SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT551 ISSUE 3 - OCTOBER 1995 FEATURES * 60 Volt VCEO * 1 Amp continuous current TYPICAL CHARACTERISTICS 100 - Normalised Gain (%) - (Volts) -0.8 -0.6 -0.4 -0.2 0 -0.01 -0.1 -1 -10 COMPLEMENTARY TYPE PARTMARKING DETAIL 60 ABSOLUTE MAXIMUM RATINGS. 20 -0.1 -1 IC - Collector Current (Amps) VCE(sat) v IC hFE v IC -10 -1.0 - (Volts) - (Volts) -0.01 IC - Collector Current (Amps) -1.2 -0.9 -0.6 V -0.8 -0.01 -0.1 -1 VALUE UNIT VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Base Current IB -200 mA 500 mW -55 to +200 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg PARAMETER SYMBOL MIN. -0.7 Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Sustaining Voltage -0.01 -0.1 -1 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(on) v IC VBE(sat) v IC -10 10 1 DC 1s 100ms 10ms 1ms 100µs 0.1 0.01 0.1V 1V 10V VCE - Collector Emitter Voltage (V) Safe Operating Area 3 - 130 SYMBOL Collector-Base Voltage ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). -0.6 -10 PARAMETER -0.8 V -1.0 B FMMT451 551 40 -0.001 -1.4 E C 80 h V IC/IB=10 FMMT551 100V MAX. UNIT CONDITIONS. -80 V IC=-100µ A VCEO(sus) -60 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A Collector Cut-Off Current I CBO -0.1 µA VCB=-60V Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.35 V IC=-150mA, IB=-15mA* Base-Emitter Saturation Voltage VBE(sat) -1.1 V IC=-150mA, IB=-15mA* Static Forward Current Transfer Ratio hFE 50 10 Transition Frequency fT 150 Output Capacitance Cobo 150 25 IC=-150mA, VCE=-10V* IC=-1A, VCE=-10V* MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 129 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT551 ISSUE 3 - OCTOBER 1995 FEATURES * 60 Volt VCEO * 1 Amp continuous current TYPICAL CHARACTERISTICS 100 - Normalised Gain (%) - (Volts) -0.8 -0.6 -0.4 -0.2 0 -0.01 -0.1 -1 -10 COMPLEMENTARY TYPE PARTMARKING DETAIL 60 ABSOLUTE MAXIMUM RATINGS. 20 -0.1 -1 IC - Collector Current (Amps) VCE(sat) v IC hFE v IC -10 -1.0 - (Volts) - (Volts) -0.01 IC - Collector Current (Amps) -1.2 -0.9 -0.6 V -0.8 -0.01 -0.1 -1 VALUE UNIT VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Base Current IB -200 mA 500 mW -55 to +200 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg PARAMETER SYMBOL MIN. -0.7 Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Sustaining Voltage -0.01 -0.1 -1 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(on) v IC VBE(sat) v IC -10 10 1 DC 1s 100ms 10ms 1ms 100µs 0.1 0.01 0.1V 1V 10V VCE - Collector Emitter Voltage (V) Safe Operating Area 3 - 130 SYMBOL Collector-Base Voltage ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). -0.6 -10 PARAMETER -0.8 V -1.0 B FMMT451 551 40 -0.001 -1.4 E C 80 h V IC/IB=10 FMMT551 100V MAX. UNIT CONDITIONS. -80 V IC=-100µ A VCEO(sus) -60 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A Collector Cut-Off Current I CBO -0.1 µA VCB=-60V Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.35 V IC=-150mA, IB=-15mA* Base-Emitter Saturation Voltage VBE(sat) -1.1 V IC=-150mA, IB=-15mA* Static Forward Current Transfer Ratio hFE 50 10 Transition Frequency fT 150 Output Capacitance Cobo 150 25 IC=-150mA, VCE=-10V* IC=-1A, VCE=-10V* MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device 3 - 129