GE BAW75 Small-signal diode Datasheet

BAW75 and BAW76
Small-Signal Diodes
DO-204AH (DO-35 Glass)
t
c
u
rod
P
New
Features
• Silicon Epitaxial Planar Diodes
• Fast switching diodes.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging Codes/Options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape (52mm tape), 20K/box
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics
Parameter
(TA = 25°C unless otherwise noted)
Symbol
Value
Unit
Reverse Voltage
BAW75
BAW76
VR
25
50
V
Peak Reverse Voltage
BAW75
BAW76
VRM
35
75
V
Rectified Current (Average)
Half Wave Rectification with Resistive Load
at TA = 25°C and f ≥ 50 Hz
IO
150(1)
mA
Surge Forward Current at t < 1µs, Tj = 25°C
IFSM
2
A
Power Dissipation at TA = 25°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Ptot
RΘJA
(1)
mW
(1)
°C/W
500
0.35
Tj
200
°C
TS
–65 to +200
°C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
5/2/00
BAW75 and BAW76
Small-Signal Diodes
Electrical Characteristics
Parameter
(TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Typ
Max
Unit
VF
at IF = 30mA
at IF = 100mA
—
—
—
—
1
1
V
—
—
—
—
—
—
—
—
100
100
100
100
nA
µA
nA
µA
Forward Voltage
BAW75
BAW76
Leakage Current
BAW75
BAW75
BAW76
BAW76
IR
VR = 25V
VR = 25V, Tj = 150°C
VR = 50V
VR = 50V, Tj = 150°C
Reverse Breakdown Voltage
BAW75
BAW76
V(BR)R
tested with 5µA pulses
35
75
—
—
—
—
V
Capacitance
BAW75
BAW76
Ctot
VF = VR = 0V
—
—
—
—
4
2
pF
IF = 10mA, IR = 10mA
Irr = 1mA
—
—
4
IF = 10mA, IR = 1mA
VR = 6V, RL = 100Ω
—
Reverse Recovery Time
trr
ns
—
2
BAW75 and BAW76
Small-Signal Diodes
Ratings and
Characteristics
(TA = 25°C unless otherwise noted)
BAW75, BAW76
BAW75, BAW76
BAW75, BAW76
BAW75, BAW76
°
BAW75 and BAW76
Small-Signal Diodes
Ratings and
Characteristics
(TA = 25°C unless otherwise noted)
BAW75
BAW76
BAW75, BAW76
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