APT56F50B2 APT56F50L 500V, 56A, 0.10Ω Max, trr ≤280ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. T-Max® APT56F50B2 TO-264 APT56F50L Single die FREDFET D G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 56 Continuous Drain Current @ TC = 100°C 35 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1200 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 28 A 1 175 Thermal and Mechanical Characteristics Max Unit W PD Total Power Dissipation @ TC = 25°C 780 RθJC Junction to Case Thermal Resistance 0.16 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com 0.11 -55 150 300 °C/W °C 0.22 oz 6.2 g 10 in·lbf 1.1 N·m 3-2007 Typ Rev A Min Characteristic 050-8129 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 500 ∆VBR(DSS)/∆TJ Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ VGS = 10V, ID = 28A 3 Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance 5 Effective Output Capacitance, Energy Related Qg Total Gate Charge Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time Current Rise Time Turn-Off Delay Time VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Min Typ Max 43 8800 120 945 µA nA Unit S pF 550 275 220 50 100 38 45 100 33 VGS = 0 to 10V, ID = 28A, VDS = 250V Resistive Switching VDD = 333V, ID = 28A RG = 4.7Ω 6 , VGG = 15V Current Fall Time Source-Drain Diode Characteristics ISM 0.10 5 Unit V V/°C Ω V mV/°C VGS = 0V, VDS = 0V to 333V Qgs IS 0.60 0.085 4 -10 250 1000 ±100 f = 1MHz Co(er) Symbol TJ = 125°C VGS = 0V, VDS = 25V Effective Output Capacitance, Charge Related tf VGS = 0V Test Conditions VDS = 50V, ID = 28A 4 td(off) TJ = 25°C Max TJ = 25°C unless otherwise specified Co(cr) tr VDS = 500V Typ VGS = ±30V Parameter gfs 3 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS Symbol Reference to 25°C, ID = 250µA Breakdown Voltage Temperature Coefficient RDS(on) APT56F50B2_L Peak Recovery dv/dt Test Conditions Min Typ D MOSFET symbol showing the integral reverse p-n junction diode (body diode) 1.0 280 520 TJ = 25°C TJ = 125°C TJ = 125°C VDD = 100V TJ = 25°C Unit A S TJ = 25°C Max 175 ISD = 28A, TJ = 25°C, VGS = 0V diSD/dt = 100A/µs ns 38 G ISD = 28A 3 nC TJ = 125°C ISD ≤ 28A, di/dt ≤1000A/µs, VDD = 333V, TJ = 125°C 1.20 3.07 10.1 14.5 V ns µC A 20 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 050-8129 Rev A 3-2007 2 Starting at TJ = 25°C, L = 3.06mH, RG = 4.7Ω, IAS = 28A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -2.04E-7/VDS^2 + 4.76E-8/VDS + 1.36E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 200 V GS = 10V TJ = -55°C 120 TJ = 25°C 80 40 TJ = 150°C 70 6V 60 50 40 5.5V 30 20 5V 10 TJ = 125°C 0 25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 2.5 0 NORMALIZED TO VGS = 10V @ 28A VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 150 2.0 1.5 1.0 0.5 30 25 20 15 10 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 175 ID, DRAIN CURRENT (A) 125 TJ = -55°C 100 TJ = 25°C 75 TJ = 125°C 50 25 0 0 25 50 75 100 125 150 0 -55 -25 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 70 0 10 8 6 4 2 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 60 C, CAPACITANCE (pF) TJ = 25°C 50 Ciss 10,000 TJ = -55°C TJ = 125°C 40 30 20 1000 Coss 100 Crss 10 500 400 300 200 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 100V 10 VDS = 250V 8 6 VDS = 400V 4 2 50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0 175 ID = 28A 14 0 10 50 150 125 100 TJ = 25°C 75 TJ = 150°C 50 25 0 1.0 1.2 1.4 0.6 0.8 0.2 0.4 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 0 3-2007 VGS, GATE-TO-SOURCE VOLTAGE (V) 16 40 30 20 10 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current Rev A 0 ISD, REVERSE DRAIN CURRENT (A) 0 050-8129 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE = 7 & 10V GS 6.5V Figure 1, Output Characteristics gfs, TRANSCONDUCTANCE V J 80 ID, DRIAN CURRENT (A) ID, DRAIN CURRENT (A) T = 125°C 90 160 0 APT56F50B2_L 100 APT56F50B2_L 250 250 100 100 I I DM 13µs 100µs 1ms Rds(on) 10ms 100ms DC line 1 TJ = 125°C TC = 75°C 1 13µs 100µs 10 1ms 10ms Rds(on) 0.1 100ms DC line TJ = 150°C TC = 25°C 1 Scaling for Different Case & Junction Temperatures: ID = ID(T = 25 C)*(TJ - TC)/125 ° C 600 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 600 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area TJ (°C) 1 TC (°C) 0.0337 0.0687 0.0575 Dissipated Power (Watts) 0.000713 0.0189 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. ZEXT 10 0.1 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) DM 0.527 Figure 11, Transient Thermal Impedance Model 0.16 D = 0.9 0.14 0.7 0.12 0.10 0.5 Note: 0.08 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.18 0.3 0.06 t2 SINGLE PULSE 0.1 0.05 0.04 t1 = Pulse Duration t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.02 0 t1 10-1 10-2 10-3 RECTANGULAR PULSE DURATION (seconds) Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 10-4 10-5 T-MAX® (B2) Package Outline TO-264 (L) Package Outline e3 100% Sn Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 3-2007 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 21.39 (.842) Gate Drain 050-8129 Rev A Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 2.29 (.090) 2.69 (.106) Gate Drain Source 1.0