MBR1635 thru MBR16150 Pb MBR1635 thru MBR16150 Pb Free Plating Product 16.0 Ampere Heatsink Type Single Schottky Barrier Rectifiers TO-220AC/TO-220-2L Features ※ Low L power lloss, hi high h efficiency ffi i ※ Guardring for overvoltage protection ※ High surge current capability ※ Compliant to RoHS Directive 2011/65/EU and WEEE 2002/96/EC ※ Halogen-free according to IEC 61249-2-21 definition(Order Note) Unit:inch(mm) .419(10.66) .387(9.85) .196(5.00) .163(4.16) .139(3.55) MIN .054(1.39) .038(0.96) .019(0.50) Mechanical Data ※ Case: Heat sink TO-220AC ※ Epoxy: UL 94V-0 rate flame retardant ※ Terminals: Solderable per MIL-STD-202 method 208 ※ Polarity: As marked on diode body ※ Mounting position: Any ※ Weight: 2.0 gram approximately .1(2.54) .177(4.5)MAX .624(15.87) .548(13.93) Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power Supply,Motor Control,UPS and SMPS etc. .50(12.7)MIN .269(6.85) .226(5.75) .045(1.15) .025(0.65)MAX .1(2.54) MAXIMUM CHARACTERISTICS unless otherwise U RATINGS GS AND ELECTRICAL C C C C S CS ((TA=25℃ 5℃ u ess o e se noted) o ed) PARAMETER SYMBOL MBR1635 MBR1645 MBR1650 MBR1660 MBR1690 Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 V Maximum RMS voltage VRMS 24 31 35 42 63 70 105 V Maximum DC blocking voltage VDC 35 45 50 60 90 100 150 V Maximum average forward rectified current IF(AV) 16 A Peak repetitive forward current (Rated VR, Square Wave, 20KHz) IFRM 32 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Peak repetitive reverse surge current (Note 1) IRRM 1.0 Maximum instantaneous forward voltage (Note 2) IF=16A, TJ=25℃ IF=16A, TJ=125℃ VF 0.63 0.57 0.75 0.65 0.85 0.75 0.95 0.92 V Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ IR 0.5 15 0.5 10 0.3 7.5 0.1 5 mA Voltage rate of change (Rated VR) dV/dt 10000 V/μs Typical thermal resistance RθJC 3 ℃/W Operating junction temperature range TJ - 55 to +150 ℃ St Storage temperature t t range TSTG - 55 tto +150 150 ℃ MBR16100 MBR16150 0.5 UNIT A Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Rev.07C © 2006 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com/ MBR1635 thru MBR16150 RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) FIG.1- FORWARD CURRENT DERATING CURVE FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 16 12 8 RESISTIVE OR INDUCTIVE LOAD WITH HEATSINK 4 0 0 50 100 CASE TEMPERATURE 350 PEAK FORWARD SURGE CURRENT (A) AVERAGE FORWARD CURRENT (A) 20 150 300 8.3ms Single Half Sine Wave JEDEC Method 250 200 150 100 50 1 10 100 NUMBER OF CYCLES AT 60 Hz (oC) FIG. 4- TYPICAL REVERSE CHARACTERISTICS FIG. 3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) 100 TJ=125℃ 10 Pulse Width=300μs 1% Duty Cycle 1 TJ=25℃ 0.1 MBR1635-MBR1645 MBR1650-MBR1660 MBR1690-MBR16150 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 10 TJ=125℃ 1 TJ=25℃ 0.1 0.01 MBR1635-MBR1645 MBR1650-MBR16150 0.001 0 1.1 1.2 FORWARD VOLTAGE (V) FIG. 5- TYPICAL JUNCTION CAPACITANCE 40 60 80 100 120 140 FIG. 6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS 10000 100 f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A 20 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 1000 100 1 0.1 0.1 1 10 REVERSE VOLTAGE (V) Rev.07C © 2006 Thinki Semiconductor Co., Ltd. 100 0.01 0.1 1 10 100 T-PULSE DURATION. (sec) Page 2/2 http://www.thinkisemi.com/