July 1998 FSB619 C E B TM SuperSOT -3 (SOT-23) NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter FSB619 Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous 2 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Max Characteristic Symbol Units FSB619 PD Total Device Dissipation* Derate above 25°C 500 4 mW mW/°C RθJA Thermal Resistance, Junction to Ambient 250 °C/W 1998 Fairchild Semiconductor Corporation Page 1 of 2 FSB619 Discrete Power & Signal Technologies FSB619 *Device mounted on FR-4 PCB 4.5” X 5”; mounting pad 0.02 in2 of 2oz copper. NPN Low Saturation Transistor (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA 50 V BVCBO Collector-Base Breakdown Voltage IC = 100 µA 50 V BVEBO Emitter-Base Breakdown Voltage IE = 100 µA 5 V ICBO Collector Cutoff Current VCB = 40 V 100 nA IEBO Emitter Cutoff Current VEB = 4V 100 nA ICES Collector Emitter Cutoff Current VCES = 40 V 100 nA ON CHARACTERISTICS* hFE VCE(sat) DC Current Gain Collector-Emitter Saturation Voltage IC = 10 mA, VCE = 2V 200 IC = 200 mA, VCE = 2V 300 IC = 1A, VCE = 2V 200 IC = 2A, VCE = 2V 100 - IC = 100 mA, IB = 10 mA 20 IC = 1 A, IB = 10 mA 235 IC = 2 A, IB = 50 mA 320 mV VBE(sat) Base-Emitter Saturation Voltage IC = 2 A, IB = 50 mA 1 V VBE(on) Base-Emitter On Voltage IC = 2 A, VCE = 2 V 1 V 30 pF SMALL SIGNAL CHARACTERISTICS Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1MHz fT Transition Frequency IC = 50 mA,VCE = 10 V, f=100MHz 100 - *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Page 2 of 2 fsb619.lwpPrNA 7/10/98 revC