ACE2010M P-Channel -100V MOSFET Description The ACE2010 miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DPAK saves board space Fast switching speed High performance trench technology Absolute Maximum Ratings Symbol Limit Drain-Source Voltage VDS -100 Gate-Source Voltage VGS ±20 ID 11 A IDM ±40 A IS -15 A PD 50 W TJ, Tstg -55 to 175 °C Parameter Continuous Drain Current Pulsed Drain Current TC =25°C b Continuous Source Current (Diode Conduction) Power Dissipation a TC =25°C Operating Junction and Storage Temperature Range Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Maximum Junction-to-Case Symbol Maximum Unit RθJA 50 RθJC 3.0 °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.1 1 ACE2010M P-Channel -100V MOSFET Packaging Type TO-252 G D S Ordering information ACE2010M YM + H Halogen - free Pb - free YM : TO252 VER 1.1 2 ACE2010M P-Channel -100V MOSFET Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. VGS(th) VDS = VGS, ID = -250 uA -1 Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 VDS = -80 V, VGS = 0 V -1 Zero Gate Voltage Drain Current IDSS VDS = -80 V, VGS = 0 V, TJ = 55°C -10 Unit Static Gate-Source Threshold Voltage V nA uA A On-State Drain Current ID(on) VDS =- 5 V, VGS = -10 V Drain-Source On-Resistance rDS(on) VGS = -10 V, ID = -1 A 295 VGS = -4.5 V, ID = -1 A 590 -20 mΩ Forward Transconductance gfs VDS = -15 V, ID = -28 A 8 S Diode Forward Voltage VSD IS = -2.5A, VGS = 0 V -0.7 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time 18 VDS = -30 V, VGS = -4.5 V, ID = -28 A 5 2 8 tr VDD = -30 V, RL = 30 Ω , ID = -1 A 10 td(off) VGEN = -10 V, RGEN = 6 Ω 35 tf nC nS 12 Note: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Packing Information TO-252 VER 1.1 3 ACE2010M P-Channel -100V MOSFET SYMBOL E L L1 L2 L3 L4 L5 D H b b2 b3 e A A1 c c2 D1 E1 θ DIMENSIONAL REQMTS MIN NOM MAX 6.40 6.60 6.731 1.40 1.52 1.77 2.743 REF 0.508 BSC 0.89 1.27 06.4 1.01 6.00 9.40 0.64 0.77 5.21 2.20 0 0.45 0.45 5.30 4.40 0。 6.10 6.223 10.00 10.40 0.76 0.88 0.84 1.14 5.34 5.46 2.286 BSC 2.30 2.38 0.127 0.50 0.60 0.50 0.58 10。 VER 1.1 4 ACE2010M P-Channel -100V MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 5