EMH4 / UMH4N / IMH4A Transistors ! ! General purpose (dual digital transistors) EMH4 / UMH4N / IMH4A zExternal dimensions (Unit : mm) zFeatures 1) Two DTC114T chips in a EMT or UMT or SMT package. 0.22 (5) (2) (1) (2) (1) (6) R1 (5) (6) R1 Each lead has same dimensions ROHM : EMT6 R1 (6) 1.25 zPackage, marking, and packaging specifications Package EMT5 UMT6 SMT6 Marking Code H4 T2R H4 TN H4 T110 Basic ordering unit (pieces) 8000 3000 3000 1.3 2.0 2.1 0.1Min. 0.9 IMH4A 0.7 UMH4N 0~0.1 EMH4 0.15 Type 0.65 UMH4N (3) R1=10KΩ 0.65 (1) 0.2 R1=10KΩ (2) (2) (3) (1) (6) (4) (5) R1 (5) (4) 1pin mark 0.5 IMH4A (4) 1.2 1.6 0.13 EMH4 / UMH4N (3) (3) (4) zEquivalent circuits 0.5 0.5 1.0 1.6 EMH4 Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 zAbsolute maximum ratings (Ta=25qC) Power dissipation EMH4 / UMH4N Pd Junction temperature Storage temperature 150(TOTAL) mW 300(TOTAL) IMH4A Tj 150 °C Tstg −55 to +150 °C ∗1 1.6 ∗2 2.8 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. 0.3Min. ROHM : SMT6 EIAJ : SC-74 1.1 mA 0.95 0.95 1.9 2.9 V 100 0.8 5 IC (1) VEBO Collector current (2) Emitter-base voltage IMH4A (3) V (6) 50 (5) VCEO (4) V Collector-emitter voltage 0~0.1 Unit 50 0.3 Limits VCBO Parameter 0.15 Symbol Collector-base voltage Each lead has same dimensions Rev.A 1/2 EMH4 / UMH4N / IMH4A Transistors ! ! zElectrical characteristics (Ta=25qC) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 50 − − V IC=50μA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Emitter-base breakdown voltage Collector cutoff current BVEBO ICBO 5 − − − − 0.5 V μA IE=50μA VCB=50V VEB=4V Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Conditions IEBO − − 0.5 μA VCE(sat) − − 0.3 V IC/IB=10mA/1mA hFE 100 250 600 − VCE=5V, IC=1mA Transition frequency fT − 250 − MHz Input resistance R1 7 10 13 kΩ VCE=10V, IE= −5mA, f=100MHz ∗ − ∗Transition frequency of the device. 1k VCE=5V DC CURRENT GAIN : hFE 500 200 Ta=100°C 25°C −40°C 100 50 20 10 5 2 1 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristics curves 1 lC/lB=10 500m 200m Ta=100°C 25°C −40°C 100m 50m 20m 10m 5m 2m 1m 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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