IRLH5036PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 4.5V) Qg (typical) RG (typical) ID (@Tmb = 25°C) 60 V 5.5 mΩ 44 1.2 nC Ω h 100 A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon (< 5.5 mΩ @ Vgs = 4.5V ) Low Thermal Resistance to PCB (< 0.8°C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Lower Conduction Losses Enables better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number Package Type IRLH5036TRPbF IRLH5036TR2PbF PQFN 5mm x 6mm PQFN 5mm x 6mm results in ⇒ Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ Tmb = 25°C ID @ Tmb = 100°C IDM PD @TA = 25°C PD @ Tmb = 25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range g g c g Max. 60 ± 16 20 16 100 100 Units V h h A 400 3.6 160 W 0.029 -55 to + 150 W/°C °C Notes through are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 20, 2015 IRLH5036PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ RDS(on) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Min. 60 ––– ––– ––– 1.0 ––– ––– ––– ––– ––– 109 ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.07 3.7 4.6 ––– -6.6 ––– ––– ––– ––– ––– 90 44 9.5 4.5 18 12 23 21 1.2 VGS(th) ΔVGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS td(on) tr td(off) tf Ciss Coss Crss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– 23 48 28 15 5360 600 250 Max. ––– ––– 4.4 5.5 2.5 ––– 20 250 100 -100 ––– ––– 66 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units V V/°C mΩ V mV/°C μA nA S nC nC nC Ω ns pF Conditions VGS = 0V, ID = 250uA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 50A VGS = 4.5V, ID = 50A e e VDS = VGS, ID = 150μA VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V VDS = 25V, ID = 50A VGS = 10V, VDS = 30V, ID = 50A VDS = 30V VGS = 4.5V ID = 50A VDS = 16V, VGS = 0V VDD = 30V, VGS = 4.5V ID = 50A RG =1.7Ω VGS = 0V VDS = 25V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR c Typ. ––– ––– d Units mJ A Max. 286 50 Diode Characteristics IS Parameter Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time c Min. Typ. Max. ––– ––– 100 ––– ––– ––– ––– ––– Time is h 400 Units A Conditions MOSFET symbol D showing the integral reverse G p-n junction diode. ––– 1.3 V TJ = 25°C, IS = 50A, VGS = 0V TJ = 25°C, IF = 50A, VDD = 30V 28 42 ns di/dt = 500A/μs 134 201 nC dominated by parasitic Inductance S e e Thermal Resistance Parameter RθJ-mb RθJC (Top) RθJA RθJA (<10s) 2 Junction-to-Mounting Base Junction-to-Case Junction-to-Ambient Junction-to-Ambient f g g www.irf.com © 2015 International Rectifier Submit Datasheet Feedback Typ. 0.5 ––– ––– ––– Max. 0.8 15 35 22 Units °C/W May 20, 2015 IRLH5036PbF 1000 1000 100 BOTTOM VGS 15V 10V 4.5V 4.0V 3.3V 3.1V 2.9V 2.7V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 4.5V 4.0V 3.3V 3.1V 2.9V 2.7V 10 2.7V 1 100 BOTTOM 2.7V 10 ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 25°C 0.1 Tj = 150°C 1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 100 Fig 2. Typical Output Characteristics 1000 100 T J = 150°C 10 T J = 25°C 1 VDS = 25V ≤60μs PULSE WIDTH ID = 50A VGS = 10V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.1 1.5 2.5 3.5 4.5 5.5 -60 -40 -20 0 Fig 4. Normalized On-Resistance Vs. Temperature Fig 3. Typical Transfer Characteristics 100000 14 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 50A C oss = C ds + C gd 10000 Ciss 1000 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Coss Crss 12 VDS= 48V VDS= 30V VDS= 12V 10 8 6 4 2 0 100 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage 3 1 www.irf.com © 2015 International Rectifier 0 20 40 60 80 100 120 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage Submit Datasheet Feedback May 20, 2015 IRLH5036PbF 10000 T J = 150°C 100 OPERATION IN THIS AREA LIMITED BY RDS(on) ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 25°C 10 1000 100μsec 100 10msec 10 Limited by Package 1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V DC 0.1 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.6 1 10 100 VDS , Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 3.0 150 VGS(th) , Gate threshold Voltage (V) Limited By Package 125 ID, Drain Current (A) 1msec 100 75 50 25 2.5 2.0 1.5 ID = 1.0A ID = 1.0mA ID = 150μA 1.0 0.5 0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) TC , Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case (Bottom) Temperature Fig 10. Threshold Voltage Vs. Temperature 1 Thermal Response ( ZthJC ) °C/W D = 0.50 0.20 0.1 0.10 0.01 0.01 0.05 0.02 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 20, 2015 12 1200 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRLH5036PbF ID = 50A ID TOP 15A 18A BOTTOM 50A 1000 10 8 T J = 125°C 6 4 T J = 25°C 2 800 600 400 200 0 2 4 6 8 10 12 14 16 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 125°C and Tstart =25°C (Single Pulse) 100 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 125°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 20, 2015 IRLH5036PbF D.U.T Driver Gate Drive - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A I AS 0.01Ω tp Fig 16b. Unclamped Inductive Waveforms Fig 16a. Unclamped Inductive Test Circuit V GS VDS RD VDS 90% D.U.T. RG + -V DD 10% VGS V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 td(on) tr td(off) tf Fig 17b. Switching Time Waveforms Fig 17a. Switching Time Test Circuit Id Vds Vgs L DUT 0 1K VCC Vgs(th) S Qgs1 Qgs2 Fig 18a. Gate Charge Test Circuit 6 www.irf.com © 2015 International Rectifier Qgd Qgodr Fig 18b. Gate Charge Waveform Submit Datasheet Feedback May 20, 2015 IRLH5036PbF PQFN 5x6 Outline "B" Package Details PQFN 5x6 Outline "G" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 20, 2015 IRLH5036PbF PQFN 5x6 Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE XXXX XYWWX XXXXX ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) PQFN 5x6 Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko W P1 DES CRIPTION Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between s uccessive cavity centers QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: All dimension are nominal Package T ype Reel Diameter (Inch) QT Y Reel Width W1 (mm) Ao (mm) Bo (mm) Ko (mm) P1 (mm) W (mm) Pin 1 Quadrant 5 X 6 PQFN 13 4000 12.4 6.300 5.300 1.20 8.00 12 Q1 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 20, 2015 IRLH5036PbF Qualification information† Indus trial Qualification level (per JE DE C JE S D47F Moisture Sensitivity Level RoHS compliant PQFN 5mm x 6mm †† ††† guidelines ) MS L1 ††† (per JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.229mH, RG = 50Ω, IAS = 50A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability Revision History Date 12/16/2013 4/28/2015 5/20/2015 Comments • Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259) • Updated data sheet with new IR corporate template • Updated package outline for “option B” and added package outline for “option G” on page 7 • Updated tape and reel on page 8. • Updated package outline for “option G” on page 7. • Updated "IFX logo" on page 1 and page 9. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 20, 2015