SanRex DD200GB Diode module Datasheet

DIODE MODULE
DD200GB
UL;E76102
(M)
Power Diode Module DD200GB series are designed for various rectifier circuits.
DD200GB has two diode two diode chips connecected in series and the mounting base is
electrically isolated from elements for simple heatsink construction. Wide voltage rating
up to 800V is available for various input voltages.
92±0.5
12
26
26
4-φ6(M5)
mounting base
elements in a package for simple(single and three phase)bridge
connections
● Highly reliable glass passivated chips
● High surge current capability
60±0.5
48±0.3
24
● Isolated
● Two
18
2
R8.0
M8×14
5 2
42max
34max
(Applications)
Various rectifiers, Battery chargers, DC motor drives
DD
80±0.3
1
2
3
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
Ratings
Item
Symbol
Unit:㎜
DD200GB40
DD200GB80
Unit
VRRM
Repetitive Peak Reverse Voltage
400
800
V
VRSM
Non-Repetitive Peak Reverse Voltage
480
960
V
Symbol
IF(AV)
Item
Conditions
Ratings
Average Forward Current
Single phase, half wave, 180℃conduction, Tc: 96℃
IF(RMS)
R.M.S. Forward Current
Single phase, half wave, 180℃conduction, Tc: 96℃
IFSM
Surge Forward Current
1
/
It
It
Value for one cycle of surge current
Tj
2 cycle, 50/60HZ, peak value, non-repetitive
Unit
200
A
310
A
A
5000/5500
125000
A2S
Operating Junction Temperature
−40 to +150
℃
Tstg
Storage Temperature
−40 to +125
℃
VISO
Isolation Breakdown Voltage(R.M.S.) A.C. 1 minute
2500
V
Mounting(M5)
Recommended Value 1.5-2.5(15-25)
2.7(28)
Terminal(M8)
Recommended Value 8.8-10 (90-105)
2
2
Mounting
Torque
Mass
Typical Value
N・m
11(115) (㎏f・B)
510
■Electrical Characteristics
g
(Tj=25℃ unless otherwise specified)
Symbol
Item
IRRM
Repetitive Peak Reverse Current, max.
at VRRM. Single phase, half wave, Tj=150℃
VFM
Forward Voltage Drop, max.
Forward current 600A, Tj=25℃, Inst measurement
Junction to case (Per a half module)
0.18
℃/W
Rth(j-c) Thermal Impedance, max.
SanRex
Conditions
Ratings
Unit
50
mA
1.40
V
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]
DD200GB
500
Average Forward Current vs.
Power Dissipation
Power Dissipation Pav(W)
Forward Current I(A)
F
2
Maximum Forward Characteristics
103
D.C.
400
5
Single Phase
300
Per one element
2
Tj=25℃〜150℃
102
Three Phase
200
5
Per one element
100
2
101
0
1.
0
1.
5
2.
5
2.
0
0
0
3.
0
50
Average Forward Current vs.
Allowable Case Temperature
6000
Surge Forward Current I(A)
F
Allowable Case Temperature Tc(℃)
150
140
130
Per one element
120
110
100
90
80
70
Three Phase Single Phase
D.C.
60
50
0
50
100
150
200
250
100
150
Transient Thermal Impedance θj-c(℃/W)
250
300
350
300
Cycle Surge Forward Current Rating
(Non-Repetitive)
Per one element
5000
4000
60Hz
3000
50Hz
2000
T
j=25℃ start
1000
0
100
350
2
101
5
Average Forward Current I(A)
F
0.
2
200
Average Forward Current I(A)
F
Forward Voltage Drop V(V)
F
2
5
102
Time(Cycles)
Transient Thermal Impedance
0.
1
Maximum
Junction to Case
Per one element
5 100 2
5 101
B2;Two Pluse Bridge
connection
B2
90
Id(Aav.)
1000
100
Rth
(f-a)
:Thermal resistance
between fin and ambient
800
Rth:0.5C/W
Rth:0.4C/W
Rth:0.3C/W
Rth:0.2C/W
Rth:0.1C/W
Rth:0.05C/W
600
400
110
120
130
200
140
Conduction Angle180
0
0 100 200 300 400 0
150
25 50 75 100 125 150
Output Current(A) Ambient Temperature(℃)
1750
Output Current
B6;Six pulse Bridge
connection
80
B6
90
1500
Rth
(f-a)
:Thermal resistance
between fin and
B6
ambient
Id(Aav.)
1250
Rth:0.5C/W
Rth:0.4C/W
Rth:0.3C/W
Rth:0.2C/W
Rth:0.1C/W
Rth:0.05C/W
1000
750
500
250
100
110
120
130
140
Conduction Angle180
0
0
250
500 0
150
25 50 75 100 125 150
Allowable Case Temperature(℃)
Output Current
5 10-1 2
Time t(sec)
Total Power Dissipation(W)
Total Power Dissipation(W)
1200
5 10-2 2
Allowable Case Temperature(℃)
0
10-3 2
Output Current(A) Ambient Temperature(℃)
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]
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