SemiHow HFW10N60S 600v n-channel mosfet Datasheet

BVDSS = 600 V
RDS(on) typ ȍ
HFW10N60S
ID = 9.5 A
600V N-Channel MOSFET
D2-PAK
D
FEATURES
G
‰ Originative New Design
S
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
1.Gate 2. Drain 3. Source
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 29 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
TC=25୅ unless otherwise specified
Parameter
Value
Units
600
V
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25ଇ)
9.5
A
Drain Current
– Continuous (TC = 100ଇ)
5.7
A
IDM
Drain Current
– Pulsed
38
A
VGS
Gate-Source Voltage
ρ30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
700
mJ
IAR
Avalanche Current
(Note 1)
9.5
A
EAR
Repetitive Avalanche Energy
(Note 1)
15.6
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TA = 25ଇ) *
3.13
W
Power Dissipation (TC = 25ଇ)
- Derate above 25ଇ
156
W
1.25
W/ଇ
-55 to +150
ଇ
300
ଇ
(Note 1)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Typ.
Max.
RșJC
Symbol
Junction-to-Case
Parameter
--
0.8
RșJA
Junction-to-Ambient*
--
40
RșJA
Junction-to-Ambient
--
62.5
Units
ഒ:
* When mounted on the minimum pad size recommended (PCB Mount)
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HFW10N60S
July 2016
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ͑
2.0
--
4.0
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 4.75 A͑
--
0.67
0.8
‫͑ש‬
600
--
--
V
ID = 250 ᒺ, Referenced to25୅
--
0.7
--
·͠ఁ͑
VDS = 600 V, VGS = 0 V͑
--
--
1
Ꮃ͑
VDS = 480 V, TC = 125ఁ͑
--
--
10
Ꮃ͑
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ԩBVDSS Breakdown Voltage Temperature
Coefficient
/ԩTJ
IDSS
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 Ꮃ͑
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
Ꮂ͑
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
Ꮂ͑
--
1450
1885
Ꮔ͑
--
145
190
Ꮔ͑
--
13
17
Ꮔ͑
--
23
55
Ꭸ͑
--
69
150
Ꭸ͑
--
144
300
Ꭸ͑
--
77
165
Ꭸ͑
--
29
38
Οʹ͑
--
6.8
--
Οʹ͑
--
10.3
--
Οʹ͑
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz͑
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 300 V, ID = 9.5 A,
RG = 25 ‫͑ש‬
͑
(Note 4,5)
VDS = 480V, ID = 9.5 A,
VGS = 10 V
(Note 4,5)
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
9.5
ISM
Pulsed Source-Drain Diode Forward Current
--
--
38
VSD
Source-Drain Diode Forward Voltage
IS = 9.5 A, VGS = 0 V
--
--
1.4
V
trr
Reverse Recovery Time
--
420
--
Ꭸ͑
Qrr
Reverse Recovery Charge
IS = 9.5 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
4.2
--
ȝ&
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=14.2mH, IAS=9.5A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝ͻΦΝΪ͑ͣͧ͑͢͡
HFW10N60S
Electrical Characteristics TC=25 qC
HFW10N60S
ID, Drain Current [A]
ID, Drain Current [A]
Typical Characteristics
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
IDR, Reverse Drain Current [A]
RDS(ON)[:],
Drain-Source On-Resistance
2.0
VGS = 10V
1.5
1.0
VGS = 20V
0.5
* Note : TJ = 25oC
0.0
0
5
10
15
20
25
30
35
ID, Drain Current[A]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Ciss
Capacitances [pF]
2500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2000
Coss
1500
Note ;
1. VGS = 0 V
2. f = 1 MHz
1000
Crss
500
12
VGS, Gate-Source Voltage [V]
3000
VDS = 120V
10
VDS = 300V
VDS = 480V
8
6
4
2
* Note : ID = 9.5A
0
10-1
100
101
0
0
4
8
12
16
20
24
28
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
32
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝ͻΦΝΪ͑ͣͧ͑͢͡
HFW10N60S
Typical Characteristics
(continued)
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
2.5
2.0
1.5
1.0
0.5
Note :
1. VGS = 10 V
2. ID = 4.75 A
0.0
-100
-50
0
100 Ps
1 ms
10 ms
100 ms
ID, Drain Current [A]
* Notes :
1. TC = 25 oC
6
4
2
2. TJ = 150 oC
3. Single Pulse
101
102
0
25
103
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
100
D=0.5
ZTJC(t), Thermal Response
ID, Drain Current [A]
8
DC
10-2
100
200
10 Ps
101
10-1
150
10
Operation in This Area
is Limited by R DS(on)
100
100
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
102
50
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
0.2
10-1
* Notes :
1. ZTJC(t) = 0.8 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.1
0.05
0.02
0.01
10-2
PDM
single pulse
t1
10-5
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝ͻΦΝΪ͑ͣͧ͑͢͡
HFW10N60S
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝ͻΦΝΪ͑ͣͧ͑͢͡
HFW10N60S
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
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HFW10N60S
Package Dimension
kYTwhrG
O{vTY]ZPG
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