TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/181 DEVICES LEVELS 2N718A 2N1613 2N1613L JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Min. Unit Collector-Emitter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 7.0 Vdc IC 500 mAdc Collector Current Total Power Dissipation @ TA = +25°C 2N718A 2N1613, L PT 0.5 0.8 W Total Power Dissipation @ TC = +25°C 2N718A 2N1613, L PT 1.8 3.0 W TJ, Tstg -65 to +200 °C RθJC 97 58 °C/W Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to-Case 2N718A 2N1613, L TO-18 (TO-206AA) 2N718A (1) Derate linearly at 4.57 mW/°C for 2N1613, L and 2.85mW/°C for 2N718A for TA > +25°C (2) Derate linearly at 17.2 mW/°C for 2N1613, L and 10.3mW/°C for 2N718A for TC > +25°C TO-39 (TO-205AD) 2N1613 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit Collector-Emitter Breakdown Voltage IC = 100µAdc V(BR)CEO 30 Vdc Collector-Emitter Breakdown Voltage IC = 100µAdc, RBE = 10Ω V(BR)CER 50 Vdc OFF CHARACTERTICS Collector-Base Cutoff Current VCB = 60Vdc VCB = 75Vdc Emitter-Base Cutoff Current VEB = 5.0Vdc VEB = 7.0Vdc T4-LDS-0200 Rev. 1 (110597) ICBO 10 10 ηAdc µAdc IEBO 10 10 ηA dc µAdc TO-5 2N1613L Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc IC = 10mAdc, VCE = 10Vdc IC = 150mAdc, VCE = 10Vdc 20 hFE 35 40 120 20 IC = 500mAdc, VCE = 10Vdc Collector-Emitter Saturation Voltage IC = 150mAdc, IB = 15mAdc VCE(sat) 1.5 Vdc Base-Emitter Saturation Voltage IC = 150mAdc, IB = 15mAdc VBE(sat) 1.3 Vdc Max. Unit DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Small-Signal Forward Current Transfer Ratio IC = 50mAdc, VCE = 10Vdc, f = 20MHz Small-Signal Forward Current Transfer Ratio IC = 1.0mAdc, VCE = 5Vdc, f = 1.0kHz IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz Symbol Min. |hfe| 3.0 hfe 30 100 35 150 4.0 8.0 Ω Small-Signal Short Circuit Input Impedance IC = 5.0mAdc, VCB = 10Vdc, f = 1.0kHz hib Small-Signal Short Circuit Output Admittance IC = 5.0mAdc, VCB = 10Vdc, f = 1.0kHz hob 1.0 ηΩ Output Capacitance VCB = 10Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz Cobo 25 pF Max. Unit 30 ηs SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time & Turn-Off Time (See Figure 5 of MIL-PRF-19500/181) Symbol ton + toff Min. (3) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0% T4-LDS-0200 Rev. 1 (110597) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Dimensions Symbol Inches Millimeters CD CH HD LC LD LL LU L1 L2 TL TW P Min Max .178 .195 .170 .210 .209 .230 .100 TP .016 .021 .500 .750 .016 .019 .050 .250 .028 .048 .036 .046 .100 Min Max 4.52 4.95 4.32 5.33 5.31 5.84 2.54 TP 0.41 0.53 12.70 19.05 0.41 0.48 1.27 6.35 0.71 1.22 .91 1.17 2.54 Q .030 0.76 R .010 .025 α 45° TP Notes 5 8, 9 7, 9 4, 8, 9 9 9 5 3 6 45° TP NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. This zone is controlled for automatic handling. The variation in actual diameter within this zone shall not exceed .010 inch (0.254 mm). 4. (Three leads) LU applies between L1 and L2. LD applies between L2 and .5 inch (12.70 mm) from seating plane. Diameter is uncontrolled in L1 and beyond .5 inch (12.70 mm) from seating plane. 5. Measured from maximum diameter of the actual device. 6. Details of outline in this zone optional. 7. The collector shall be electrically connected to the case. 8. Lead number 1 - emitter; lead number 2 - base; lead number 3 - collector. 9. All three leads. 10. In accordance with ANSI Y14.5M, diameters are equivalent to Φx symbology. FIGURE 1. Physical dimensions 2N718A (TO-18). T4-LDS-0200 Rev. 1 (110597) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Dimensions Symbol Inches Millimeters CH LC LD LL LU L1 L2 HD CD P Q r Min Max Min Max .240 .260 6.10 6.60 .200 TP 5.08 TP .016 .021 0.41 0.53 See notes 12 and 13 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .335 .370 8.51 9.40 .305 .335 7.75 8.51 .100 2.54 .050 1.27 .010 0.25 TL .029 .045 0.74 1.14 TW .028 .034 0.71 0.86 α 45° TP 45° TP Notes 7 8, 9 8, 9 8, 9 8, 9 6 5 4 7 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of 0.011 inch (0.28 mm). 4. TL measured from maximum HD. 5. Outline in this zone is not controlled. 6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 7. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.000 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may be measured by direct methods or by the gauging procedure. 8. LU applies between L1 and L2. LU applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 9. All three leads. 10. The collector shall be electrically and mechanically connected to the case. 11. r (radius) applies to both inside corners of tab. 12. For transistor types 2N1613, dimension LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm) maximum. 13. For transistor types 2N1613L, dimension LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm) maximum. 14. Lead number 1 - emitter; lead number 2 - base; lead number 3 - collector. FIGURE 2. Physical dimensions 2N1613 and 2N1613L (similar to TO-5 and TO-39). T4-LDS-0200 Rev. 1 (110597) Page 4 of 4