ACE ACE2010M P-channel -100v mosfet Datasheet

ACE2010M
P-Channel -100V MOSFET
Description
The ACE2010 miniature surface mount MOSFETs utilize a high cell density trench process to provide
low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC
converters and power management in portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
Features
•
•
•
•
Low rDS(on) provides higher efficiency and extends battery life
Low thermal impedance copper leadframe DPAK saves board space
Fast switching speed
High performance trench technology
Absolute Maximum Ratings
Symbol
Limit
Drain-Source Voltage
VDS
-100
Gate-Source Voltage
VGS
±20
ID
11
A
IDM
±40
A
IS
-15
A
PD
50
W
TJ, Tstg
-55 to 175
°C
Parameter
Continuous Drain Current
Pulsed Drain Current
TC =25°C
b
Continuous Source Current (Diode Conduction)
Power Dissipation
a
TC =25°C
Operating Junction and Storage Temperature Range
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
Symbol Maximum Unit
RθJA
50
RθJC
3.0
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1
1
ACE2010M
P-Channel -100V MOSFET
Packaging Type
TO-252
G D
S
Ordering information
ACE2010M YM + H
Halogen - free
Pb - free
YM : TO252
VER 1.1
2
ACE2010M
P-Channel -100V MOSFET
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Conditions
Min.
Typ.
Max.
VGS(th)
VDS = VGS, ID = -250 uA
-1
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ±20 V
±100
VDS = -80 V, VGS = 0 V
-1
Zero Gate Voltage Drain Current
IDSS
VDS = -80 V, VGS = 0 V, TJ = 55°C
-10
Unit
Static
Gate-Source Threshold Voltage
V
nA
uA
A
On-State Drain Current
ID(on)
VDS =- 5 V, VGS = -10 V
Drain-Source On-Resistance
rDS(on)
VGS = -10 V, ID = -1 A
295
VGS = -4.5 V, ID = -1 A
590
-20
mΩ
Forward Transconductance
gfs
VDS = -15 V, ID = -28 A
8
S
Diode Forward Voltage
VSD
IS = -2.5A, VGS = 0 V
-0.7
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
18
VDS = -30 V, VGS = -4.5 V,
ID = -28 A
5
2
8
tr
VDD = -30 V, RL = 30 Ω , ID = -1 A
10
td(off)
VGEN = -10 V, RGEN = 6 Ω
35
tf
nC
nS
12
Note:
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Packing Information
TO-252
VER 1.1
3
ACE2010M
P-Channel -100V MOSFET
SYMBOL
E
L
L1
L2
L3
L4
L5
D
H
b
b2
b3
e
A
A1
c
c2
D1
E1
θ
DIMENSIONAL REQMTS
MIN
NOM
MAX
6.40
6.60
6.731
1.40
1.52
1.77
2.743 REF
0.508 BSC
0.89
1.27
06.4
1.01
6.00
9.40
0.64
0.77
5.21
2.20
0
0.45
0.45
5.30
4.40
0。
6.10
6.223
10.00
10.40
0.76
0.88
0.84
1.14
5.34
5.46
2.286 BSC
2.30
2.38
0.127
0.50
0.60
0.50
0.58
10。
VER 1.1
4
ACE2010M
P-Channel -100V MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.1
5
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