time to DQS
tDH
0.45
0.5
Note
Max
ns
0.5
j, k
j, k
Control & Address input pulse width
tIPW
2.2
2.2
2.2
ns
8
DQ & DM input pulse width
tDIPW
1.75
1.75
1.75
ns
8
Power down exit time
tPDEX
6
7.5
7.5
ns
Exit self refresh to non-Read command
tXSNR
75
75
75
ns
Exit self refresh to read command
tXSRD
200
200
200
tCK
Refresh interval time
tREFI
7.8
7.8
7.8
us
4
Output DQS valid window
tQH
tHP
-tQHS
tHP
-tQHS
-
tHP
-tQHS
-
ns
11
Clock half period
tHP
tCLmin
or tCHmin
tCLmin
or tCHmin
-
tCLmin
or tCHmin
-
ns
10, 11
0.75
ns
11
0.6
tCK
2
tCK
13
Data hold skew factor
tQHS
DQS write postamble time
tWPST
0.4
0.4
0.75
Active to Read with Auto precharge
command
tRAP
18
20
20
Autoprecharge write recovery +
Precharge time
tDAL
(tWR/tCK)
+
(tWR/tCK)
+
(tWR/tCK)
+
0.6
0.4
System Characteristics for DDR SDRAM
The following specification parameters are required in systems using DDR333, DDR266 & DDR200 devices to ensure
proper system performance. these characteristics are for system simulation purposes and are guaranteed by design.
Table 1 : Input Slew Rate for DQ, DQS, and DM
AC CHARACTERISTICS
DDR333
DDR266
DDR200
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
Units
Notes
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
DCSLEW
TBD
TBD
TBD
TBD
0.5
4.0
V/ns
a, m
Table 2 : Input Setup & Hold Time Derating for Slew Rate
Input Slew Rate
tIS
tIH
Units
Notes
0.5 V/ns
0
0
ps
i
0.4 V/ns
+50
0
ps
i
0.3 V/ns
+100
0
ps
i
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
Input Slew Rate
tDS
tDH
Units
0.5 V/ns
0
0
ps
Notes
k
0.4 V/ns
+75
+75
ps
k
0.3 V/ns
+150
+150
ps
k
Rev. 0.4 April. 2004
4GB Registered DIMM
DDR SDRAM
Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate
Delta Slew Rate
tDS
tDH
Units
Notes
+/- 0.0 V/ns
0
0
ps
j
+/- 0.25 V/ns
+50
+50
ps
j
+/- 0.5 V/ns
+100
+100
ps
j
Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only)
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
1.0
4.5
a,c,d,f,g,h
Pulldown slew
1.2 ~ 2.5
1.0
4.5
b,c,d,f,g,h
Table 6 : Output Slew Rate Characteristice (X16 Devices only)
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
0.7
5.0
a,c,d,f,g,h
Pulldown slew
1.2 ~ 2.5
0.7
5.0
b,c,d,f,g,h
Table 7 : Output Slew Rate Matching Ratio Characteristics
AC CHARACTERISTICS
DDR333
DDR266
DDR200
PARAMETER
MIN
MAX
MIN
MAX
MIN
MAX
Notes
Output Slew Rate Matching Ratio (Pullup to Pulldown)
TBD
TBD
TBD
TBD
0.67
1.5
e,m
Rev. 0.4 April. 2004
4GB Registered DIMM
DDR SDRAM
System Notes :
a. Pullup slew rate is characteristized under the test conditions as shown in Figure 1.
Test point
Output
50Ω
VSSQ
Figure 1 : Pullup slew rate test load
b. Pulldown slew rate is measured under the test conditions shown in Figure 2.
VDDQ
50Ω
Output
Test point
Figure 2 : Pulldown slew rate test load
c. Pullup slew rate is measured between (VDDQ/2 - 320 mV +/- 250 mV)
Pulldown slew rate is measured between (VDDQ/2 + 320 mV +/- 250 mV)
Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output
switching.
Example : For typical slew rate, DQ0 is switching
For minmum slew rate, all DQ bits are switching from either high to low, or low to high.
The remaining DQ bits remain the same as for previous state.
d. Evaluation conditions
Typical : 25 °C (T Ambient), VDDQ = 2.5V, typical process
Minimum : 70 °C (T Ambient), VDDQ = 2.3V, slow - slow process
Maximum : 0 °C (T Ambient), VDDQ = 2.7V, fast - fast process
e. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire temperature and
voltage range. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation.
f. Verified under typical conditions for qualification purposes.
g. TSOPII package divices only.
h. Only intended for operation up to 266 Mbps per pin.
i. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below 0.5V/ns
as shown in Table 2. The Input slew rate is based on the lesser of the slew rates detemined by either VIH(AC) to VIL(AC) or
VIH(DC) to VIL(DC), similarly for rising transitions.
j. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates differ, as shown in Tables 3 & 4.
Input slew rate is based on the larger of AC-AC delta rise, fall rate and DC-DC delta rise, Input slew rate is based on the lesser of the
slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions.
The delta rise/fall rate is calculated as: {1/(Slew Rate1)} - {1/(Slew Rate2)}
For example : If Slew Rate 1 is 0.5 V/ns and slew Rate 2 is 0.4 V/ns, then the delta rise, fall rate is - 0.5ns/V . Using the table given, this
would result in the need for an increase in tDS and tDH of 100 ps.
k. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser
on the lesser of the AC - AC slew rate and the DC- DC slew rate. The inut slew rate is based on the lesser of the slew rates deter
mined by either VIH(ac) to VIL(ac) or VIH(DC) to VIL(DC), and similarly for rising transitions.
m. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi
tions through the DC region must be monotony.
Rev. 0.4 April. 2004
4GB Registered DIMM
DDR SDRAM
Command Truth Table
(V=Valid, X=Don′t Care, H=Logic High, L=Logic Low)
COMMAND
CKEn-1
CKEn
CS
RAS
CAS
WE BA0,1 A10/AP
A0 ~ A9
Note
A11 ~ A13
Register
Extended MRS
H
X
L
L
L
L
OP CODE
1, 2
Register
Mode Register Set
H
X
L
L
L
L
OP CODE
1, 2
L
L
L
H
X
L
H
H
H
Auto Refresh
Refresh
Entry
Self
Refresh
Exit
H
H
L
L
H
H
X
X
X
Bank Active & Row Addr.
H
X
L
L
H
H
V
Read &
Column Address
Auto Precharge Disable
H
X
L
H
L
H
V
Write &
Column Address
Auto Precharge Disable
Auto Precharge Enable
Auto Precharge Enable
Burst Stop
Precharge
Bank Selection
X
L
H
L
L
H
X
L
H
H
L
H
All Banks
Active Power Down
H
X
Entry
H
L
Exit
L
H
Entry
H
L
Precharge Power Down Mode
Exit
DM
No operation (NOP) : Not defined
L
H
L
L
H
L
H
X
X
X
L
V
V
V
X
X
X
X
H
X
X
X
L
H
H
H
H
X
X
X
L
V
V
V
H
H
X
X
X
X
X
L
H
H
H
3
X
V
3
Row Address
L
Column
Address
H
L
Column
Address
H
X
V
L
X
H
4
4
4
4, 6
7
X
5
X
X
X
H
3
3
X
8
9
9
Note : 1. OP Code : Operand Code. A0 ~ A13 & BA0 ~ BA1 : Program keys. (@EMRS/MRS)
2. EMRS/ MRS can be issued only at all banks precharge state.
A new command can be issued 2 clock cycles after EMRS or MRS.
3. Auto refresh functions are same as the CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA0 ~ BA1 : Bank select addresses.
If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected.
If BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank B is selected.
If BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank C is selected.
If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected.
5. If A10/AP is "High" at row precharge, BA0 and BA1 are ignored and all banks are selected.
6. During burst write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
7. Burst stop command is valid at every burst length.
8. DM sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0).
9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM.
Rev. 0.4 April. 2004
4GB Registered DIMM
DDR SDRAM
Physical Dimensions: st.512Mx72 (M312L5128MT0)
Units : Inches (Millimeters)
5.25 ± 0.005
(133.350 ± 0.13)
0.118
(3.00)
5.171
(131.350)
5.077
(128.950)
Reg.
A
B
0.100 Min
(2.50 Min)
(2.30 Min)
0.393
(10.00)
0.78
(19.80)
0.7
(17.80)
1.2
(30.48)
0.0787
R (2.00)
2.500
A
0.10 M
B
C B A
(0.157)
(4.00)
0.268 Max
(6.81 Max)
PLL
0.250
(6.350)
0.157
(4.00)
0.100
0.26
(6.62)
(2.50 )
0.050 ± 0.0039
(1.270 ± 0.10)
0.0787
R (2.00)
0.1496
(3.80)
2.175
0.071
(1.80)
Detail A
0.118
(3.00)
0.039 ± 0.002
(1.000 ± 0.050)
0.0078 ± 0.006
(0.20 ± 0.15)
0.050
(1.270)
Detail B
0.1575
(4.00)
0.10 M C A M B
Tolerances : ± 0.005(.13) unless otherwise specified
The used device is st.512Mx4 SDRAM, 66TSOPII
SDRAM Part NO : K4H2G0638M
Rev. 0.4 April. 2004