June 1996 NDP7060L / NDB7060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 75A, 60V. RDS(ON) = 0.015Ω @ VGS = 5V Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings T C = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage NDP7060L 60 V VDGR Drain-Gate Voltage (RGS < 1 MΩ) 60 V VGSS Gate-Source Voltage - Continuous ± 20 V ID Drain Current - Nonrepetitive (tP < 50 µs) PD 75 - Pulsed 225 Total Power Dissipation @ TC = 25°C Operating and Storage Temperature Range © 1997 Fairchild Semiconductor Corporation Units ± 40 - Continuous Derate above 25°C TJ,TSTG NDB7060L A 150 W 1 W/°C -65 to 175 °C NDP7060L Rev. B2 / NDB7060L Rev. C Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units 550 mJ 75 A 250 µA DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS Single Pulse Drain-Source Avalanche Energy IAR Maximum Drain-Source Avalanche Current VDD = 25 V, ID = 75 A OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V 60 V 1 mA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA V TJ = 125°C ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA TJ = 125°C RDS(ON) Static Drain-Source On-Resistance 1 1.3 2 0.65 0.8 1.5 0.01 0.015 0.016 0.024 VGS = 5 V, ID = 37.5 A TJ = 125°C ID(on) On-State Drain Current VGS = 5 V, VDS = 10 V 75 gFS Forward Transconductance VDS = 10 V, ID = 37.5 A 15 Ω A 67 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz 4200 4000 pF 1100 1600 pF 310 800 pF SWITCHING CHARACTERISTICS (Note 1) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 30 V, ID = 75 A, VGS = 5 V, RGEN = 10Ω RGS = 10 Ω VDS = 48 V, ID = 75 A, VGS = 5 V 23 40 nS 460 600 nS 100 150 nS 270 400 nS 86 115 nC 13 nC 62 nC NDP7060L Rev. B2 / NDB7060L Rev. C Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS IS Maximum Continuos Drain-Source Diode Forward Current 75 A ISM Maximum Pulsed Drain-Source Diode Forward Current 225 A VSD Drain-Source Diode Forward Voltage V VGS = 0 V, IS = 37.5 A (Note 1) TJ = 125°C trr Reverse Recovery Time Irr Reverse Recovery Current VGS = 0 V, IF = 60A, dIF/dt = 100 A/µs 0.92 1.3 0.85 1.2 108 150 ns 4.6 10 A 1 °C/W 62.5 °C/W THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP7060L Rev. B2 / NDB7060L Rev. C Typical Electrical Characteristics 120 2 6.0 4.0 5.0 4.5 3.5 R DS(on), NORMALIZED 100 80 3.0 60 40 2.5 20 0 0.5 1 1.5 2 V DS , DRAIN-SOURCE VOLTAGE (V) 2.5 4.0 1.2 4.5 5.0 1 6.0 10 0.8 20 40 60 80 I D , DRAIN CURRENT (A) 100 120 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2 V GS I D = 40A 1.75 R DS(on), NORMALIZED V GS = 10V 1.5 1.25 1 0.75 0.5 -50 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 DRAIN-SOURCE ON-RESISTANCE R DS(ON), NORMALIZED 3.5 1.4 0 2 DRAIN-SOURCE ON-RESISTANCE V GS = 3.0V 1.6 3 Figure 1. On-Region Characteristics. = 5V 1.8 TJ = 125°C 1.6 1.4 1.2 25°C 1 0.8 -55°C 0.6 175 0 Figure 3. On-Resistance Variation with Temperature. 20 40 60 80 ID , DRAIN CURRENT (A) 100 120 Figure 4. On-Resistance Variation with Drain Current and Temperature. 1 .4 V DS = 10V T = -55°C J V GS(th) , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 80 125°C 60 25°C 40 D , DRAIN CURRENT (A) 1.8 0.6 0 I DRAIN-SOURCE ON-RESISTANCE ID , DRAIN-SOURCE CURRENT (A) VGS = 10V 20 0 0 1 V GS 2 3 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 V DS = VGS 1 .2 I D = 250µA 1 0 .8 0 .6 0 .4 -50 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 175 Figure 6. Gate Threshold Variation with Temperature. NDP7060L Rev. B2 / NDB7060L Rev. C Typical Electrical Characteristics (continued) 80 50 I D = 250µA I , REVERSE DRAIN CURRENT (A) 1.1 1.05 1 0.95 0.9 -50 -25 0 T 10 T J = 125°C 25°C 1 -55°C 0.1 0.01 J 25 50 75 100 125 , JUNCTION TEMPERATURE (°C) 150 175 0.001 0.2 0.4 V Figure 7. Breakdown Voltage Variation with Temperature. SD 0.6 0.8 1 1.2 , BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 10 7000 Ciss I D = 75A 2000 Coss 1000 f = 1 MHz V GS = 0V 500 Crss 300 V DS = 12V 48V VGS , GATE-SOURCE VOLTAGE (V) 5000 CAPACITANCE (pF) V GS = 0V S BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1.15 8 24V 6 4 2 200 0 1 2 3 V DS 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 30 50 Figure 9. Capacitance Characteristics. 0 40 t on t d(on) VGEN t d(off) tf 90% 90% V OUT VO U T 10% R GEN RGS 10% INVERTED DUT G 90% V IN S 160 to f f tr RL D 120 Figure 10. Gate Charge Characteristics. VDD VIN 80 Q g , GATE CHARGE (nC) 50% 50% 10% PULSE W IDTH Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDP7060L Rev. B2 / NDB7060L Rev. C Typical Electrical Characteristics (continued) 300 V DS =10V 200 TJ = -55°C R 100 80 60 ID , DRAIN CURRENT (A) 25°C 125°C 40 (O DS N) Lim it 10µ s 100 µs 50 1m 10m 20 100 10 DC VGS = 10V SINGLE PULSE R θJC = 1 o C/W T C = 25 °C 5 20 FS , TRANSCONDUCTANCE (SIEMENS) 100 g 2 s s ms 1 0 0 10 20 30 40 50 60 1 2 3 5 10 20 30 60 100 V DS , DRAIN-SOURCE VOLTAGE (V)) I D , DRAIN CURRENT (A) Figure 13. Transconductance Variation with Drain Current and Temperature. Figure 14. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.3 R θJC (t) = r(t) * RθJC R θJC = 1.0 °C/W 0.2 0.2 0.1 0.1 P(pk) 0.05 0.05 t1 0.02 0.03 0.02 0.01 Single Pulse 0.01 0.01 0.05 t2 TJ - T C = P * R θ JC (t) Duty Cycle, D = t1 /t2 0.1 0.5 1 5 t 1 ,TIME (ms) 10 50 100 500 1000 Figure 15. Transient Thermal Response Curve. NDP7060L Rev. B2 / NDB7060L Rev. C