Cascadable Silicon Bipolar MMIC␣ Amplifiers Technical Data MSA-0335, -0336 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 2.7 GHz • 12.0 dB Typical Gain at 1.0␣ GHz • 10.0 dBm Typical P1 dB at 1.0␣ GHz • Unconditionally Stable (k>1) • Cost Effective Ceramic Microstrip Package Description The MSA-0335 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Available in cut lead version (package 36) as MSA-0336. Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block C block 3 IN 1 2 5965-9568E OUT MSA Vd = 5 V 6-302 35 micro-X Package[1] Note: 1. Short leaded 36 package available upon request. MSA-0335, -0336 Absolute Maximum Ratings Absolute Maximum[1] Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature[4] 80 mA 425 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,5]: θjc = 150°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 6.7 mW/°C for TC > 136°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω GP Power Gain (|S21| 2) f = 0.1 GHz ∆GP Gain Flatness f = 0.1 to 1.6 GHz f3 dB 3 dB Bandwidth VSWR Units Min. Typ. Max. dB 11.5 12.5 13.5 dB ± 0.6 ± 1.0 GHz 2.7 Input VSWR f = 0.1 to 3.0 GHz 1.6:1 Output VSWR f = 0.1 to 3.0 GHz 1.7:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 10.0 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 6.0 IP3 Third Order Intercept Point f = 1.0 GHz dBm 23.0 tD Group Delay f = 1.0 GHz psec 125 Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/°C 4.5 5.0 5.5 –8.0 Notes: 1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current is on the following page. MSA-0335, -0336 Part Number Ordering Information Part Number MSA-0335 MSA-0336-BLK MSA-0336-TR1 No. of Devices 10 100 1000 Container Strip Antistatic Bag 7" Reel For more information, see “Tape and Reel Packaging for Semiconductor Devices.” 6-303 MSA-0335, -0336 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA) S21 S11 Freq. GHz Mag 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 .05 .05 .04 .04 .03 .02 .03 .08 .14 .21 .27 .31 .37 .51 S12 S22 Ang dB Mag Ang dB Mag Ang Mag Ang 177 170 161 156 149 154 –104 –136 –157 –176 170 157 125 87 12.6 12.5 12.5 12.4 12.2 12.1 11.6 10.9 10.0 9.0 7.9 6.9 4.9 2.8 4.25 4.24 4.20 4.15 4.09 4.02 3.79 3.49 3.16 2.81 2.49 2.20 1.76 1.38 175 170 160 151 142 132 109 87 71 53 36 20 –10 –38 –18.6 –18.3 –18.3 –18.3 –17.9 –17.6 –16.8 –15.7 –14.9 –14.6 –13.9 –13.6 –12.9 –12.8 .118 .121 .122 .121 .128 .131 .145 .164 .180 .187 .202 .209 .226 .230 1 2 3 5 8 9 13 11 13 8 4 –1 –12 –25 .17 .17 .17 .18 .19 .20 .20 .21 .23 .24 .25 .24 .20 .22 –8 –17 –33 –47 –61 –73 –102 –133 –155 –173 178 177 165 130 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) 14 12 Gain Flat to DC 14 TC = +125°C 50 TC = +25°C TC = –55°C 12 8 6 G p (dB) 40 I d (mA) G p (dB) 10 60 30 0 0 0.1 0.3 0.5 1.0 3.0 6.0 0.1 GHz 0.5 GHz 1.0 GHz 2.0 GHz 6 10 2 4 0 1 2 FREQUENCY (GHz) 3 4 5 6 15 20 25 Vd (V) Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 35 mA. 35 40 50 Figure 3. Power Gain vs. Current. 7.0 18 13 30 I d (mA) Figure 2. Device Current vs. Voltage. 12 15 11 P1 dB 9 8 7 6.5 P1 dB (dBm) 10 12 I d = 50 mA NF (dB) GP 11 P1 dB (dBm) G p (dB) 8 20 4 NF (dB) 10 9 I d = 35 mA 6.0 6 5.5 6 I d = 20 mA I d = 35 mA I d = 50 mA 3 NF 5 4 –55 –25 +25 +85 +125 I d = 20 mA 0 0.1 0.2 0.3 5.0 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 4.0 TEMPERATURE (°C) FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Mounting Surface Temperature, f=1.0 GHz, Id = 35 mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 6-304 35 micro-X Package Dimensions .085 2.15 4 GROUND .083 DIA. 2.11 RF OUTPUT AND BIAS A03 RF INPUT 1 3 .020 .508 2 .057 ± .010 1.45 ± .25 .022 .56 GROUND .100 2.54 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .455 ± .030 11.54 ± .75 .006 ± .002 .15 ± .05 6-305