VS-HFA30PA60CPbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level Base common cathode 2 TO-247AC BENEFITS • • • • • 1 3 Anode Anode 2 1 2 Common cathode DESCRIPTION VS-HFA30PA60CPbF is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 15 A per leg continuous current, the VS-HFA30PA60CPbF is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA30PA60CPbF is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRODUCT SUMMARY Package TO-247AC IF(AV) 2 x 15 A VR 600 V VF at IF 1.7 V trr (typ.) 19 ns TJ max. 150 °C Diode variation Single die Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Maximum continuous forward current TEST CONDITIONS VR per leg per device IF TC = 100 °C VALUES UNITS 600 V 15 30 Single pulse forward current IFSM 150 Maximum repetitive forward current IFRM 60 Maximum power dissipation Operating junction and storage temperature range Document Number: 94068 Revision: 23-May-11 PD TJ, TStg TC = 25 °C 74 TC = 100 °C 29 - 55 to + 150 A W °C For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30PA60CPbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 2 x 15 A ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 µA IF = 15 A Maximum forward voltage VFM IF = 30 A See fig. 1 IF = 15 A, TJ = 125 °C VR = VR rated Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 MIN. TYP. MAX. 600 - - - 1.3 1.7 - 1.5 2.0 - 1.2 1.6 UNITS V - 1.0 10 - 400 1000 - 25 50 pF - 12 - nH µA DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 10 SYMBOL TEST CONDITIONS MIN. TYP. MAX. trr IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 19 - trr1 TJ = 25 °C - 42 60 trr2 TJ = 125 °C - 70 120 IRRM1 TJ = 25 °C - 4.0 6.0 IRRM2 TJ = 125 °C - 6.5 10 Reverse recovery charge See fig. 7 Qrr1 TJ = 25 °C Qrr2 TJ = 125 °C Peak rate of fall of recovery current during tb See fig. 8 dI(rec)M/dt1 dI(rec)M/dt2 Peak recovery current See fig. 6 IF = 15 A dIF/dt = 200 A/µs VR = 200 V UNITS ns A - 80 180 - 220 600 TJ = 25 °C - 250 - TJ = 125 °C - 160 - MIN. TYP. MAX. UNITS - - 300 °C - - 1.7 - - 0.85 nC A/µs THERMAL-MECHANICAL SPECIFICATIONS PER LEG PARAMETER Lead temperature Junction to case, single leg conduction Junction to case, both legs conducting SYMBOL Tlead TEST CONDITIONS 0.063” from case (1.6 mm) for 10 s RthJC K/W Thermal resistance, junction to ambient RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.25 - - 6.0 - g - 0.21 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) Weight Mounting torque Marking device www.vishay.com 2 Case style TO-247AC (JEDEC) HFA30PA60C For technical questions within your region, please contact one of the following: Document Number: 94068 [email protected], [email protected], [email protected] Revision: 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30PA60CPbF IF - Instantaneous Forward Current (A) HEXFRED® Vishay Semiconductors Ultrafast Soft Recovery Diode, 2 x 15 A 100 10 000 IR - Reverse Current (µA) TJ = 150 °C TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1000 100 TJ = 125 °C 10 1 0.1 TJ = 25 °C 1 1.0 0.01 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 VFM - Forward Voltage Drop (V) 94068_01 100 200 300 400 500 600 VR - Reverse Voltage (V) 94068_02 Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current (Per Leg) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 0 94068_03 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) ZthJC - Thermal Response 10 1 PDM D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 Single pulse (thermal response) 0.01 0.00001 94068_04 0.0001 0.001 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Document Number: 94068 Revision: 23-May-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30PA60CPbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 2 x 15 A 100 800 IF = 30 A IF = 15 A IF = 5.0 A 80 VR = 200 V TJ = 125 °C TJ = 25 °C 60 Qrr (nC) trr (ns) 600 40 20 0 100 0 100 1000 dIF/dt (A/µs) Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) 25 VR = 200 V TJ = 125 °C TJ = 25 °C IF = 30 A IF = 15 A IF = 5.0 A dI(rec)M/dt (A/µs) IRR (A) 10 000 15 10 5 1000 dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg) www.vishay.com 4 1000 IF = 30 A IF = 15 A IF = 5.0 A VR = 200 V TJ = 125 °C TJ = 25 °C 0 100 94068_06 1000 dIF/dt (A/µs) 94068_07 Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) 20 400 200 VR = 200 V TJ = 125 °C TJ = 25 °C 94068_05 IF = 30 A IF = 15 A IF = 5.0 A 100 100 94068_08 1000 dIF/dt (A/µs) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg) For technical questions within your region, please contact one of the following: Document Number: 94068 [email protected], [email protected], [email protected] Revision: 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30PA60CPbF HEXFRED® Vishay Semiconductors Ultrafast Soft Recovery Diode, 2 x 15 A VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94068 Revision: 23-May-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA30PA60CPbF HEXFRED® Ultrafast Soft Recovery Diode, 2 x 15 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- HF A 30 PA 60 C PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Electron irradiated 4 - Current rating (30 = 30 A) 5 - PA = TO-247AC 6 - Voltage rating: (60 = 600 V) 7 - Circuit configuration C = Common cathode 8 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95223 Part marking information www.vishay.com/doc?95226 SPICE model www.vishay.com/doc?95182 www.vishay.com 6 For technical questions within your region, please contact one of the following: Document Number: 94068 [email protected], [email protected], [email protected] Revision: 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) Ø P E B (2) R/2 N A2 S (Datum B) Ø K M DBM FP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M Planting (4) E1 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e FK L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1