Microsemi APT56F50L N-channel fredfet Datasheet

APT56F50B2
APT56F50L
500V, 56A, 0.10Ω Max, trr ≤280ns
N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
T-Max®
APT56F50B2
TO-264
APT56F50L
Single die FREDFET
D
G
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI
• ZVS phase shifted and other full bridge
• Low trr for high reliability
• Half bridge
• Ultra low Crss for improved noise immunity
• PFC and other boost converter
• Low gate charge
• Buck converter
• Avalanche energy rated
• Single and two switch forward
• RoHS compliant
• Flyback
Absolute Maximum Ratings
Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
56
Continuous Drain Current @ TC = 100°C
35
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
1200
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
28
A
1
175
Thermal and Mechanical Characteristics
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
780
RθJC
Junction to Case Thermal Resistance
0.16
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG
Operating and Storage Junction Temperature Range
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
Torque
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
Microsemi Website - http://www.microsemi.com
0.11
-55
150
300
°C/W
°C
0.22
oz
6.2
g
10
in·lbf
1.1
N·m
3-2007
Typ
Rev A
Min
Characteristic
050-8129
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
500
∆VBR(DSS)/∆TJ
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
∆VGS(th)/∆TJ
VGS = 10V, ID = 28A
3
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
Forward Transconductance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
5
Effective Output Capacitance, Energy Related
Qg
Total Gate Charge
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
dv/dt
Min
Typ
Max
43
8800
120
945
µA
nA
Unit
S
pF
550
275
220
50
100
38
45
100
33
VGS = 0 to 10V, ID = 28A,
VDS = 250V
Resistive Switching
VDD = 333V, ID = 28A
RG = 4.7Ω 6 , VGG = 15V
Current Fall Time
Source-Drain Diode Characteristics
ISM
0.10
5
Unit
V
V/°C
Ω
V
mV/°C
VGS = 0V, VDS = 0V to 333V
Qgs
IS
0.60
0.085
4
-10
250
1000
±100
f = 1MHz
Co(er)
Symbol
TJ = 125°C
VGS = 0V, VDS = 25V
Effective Output Capacitance, Charge Related
tf
VGS = 0V
Test Conditions
VDS = 50V, ID = 28A
4
td(off)
TJ = 25°C
Max
TJ = 25°C unless otherwise specified
Co(cr)
tr
VDS = 500V
Typ
VGS = ±30V
Parameter
gfs
3
VGS = VDS, ID = 2.5mA
Threshold Voltage Temperature Coefficient
IDSS
Symbol
Reference to 25°C, ID = 250µA
Breakdown Voltage Temperature Coefficient
RDS(on)
APT56F50B2_L
Peak Recovery dv/dt
Test Conditions
Min
Typ
D
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
1.0
280
520
TJ = 25°C
TJ = 125°C
TJ = 125°C
VDD = 100V
TJ = 25°C
Unit
A
S
TJ = 25°C
Max
175
ISD = 28A, TJ = 25°C, VGS = 0V
diSD/dt = 100A/µs
ns
38
G
ISD = 28A 3
nC
TJ = 125°C
ISD ≤ 28A, di/dt ≤1000A/µs, VDD = 333V,
TJ = 125°C
1.20
3.07
10.1
14.5
V
ns
µC
A
20
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
050-8129
Rev A
3-2007
2 Starting at TJ = 25°C, L = 3.06mH, RG = 4.7Ω, IAS = 28A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -2.04E-7/VDS^2 + 4.76E-8/VDS + 1.36E-10.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
200
V
GS
= 10V
TJ = -55°C
120
TJ = 25°C
80
40
TJ = 150°C
70
6V
60
50
40
5.5V
30
20
5V
10
TJ = 125°C
0
25
20
15
10
5
0
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
2.5
0
NORMALIZED TO
VGS = 10V @ 28A
VDS> ID(ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
150
2.0
1.5
1.0
0.5
30
25
20
15
10
5
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
175
ID, DRAIN CURRENT (A)
125
TJ = -55°C
100
TJ = 25°C
75
TJ = 125°C
50
25
0
0
25 50 75 100 125 150
0
-55 -25
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
70
0
10
8
6
4
2
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
20,000
60
C, CAPACITANCE (pF)
TJ = 25°C
50
Ciss
10,000
TJ = -55°C
TJ = 125°C
40
30
20
1000
Coss
100
Crss
10
500
400
300
200
100
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
12
VDS = 100V
10
VDS = 250V
8
6
VDS = 400V
4
2
50 100 150 200 250 300 350
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
0
0
175
ID = 28A
14
0
10
50
150
125
100
TJ = 25°C
75
TJ = 150°C
50
25
0
1.0 1.2 1.4
0.6 0.8
0.2 0.4
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
0
3-2007
VGS, GATE-TO-SOURCE VOLTAGE (V)
16
40
30
20
10
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
Rev A
0
ISD, REVERSE DRAIN CURRENT (A)
0
050-8129
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
= 7 & 10V
GS
6.5V
Figure 1, Output Characteristics
gfs, TRANSCONDUCTANCE
V
J
80
ID, DRIAN CURRENT (A)
ID, DRAIN CURRENT (A)
T = 125°C
90
160
0
APT56F50B2_L
100
APT56F50B2_L
250
250
100
100
I
I
DM
13µs
100µs
1ms
Rds(on)
10ms
100ms
DC line
1
TJ = 125°C
TC = 75°C
1
13µs
100µs
10
1ms
10ms
Rds(on)
0.1
100ms
DC line
TJ = 150°C
TC = 25°C
1
Scaling for Different Case & Junction
Temperatures:
ID = ID(T = 25 C)*(TJ - TC)/125
°
C
600
100
10
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
600
100
10
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
TJ (°C)
1
TC (°C)
0.0337
0.0687
0.0575
Dissipated Power
(Watts)
0.000713
0.0189
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
ZEXT
10
0.1
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
DM
0.527
Figure 11, Transient Thermal Impedance Model
0.16
D = 0.9
0.14
0.7
0.12
0.10
0.5
Note:
0.08
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.18
0.3
0.06
t2
SINGLE PULSE
0.1
0.05
0.04
t1 = Pulse Duration
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.02
0
t1
10-1
10-2
10-3
RECTANGULAR PULSE DURATION (seconds)
Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
10-4
10-5
T-MAX® (B2) Package Outline
TO-264 (L) Package Outline
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
Drain
20.80 (.819)
21.46 (.845)
3-2007
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
050-8129
Rev A
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
1.0
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